23A017
23A017 Datasheet
23A017
| Part | Datasheet |
|---|---|
23A017 |
23A017 (pdf) |
| PDF Datasheet Preview |
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| 23A017 Watts, 20 Volts, Class A Linear to 2300 MHz The 23A017 is a COMMON EMITTER transistor capable of providing Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 25oC Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Collector Current 50 Volts 800 mA Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200oC + 200oC CASE OUTLINE 55BT, STYLE 2 ELECTRICAL CHARACTERISTICS 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg Ft VSWR Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance F = GHz Ic = 280 mA Vcc = 20 Volts Vce = 20V, Ic =280 mA Watts dB GHz 9:1 BVebo Emitter to Base Breakdown Ie = 2 mA Volts BVces Collector to Emitter Breakdown Ic = 20 mA Volts BVceo Collector to Emitter Breakdown Ic = 20 mA Volts DC Current Gain Capacitance Vce = 5 V, Ic = 200 mA 20 Vcb = 28V, f = 1 MHz Thermal Resistance |
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