APT5012JN
APT5012JN Datasheet
APT5010JN 500V 48.0A APT5012JN 500V 43.0A
| Part | Datasheet |
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APT5012JN |
APT5012JN (pdf) |
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| SOT-227 S APT5010JN 500V 48.0A APT5012JN 500V 43.0A POWER MOS "UL Recognized" File No. E145592 S SINGLE DIE PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT 5010JN APT 5012JN UNIT VDSS Drain-Source Voltage Volts ID IDM, lLM Continuous Drain Current TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage ±30 Amps Volts Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 µA APT5010JN APT5012JN ID ON On State Drain Current 2 VDS > ID ON x RDS ON Max, VGS = 10V APT5010JN APT5012JN Drain-Source On-State Resistance 2 RDS ON VGS = 10V, ID [Cont.] APT5010JN APT5012JN IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V VGS TH Gate Threshold Voltage VDS = VGS, ID = 2.5mA THERMAL CHARACTERISTICS |
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