APTGF300DA120G

APTGF300DA120G Datasheet

APTGF300DA120G

Part	Datasheet
APTGF300DA120G	APTGF300DA120G (pdf)

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APTGF300DA120G Boost chopper NPT IGBT Power Module VCES = 1200V IC = 300A Tc = 80°C VBUS CR1 OUT Q2 G2 E2 0/VBUS Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current Tc = 25°C Tc = 80°C ICM Pulsed Collector Current Tc = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation Tc = 25°C 1780 Tj = 150°C 600A 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF300DA120G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE sat VGE th IGES Collector Emitter saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions Min Typ Max Unit VGE = 0V VCE = 1200V Tj = 25°C Tj = 125°C 500 µA 750

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APTGF300DA120G

Boost chopper NPT IGBT Power Module

VCES = 1200V IC = 300A Tc = 80°C

VBUS CR1

OUT Q2 G2 E2
0/VBUS

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance - Symmetrical design - M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C
1780

Tj = 150°C 600A 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF300DA120G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

ICES Zero Gate Voltage Collector Current

VCE sat

VGE th IGES

Collector Emitter saturation Voltage

Gate Threshold Voltage Gate Emitter Leakage Current

Test Conditions

Min Typ Max Unit

VGE = 0V VCE = 1200V

Tj = 25°C Tj = 125°C
500 µA 750

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Datasheet ID: APTGF300DA120G 648766