APT20GF120BRG

APT20GF120BRG Datasheet

APT20GF120BR

Part	Datasheet
APT20GF120BRG	APT20GF120BRG (pdf)

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APT20GF120BR APT20GF120BR 1200V 32A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-247 • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated • RBSOA and SCSOA Rated MAXIMUM RATINGS Symbol Parameter E All Ratings TC = 25°C unless otherwise specified. APT20GF120BR UNIT VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Collector-Emitter Voltage Collector-Gate Voltage RGE = 20KW Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 90°C Pulsed Collector Current 1 TC = 25°C RBSOA Clamped Inductive Load Current Rg = 11W TC = 125°C Single Pulse Avalanche Energy 2 Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec. 1200 ±20 32 20 64 40 22 200 -55 to 150 300 Volts Amps mJ Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVCES VGE TH VCE ON I CES I GES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 0.8mA Gate Threshold Voltage VCE = VGE, I C = 350µA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 125°C Collector Cut-off Current VCE = VCES, VGE = 0V, Tj = 25°C Collector Cut-off Current VCE = VCES, VGE = 0V, Tj = 125°C Gate-Emitter Leakage Current VGE = ±20V, VCE = 0V 1200 ±100 CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. UNIT Volts mA nA APT Website - USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone 541 382-8028 Phone 33 5 57 92 15 FAX 541 388-0364 FAX 33 5 56 47 97 61

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APT20GF120BR

APT20GF120BR
1200V 32A

Fast IGBT

The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.

TO-247
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated

MAXIMUM RATINGS Symbol Parameter

E All Ratings TC = 25°C unless otherwise specified.

APT20GF120BR

UNIT

VCES VCGR VGE

I C1 I C2 I CM I LM EAS PD TJ,TSTG TL

Collector-Emitter Voltage Collector-Gate Voltage RGE = 20KW Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 90°C Pulsed Collector Current 1 TC = 25°C RBSOA Clamped Inductive Load Current Rg = 11W TC = 125°C Single Pulse Avalanche Energy 2 Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec.
1200 ±20
32 20 64 40 22 200 -55 to 150 300

Volts

Amps mJ

Watts °C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVCES VGE TH VCE ON

I CES I GES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 0.8mA Gate Threshold Voltage VCE = VGE, I C = 350µA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 125°C Collector Cut-off Current VCE = VCES, VGE = 0V, Tj = 25°C Collector Cut-off Current VCE = VCES, VGE = 0V, Tj = 125°C Gate-Emitter Leakage Current VGE = ±20V, VCE = 0V
1200
±100

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

UNIT Volts
mA nA

APT Website -

USA EUROPE
405 S.W. Columbia Street Chemin de Magret

Bend, Oregon 97702 -1035 F-33700 Merignac - France

Phone 541 382-8028 Phone 33 5 57 92 15

FAX 541 388-0364 FAX 33 5 56 47 97 61

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Datasheet ID: APT20GF120BRG 648637