2N4029
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2N4033 (pdf) |
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PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 Devices 2N4029 2N4033 TECHNICAL DATA Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation TA = +250C Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1 Derate linearly mW/0C for TA > +250C 2 Derate linearly mW/0C for TA > +250C Symbol VCEO VCBO VEBO IC PT TJ, Tstg VALUE 80 2N40291 2N40332 -55 to +200 Max. ELECTRICAL CHARACTERISTICS TA = 250C unless otherwise noted Characteristics OFF CHARACTERISTICS Collector-Base Cutoff Current VCB = 80 Vdc ICBO VCB = 60 Vdc Emitter-Base Cutoff Current VBE = Vdc IEBO VBE = Vdc Collector-Emitter Cutoff Voltage VBE = 40 Vdc VCE = 60 Vdc ICEX Unit Vdc Adc TO-18* TO-206AA 2N4029 Unit 0C/W TO-39* TO-205AD 2N4033 *See appendix A for package outline Min. Max. Unit µAdc ηAdc |
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