JANSR2N2369AUB
JANSR2N2369AUB Datasheet
This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects
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JANSR2N2369AUB |
JANSR2N2369AUB (pdf) |
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| MSR2N2369AUB / UBC Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Screened Levels MSR Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2369AUB 100 Krad 100 Krad This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects Important For the latest information, visit our website • JEDEC registered 2N2369 • TID level screened per MIL-PRF-19500 • Also available with ELDRS testing to Rad s / sec • MKCR / MHCR chip die available • RHA Radiation hardness assured lot by lot validation testing via ELDR Rad SI /sec dose rate APPLICATIONS / BENEFITS • Rad-Hard power supplies • Rad-Hard motor controls • General purpose switching • Instrumentation Amps • EPS Satellite switching power applications MAXIMUM RATINGS TA = +25 ºC unless otherwise noted UB & UBC Package Also available in: AU package surface mount MSR2N2369AU TO-206AA package leaded top-hat MSR2N2369A UA package surface mount MSR2N2369AUA Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Solder Pad Thermal Resistance Junction-to-Ambient Total Power Dissipation: TA = +25 ºC 1 TC = +125 ºC 2 3 TSP = +125 ºC 2 Collector-Base Voltage, Emitter Open Emitter-Base Voltage, Collector Open Collector-Emitter Voltage, Base Open Collector Current, dc Solder Temperature 10 s Symbol TJ and TSTG VCBO VEBO VCEO VCES TSP Value -65 to +200 210 486 40 15 40 260 Notes Derate linearly mW/°C above TA = +25°C. Derate linerly mW/°C above TC =+125°C. See Figure Power dissipation limited to 360 mW per chip regardless of thermal resistance. Unit ºC ºC/W ºC/W MSC Lawrence 6 Lake Street, Lawrence, MA 01841 Tel 1-800-446-1158 or 978 620-2600 Fax 978 689-0803 MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel +353 0 65 6840044 Fax +353 0 65 6822298 Website: |
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