APT5SM170B

APT5SM170B Datasheet

APT5SM170B

Part	Datasheet
APT5SM170B	APT5SM170B (pdf)

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APT5SM170B PRELIMINARY 1700V, 5A, Silicon Carbide N-Channel Power MOSFET Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Package APT5SM170B TO-247 FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance ESR • Stable operation at high junction temperature, Tj max = +175C • Fast and reliable body diode SiC MOSFET Benefits: • High efficiency to enable lighter/compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need of external Free Wheeling Diode • Lower system cost of ownership Applications • PV inverter, converter and industrial motor drives • Smart grid transmission & distribution • Induction heating, and welding • H/EV powertrain and EV charger • Power supply and distribution Symbol VDSS ID IDM VGS MAXIMUM RATINGS Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor Ratings 1700 5 8 -10 to +25 65 Unit V V W/°C Symbol Tj Tstg TL Torque THERMAL AND MECHANICAL CHARACTERISTICS Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case Mounting Torque TO-247 Package , 6-32 or M3 screw Unit °C/W in•lbf N•m APT5SM170B STATIC CHARACTERISTICS V BR DSS RDS on VGS th Parameter Drain-Source Breakdown Voltage Drain-Source On Resistance 2 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient

PDF Datasheet Preview

APT5SM170B

PRELIMINARY 1700V, 5A,

Silicon Carbide N-Channel Power MOSFET

Silicon carbide SiC power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

Package APT5SM170B

TO-247

FEATURES / TYPICAL APPLICATIONS

SiC MOSFET Features:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance ESR
• Stable operation at high junction temperature, Tj max = +175C
• Fast and reliable body diode

SiC MOSFET Benefits:
• High efficiency to enable lighter/compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external Free Wheeling Diode
• Lower system cost of ownership

Applications
• PV inverter, converter and industrial motor
drives
• Smart grid transmission & distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution

Symbol VDSS

ID IDM VGS

MAXIMUM RATINGS

Parameter Drain Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation TC = 25°C Linear Derating Factor

Ratings 1700 5 8
-10 to +25 65

Unit V

V W/°C

Symbol Tj Tstg TL

Torque

THERMAL AND MECHANICAL CHARACTERISTICS

Characteristic Junction to Case Thermal Resistance Operating Junction Temperature Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case

Mounting Torque TO-247 Package , 6-32 or M3 screw

Unit
°C/W
in•lbf

N•m

APT5SM170B

STATIC CHARACTERISTICS

V BR DSS RDS on VGS th

Parameter Drain-Source Breakdown Voltage Drain-Source On Resistance 2 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient

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Datasheet ID: APT5SM170B 648686