APTCV60TLM45T3G
APTCV60TLM45T3G Datasheet
APTCV60TLM45T3G
| Part | Datasheet |
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APTCV60TLM45T3G |
APTCV60TLM45T3G (pdf) |
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| APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module 28 27 26 25 29 30 23 22 20 19 18 16 15 32 234 13 10 11 12 All multiple inputs and outputs must be shorted together Example 10/11/12 7/8 Trench & Field Stop IGBT3 Q2, Q3 VCES = 600V IC = 75A Tc = 80°C CoolMOS Q1, Q4 VDSS = 600V ID = 38A Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Q2, Q3 Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Q1, Q4 CoolMOS - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All ratings Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on 1 - 12 APTCV60TLM45T3G Q1 & Q4 Absolute maximum ratings per CoolMOS Parameter VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current IDM VGS RDSon EAR EAS Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current repetitive and non repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C Max ratings Unit ±20 3 1900 Q1 & Q4 Electrical Characteristics per CoolMOS Symbol Characteristic Test Conditions Min Typ Max Unit IDSS RDS on VGS th IGSS Zero Gate Voltage Drain Current |
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