APT10SCE170B
APT10SCE170B Datasheet
APT10SCE170B 1700V 10A
| Part | Datasheet |
|---|---|
APT10SCE170B |
APT10SCE170B (pdf) |
| PDF Datasheet Preview |
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| APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC PRODUCT FEATURES • Zero Recovery Times trr • Popular TO-247 Package • Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Higher Reliability Systems • Minimizes or eliminates snubber T O -247 D3PAK MAXIMUM RATINGS Symbol Characteristic / Test Conditions VR VRRM VRWM Maximum D.C. Forward Current IFSM Non-Repetitive Forward Surge Current tp = 10ms, Half Sine Ptot Power Dissipation TJ, TSTG TL Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 1 - Cathode 2 - Anode Back of Case - Cathode All Ratings TC = 25°C unless otherwise specified. Ratings Unit TC = 25°C TC = 110°C TC = 25°C TC = 110°C TC = 25°C TC = 110°C 1700 23 15 55 50 214 92 -55 to 175 300 Volts Amps W °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Forward Voltage IF = 10A TJ = 25°C IF = 10A, TJ = 175°C VR = 1700V TJ = 25°C VR = 1700V, TJ = 175°C Total Capactive Charge VR = 800V, IF = 10A, di/dt = -500A/µs, TJ = 25°C Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz Junction Capacitance VR = 300V, TJ = 25°C, f = 1MHz |
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