AP9T0105VGP90K G APT15GP90K APT15GP90KG*
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APT15GP90KG (pdf) |
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TYPICAL PERFORMANCE CURVES AP9T0105VGP90K G APT15GP90K APT15GP90KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS IGBT The POWER MOS IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • SSOA Rated TO-220 MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise APT15GP90K G UNIT VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec. 900 ±30 43 21 60 60A 900V 250 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions V BR CES VGE TH VCE ON I CES I GES Collector-Emitter Breakdown Voltage VGE = 0V, I C = 350µA Gate Threshold Voltage VCE = VGE, I C = 1mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 125°C Collector Cut-off Current VCE = 900V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 900V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V MIN TYP MAX Units Volts 250 µA 2500 ±100 nA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS Cies Coes Cres VGEP Qg Qge Qgc SSOA Switching Safe Operating Area td on tr td off tf Eon1 Eon2 Eoff td on tr td off tf Eon1 Eon2 Eoff |
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