APTGF150A120T3WG

APTGF150A120T3WG Datasheet

APTGF150A120T3WG

Part	Datasheet
APTGF150A120T3WG	APTGF150A120T3WG (pdf)

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Phase leg NPT IGBT Power Module APTGF150A120T3WG VCES = 1200V IC = 150A Tc = 80°C 25 26 27 28 18 19 20 22 28 27 26 25 29 30 23 22 20 19 18 16 15 32 234 13 10 11 12 Application • Welding converters Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant Pins 25/26/27/28 must be shorted together Pins 13/14/15/16 must be shorted together Pins 18/19/20/22 must be shorted together Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage ICM VGE PD RBSOA Continuous Collector Current Max ratings Unit 1200 TC = 25°C TC = 80°C TC = 25°C ±20 TC = 25°C TJ = 150°C 300A 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF150A120T3WG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter Saturation Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current Test Conditions Min Typ Max Unit VGE = 0V, VCE = 1200V 250 µA VGE =15V IC = 150A Tj = 25°C Tj = 125°C

PDF Datasheet Preview

Phase leg NPT IGBT Power Module

APTGF150A120T3WG

VCES = 1200V IC = 150A Tc = 80°C
25 26 27 28
18 19 20 22
28 27 26 25 29 30
23 22
20 19 18 16 15
32 234
13 10 11 12

Application
• Welding converters

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS compliant

Pins 25/26/27/28 must be shorted together Pins 13/14/15/16 must be shorted together Pins 18/19/20/22 must be shorted together

Absolute maximum ratings

Parameter

VCES Collector - Emitter Breakdown Voltage

ICM VGE PD RBSOA

Continuous Collector Current

Max ratings

Unit
1200

TC = 25°C

TC = 80°C

TC = 25°C
±20

TC = 25°C

TJ = 150°C 300A 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF150A120T3WG

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic ICES Zero Gate Voltage Collector Current

VCE sat Collector Emitter Saturation Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

Test Conditions

Min Typ Max Unit

VGE = 0V, VCE = 1200V
250 µA

VGE =15V IC = 150A

Tj = 25°C Tj = 125°C

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Datasheet ID: APTGF150A120T3WG 648736