APT10SCD120BCT
APT10SCD120BCT Datasheet
APT10SCD120BCT 1200V 10A
| Part | Datasheet |
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APT10SCD120BCT |
APT10SCD120BCT (pdf) |
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| APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC PRODUCT FEATURES • Zero Recovery Times trr • Popular TO-247 Package • Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Higher Reliability Systems • Minimizes or eliminates snubber BCT TO-247 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 MAXIMUM RATINGS Symbol Characteristic / Test Conditions All Ratings per Leg TC = 25°C unless otherwise Ratings Unit VR VRRM VRWM IF IFRM IFSM Ptot TJ, TSTG TL Maximum D.C. Forward Current TC = 25°C TC = 135°C Repetitive Peak Forward Suge Current TJ = 45°C, tp = 10ms, Half Sine Wave Non-Repetitive Forward Surge Current TJ = 25°C, tp = 10ms, Half Sine Power Dissipation TC = 25°C TC = 110°C Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 1200 36 10 50 110 125 45 -55 to 150 300 Volts Amps W °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Forward Voltage IF = 10A TJ = 25°C IF = 10A, TJ = 150°C VR = 1200V TJ = 25°C VR = 1200V, TJ = 150°C Total Capactive Charge VR = 800V, IF = 10A, di/dt = -100A/us, TJ = 25°C Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz Junction Capacitance VR = 200V, TJ = 25°C, f = 1MHz Junction Capacitance VR = 400V, TJ = 25°C, f = 1MHz |
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