APT31N60BCSG

APT31N60BCSG Datasheet

600V 31A APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG*

Part	Datasheet
APT31N60BCSG	APT31N60BCSG (pdf)

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600V 31A APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 Package TO-247 D3PAK S MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation TC = 25°C Linear Derating Factor TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. MOSFET dv/dt Ruggedness VDS = 480V Avalanche Current 2 Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy 3 All Ratings TC = 25°C unless otherwise APT31N60B_SCS G UNIT Volts Amps ±30 Volts Watts W/°C -55 to 150 °C V/ns Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V BR DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID = 18A IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V, TC = 150°C IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V 10 ±100 VGS th Gate Threshold Voltage VDS = VGS, ID = 1.2mA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - "COOLMOS comprise a new family of transistors developed by Technologies AG. "COOLMOS" is a trademark of Technologies AG."

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600V 31A APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.

COOLMOS Power Semiconductors

Super Junction MOSFET
• Ultra Low RDS ON
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
• Popular TO-247 or Surface Mount D3 Package

TO-247

D3PAK S

MAXIMUM RATINGS

Symbol Parameter

VDSS ID

IDM VGS PD

Drain-Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1

Gate-Source Voltage Continuous Total Power Dissipation TC = 25°C Linear Derating Factor

TJ,TSTG TL
dv/dt IAR EAR EAS

Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec.

MOSFET dv/dt Ruggedness VDS = 480V Avalanche Current 2 Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy 3

All Ratings TC = 25°C unless otherwise

APT31N60B_SCS G UNIT

Volts

Amps
±30

Volts

Watts

W/°C
-55 to 150 °C

V/ns

Amps

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

MIN TYP MAX UNIT

V BR DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID = 18A

IDSS

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V, TC = 150°C

IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V
10 ±100

VGS th Gate Threshold Voltage VDS = VGS, ID = 1.2mA

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website -
"COOLMOS comprise a new family of transistors developed by Technologies AG. "COOLMOS" is a trademark of Technologies AG."

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APT31N60BCSG Datasheet file may be downloaded here without warranties.

Datasheet ID: APT31N60BCSG 648656