APT12080JVR

APT12080JVR Datasheet

APT12080JVR

Part	Datasheet
APT12080JVR	APT12080JVR (pdf)

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APT12080JVR 1200V 15A 0.800W SOT-227 S POWER MOS Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested "UL Recognized" Lower Leakage Popular SOT-227 Package MAXIMUM RATINGS S All Ratings TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT12080JVR 1200 15 60 ±30 ±40 450 -55 to 150 300 15 50 2500 UNIT Volts Amps Volts Watts W/°C °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS ID on RDS on IDSS IGSS VGS th Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA On State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V Drain-Source On-State Resistance 2 VGS = 10V, ID[Cont.] Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 2.5mA 1200 15 25 250 ±100 4 Volts Amps Ohms nA Volts CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 405 S.W. Columbia Street EUROPE Chemin de Magret APT Website - Bend, Oregon 97702-1035 Phone 541 382-8028 33700 Merignac - France Phone 33 5 57 92 15 FAX 541 388-0364 FAX 33 5 56 47 97 61 DYNAMIC CHARACTERISTICS

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APT12080JVR
1200V 15A 0.800W

SOT-227 S

POWER MOS

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout.

Faster Switching
100% Avalanche Tested
"UL Recognized"

Lower Leakage

Popular SOT-227 Package

MAXIMUM RATINGS

S All Ratings TC = 25°C unless otherwise specified.

Symbol VDSS ID IDM VGS VGSM

TJ,TSTG TL IAR EAR EAS

Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4

APT12080JVR 1200 15 60 ±30 ±40 450
-55 to 150 300 15 50 2500

UNIT Volts Amps

Volts Watts W/°C
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX UNIT

BVDSS ID on RDS on

IDSS

IGSS VGS th

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA On State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V Drain-Source On-State Resistance 2 VGS = 10V, ID[Cont.] Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V

Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 2.5mA
1200 15
25 250
±100 4

Volts Amps Ohms
nA Volts

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
405 S.W. Columbia Street EUROPE

Chemin de Magret

APT Website - Bend, Oregon 97702-1035 Phone 541 382-8028
33700 Merignac - France

Phone 33 5 57 92 15

FAX 541 388-0364 FAX 33 5 56 47 97 61

DYNAMIC CHARACTERISTICS

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Datasheet ID: APT12080JVR 648617