APTC80H29T1G
APTC80H29T1G Datasheet
APTC80H29T1G
| Part | Datasheet |
|---|---|
APTC80H29T1G |
APTC80H29T1G (pdf) |
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| APTC80H29T1G Full - Bridge Super Junction MOSFET Power Module VDSS = 800V RDSon = max Tj = 25°C ID = 15A Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Pins 3/4 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTC80H29T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on Drain Source on Resistance VGS = 0V,VDS = 800V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 7.5A 25 µA 250 290 VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V 3 V ±100 nA Dynamic Characteristics Qg Total gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Td on Tr Td off Tf |
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