APT30GS60KRG

APT30GS60KRG Datasheet

APT30GS60KR G

Part	Datasheet
APT30GS60KRG	APT30GS60KRG (pdf)

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APT30GS60KR G 600V, 30A, VCE ON = 2.8V Typical High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through NPT technology similar to the series, but trades higher VCE ON for lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE ON temperature make it easy to parallel Thunderbolts HS IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. APT30GS60KR G • Fast Switching with low EMI • ZVS Phase Shifted and other Full Bridge • Very Low EOFF for Maximum • Short circuit rated • Low Gate Charge • Tight parameter distribution • Easy paralleling • RoHS Compliant • Half Bridge • High Power PFC Boost • Welding • Induction heating • High Frequency SMPS Absolute Maximum Ratings Symbol Parameter Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C ICM Pulsed Collector Current 1 VGE Gate-Emitter Voltage SSOA Switching Safe Operating Area EAS Single Pulse Avalanche Energy 2 Short Circut Withstand Time 3 Rating Unit ±30V Thermal and Mechanical Characteristics Symbol Parameter Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat Greased Surface TJ, TSTG Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case WT Package Weight Torque Mounting Torque, 6-32 M3 Screw Typ Max Unit °C/W 10 in•lbf N•m CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - Static Characteristics TJ = 25°C unless otherwise Symbol Parameter Test Conditions VBR CES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250µA

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APT30GS60KR G
600V, 30A, VCE ON = 2.8V Typical

High Speed NPT IGBT

The Thunderbolt HS series is based on thin wafer non-punch through NPT technology similar to the series, but trades higher VCE ON for lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost.

An extremely tight parameter distribution combined with a positive VCE ON temperature make it easy to parallel Thunderbolts HS IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness.

APT30GS60KR G
• Fast Switching with low EMI
• ZVS Phase Shifted and other Full Bridge
• Very Low EOFF for Maximum
• Short circuit rated
• Low Gate Charge
• Tight parameter distribution
• Easy paralleling
• RoHS Compliant
• Half Bridge
• High Power PFC Boost
• Welding
• Induction heating
• High Frequency SMPS

Absolute Maximum Ratings

Symbol Parameter

Continuous Collector Current TC = 25°C

Continuous Collector Current TC = 100°C

ICM Pulsed Collector Current 1

VGE Gate-Emitter Voltage

SSOA Switching Safe Operating Area

EAS Single Pulse Avalanche Energy 2

Short Circut Withstand Time 3

Rating

Unit
±30V

Thermal and Mechanical Characteristics

Symbol Parameter

Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat Greased Surface

TJ, TSTG Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds 1.6mm from case

WT Package Weight

Torque Mounting Torque, 6-32 M3 Screw

Typ Max Unit
°C/W
10 in•lbf

N•m

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website -

Static Characteristics

TJ = 25°C unless otherwise

Symbol Parameter

Test Conditions

VBR CES Collector-Emitter Breakdown Voltage

VGE = 0V, IC = 250µA

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Datasheet ID: APT30GS60KRG 648653