APT11GF120BRDQ1G

APT11GF120BRDQ1G Datasheet

APT11210G0FV120BRDQ1 G APT11GF120BRDQ1 APT11GF120BRDQ1G*

Part	Datasheet
APT11GF120BRDQ1G	APT11GF120BRDQ1G (pdf)

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TYPICAL PERFORMANCE CURVES APT11210G0FV120BRDQ1 G APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • RBSOA and SCSOA Rated • Ultra Low Leakage Current • Ultrafast Soft Recovery Anti-parallel Diode TO-247 MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise APT11GF120BRDQ1 G UNIT VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec. 1200 ±30 25 14 24 24A 1200V 156 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions V BR CES VGE TH VCE ON I CES I GES Collector-Emitter Breakdown Voltage VGE = 0V, I C = 500µA Gate Threshold Voltage VCE = VGE, I C = 350µA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 8A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 8A, Tj = 125°C Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V MIN TYP MAX Units 1200 Volts 500 µA 3000 ±100 nA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS Cies Coes Cres VGEP Qg Qge Qgc SSOA Switching Safe Operating Area td on tr td off tf Eon1 Eon2 Eoff td on tr td off tf Eon1 Eon2 Eoff Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 55 Turn-off Switching Energy 6 APT11GF120BRDQ1 G

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TYPICAL PERFORMANCE CURVES

APT11210G0FV120BRDQ1 G APT11GF120BRDQ1 APT11GF120BRDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.

FAST IGBT & FRED

The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
• Ultrafast Soft Recovery Anti-parallel Diode

TO-247

MAXIMUM RATINGS Symbol Parameter

All Ratings TC = 25°C unless otherwise APT11GF120BRDQ1 G UNIT

VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL

Collector-Emitter Voltage Gate-Emitter Voltage

Continuous Collector Current TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current 1

Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering from Case for 10 Sec.
1200 ±30 25 14 24 24A 1200V 156 -55 to 150 300

Volts Amps

Watts °C

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

V BR CES VGE TH VCE ON

I CES I GES

Collector-Emitter Breakdown Voltage VGE = 0V, I C = 500µA Gate Threshold Voltage VCE = VGE, I C = 350µA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 8A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 8A, Tj = 125°C Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 1200V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V

MIN TYP MAX Units
1200

Volts
500 µA 3000 ±100 nA

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website -

DYNAMIC CHARACTERISTICS

Cies Coes Cres VGEP Qg Qge Qgc

SSOA Switching Safe Operating Area
td on
tr td off
tf Eon1 Eon2 Eoff td on
tr td off
tf Eon1 Eon2 Eoff

Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time

Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy Diode 55 Turn-off Switching Energy 6

APT11GF120BRDQ1 G

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Datasheet ID: APT11GF120BRDQ1G 648614