APT20SCD120B
APT20SCD120B Datasheet
APT20SCD120B APT20SCD120S
| Part | Datasheet |
|---|---|
APT20SCD120B |
APT20SCD120B (pdf) |
| Related Parts | Information |
|---|---|
APT20SCD120S |
APT20SCD120S |
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| APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC PRODUCT FEATURES • Zero Recovery Times trr • Popular TO-247 Package or surface mount D3PAK package • Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Higher Reliability Systems • Minimizes or eliminates snubber T O -247 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol Characteristic / Test Conditions TC = 25°C unless otherwise Ratings Unit VR VRRM VRWM IF IFRM IFSM Ptot TJ, TSTG TL Maximum D.C. Forward current TC = 25°C TC = 135°C Repetitive Peak Forward Suge Current TJ = 45°C, tp = 10ms, Half Sine Wave Non-Repetitive Forward Surge Current TJ = 25°C, tp = 10ms, Half Sine Power Dissipation TC = 25°C TC = 110°C Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 1200 68 20 100 220 208 66 -55 to 150 300 Volts Amps W °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Forward Voltage IF = 20A TJ = 25°C IF = 20A, TJ = 150°C VR = 1200V TJ = 25°C VR = 1200V, TJ = 150°C Total Capactive Charge VR = 800V, IF = 20A, di/dt = -100A/us, TJ = 25°C Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz Junction Capacitance VR = 200V, TJ = 25°C, f = 1MHz |
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