APT14050JVFR

APT14050JVFR Datasheet

APT14050JVFR

Part	Datasheet
APT14050JVFR	APT14050JVFR (pdf)

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APT14050JVFR 1400V 23A POWER MOS V FREDFET Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching • Avalanche Energy Rated • Popular SOT-227 Package SOT-227 S "UL Recognized" MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT14050JVFR UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 1400 23 92 ±30 ±40 Volts Amps Volts Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 23 50 3600 °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS on IDSS IGSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 11.5A Zero Gate Voltage Drain Current VDS = 1400V, VGS = 0V Zero Gate Voltage Drain Current VDS = 1120V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V 1400 250 1000 ±100 VGS th Gate Threshold Voltage VDS = VGS, ID = 5mA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. UNIT Volts Ohms nA Volts APT Website -

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APT14050JVFR
1400V 23A

POWER MOS V FREDFET

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Lower Leakage
• Faster Switching
• Avalanche Energy Rated
• Popular SOT-227 Package

SOT-227 S
"UL Recognized"

MAXIMUM RATINGS

All Ratings TC = 25°C unless otherwise specified.

Symbol Parameter

APT14050JVFR

UNIT

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
1400 23 92 ±30 ±40

Volts Amps Volts

Total Power Dissipation TC = 25°C

Linear Derating Factor

Watts

W/°C

TJ,TSTG TL IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 23 50 3600
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS RDS on

IDSS

IGSS

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 11.5A Zero Gate Voltage Drain Current VDS = 1400V, VGS = 0V Zero Gate Voltage Drain Current VDS = 1120V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V
1400
250 1000 ±100

VGS th Gate Threshold Voltage VDS = VGS, ID = 5mA

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

UNIT Volts Ohms
nA Volts

APT Website -

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived APT14050JVFR Datasheet file may be downloaded here without warranties.

Datasheet ID: APT14050JVFR 648622