1N8165US

1N8165US Datasheet

1N8149US 1N8182US

Part	Datasheet
1N8165US	1N8165US (pdf)

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1N8149US 1N8182US Available Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor TVS designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak “standoff” voltage selection from to 170 volts with 150 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in axial leaded packages for thru-hole mounting. “A” SQ-MELF Package Important For the latest information, visit our website • High surge current and peak pulse power unidirectional protection for sensitive circuits. • Very low capacitance for high frequency or high baud rate applications. • Bidirectional capability with two devices in anti-parallel see Figure • Triple-layer passivation. • Internal “Category 1” metallurgical bonds. • Voidless hermetically sealed glass package. • RoHS compliant versions are available. Also available in: “A” Package axial-leaded 1N8149 1N8182 APPLICATIONS / BENEFITS • High reliability transient protection. • Extremely robust construction. • Working peak “standoff” voltage VWM from to 170 volts. • Available as 150 W peak pulse power PPP at 10/1000 µs. • Lowest available capacitance for 150 W rated TVS. • ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively. • Secondary lightning protection per select levels in IEC61000-4-5. • Square-end-cap terminals for easy placement. • Nonsensitive to ESD per MIL-STD-750 method • Inherently radiation hard as described in Microsemi MicroNote MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Capacitance at zero volts Thermal Resistance junction to ambient Peak Pulse Power at 25 oC 10µs/1000µs Impulse repetition rate duty factor Steady State Average Power TA = 25 oC Solder Temperature 10 s maximum Symbol TJ and TSTG C PPP d.f PM AV Value -55 to +175 4 150 260 Unit oC pF oC/W Note Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ MAX is not exceeded. MSC Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 978 620-2600 Fax 978 689-0803 MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel +353 0 65 6840044 Fax +353 0 65 6822298 Website: 2013 Microsemi Corporation Page 1 of 6 1N8149US 1N8182US MECHANICAL and PACKAGING • CASE Hermetically sealed voidless hard glass with tungsten slugs. • TERMINALS End caps feature tin/lead or RoHS compliant matte/tin plating over copper. • MARKING None • POLARITY Cathode band • MOUNTING Any position • TAPE & REEL option Standard per EIA-481-B. Consult factory for quantities. • WEIGHT Approximately 539 milligrams. • See Package Dimensions on last page. Reliability Level MQ reference JAN MX reference JANTX MV reference JANTXV MS reference JANS Blank = Commercial Type number see Electrical Characteristics table PART NOMENCLATURE MQ 1N8149 US e3 RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant MELF Surface Mount Symbol V BR VWM ID I BR PPP CT VWIB IIB SYMBOLS & DEFINITIONS Definition Temperature Coefficient of Breakdown Voltage The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Breakdown Voltage The voltage across the device at a specified current I BR in the breakdown region. Working Standoff Voltage The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current The current through the device at rated stand-off voltage. Breakdown Current The current used for measuring Breakdown Voltage V BR Peak Impulse Current The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage The voltage across the device in a region of low differential resistance during the application of an impulse current IPP for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of IPP and VC. Total Capacitance The total small signal capacitance between the diode terminals of a complete device.

PDF Datasheet Preview

1N8149US 1N8182US

Available

Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors

This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor TVS designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak “standoff” voltage selection from to 170 volts with 150 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in axial leaded packages for thru-hole mounting.
“A” SQ-MELF Package

Important For the latest information, visit our website
• High surge current and peak pulse power unidirectional protection for sensitive circuits.
• Very low capacitance for high frequency or high baud rate applications.
• Bidirectional capability with two devices in anti-parallel see Figure
• Triple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Voidless hermetically sealed glass package.
• RoHS compliant versions are available.

Also available in:
“A” Package
axial-leaded 1N8149 1N8182

APPLICATIONS / BENEFITS
• High reliability transient protection.
• Extremely robust construction.
• Working peak “standoff” voltage VWM from to 170 volts.
• Available as 150 W peak pulse power PPP at 10/1000 µs.
• Lowest available capacitance for 150 W rated TVS.
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
• Secondary lightning protection per select levels in IEC61000-4-5.
• Square-end-cap terminals for easy placement.
• Nonsensitive to ESD per MIL-STD-750 method
• Inherently radiation hard as described in Microsemi MicroNote

MAXIMUM RATINGS

Parameters/Test Conditions

Junction and Storage Temperature Capacitance at zero volts Thermal Resistance junction to ambient Peak Pulse Power at 25 oC 10µs/1000µs Impulse repetition rate duty factor Steady State Average Power TA = 25 oC Solder Temperature 10 s maximum

Symbol TJ and TSTG

C PPP d.f PM AV

Value -55 to +175
4 150 260

Unit oC
pF oC/W

Note Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ MAX is not exceeded.

MSC Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 978 620-2600 Fax 978 689-0803

MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel +353 0 65 6840044 Fax +353 0 65 6822298

Website:
2013 Microsemi Corporation

Page 1 of 6
1N8149US 1N8182US

MECHANICAL and PACKAGING
• CASE Hermetically sealed voidless hard glass with tungsten slugs.
• TERMINALS End caps feature tin/lead or RoHS compliant matte/tin plating over copper.
• MARKING None
• POLARITY Cathode band
• MOUNTING Any position
• TAPE & REEL option Standard per EIA-481-B. Consult factory for quantities.
• WEIGHT Approximately 539 milligrams.
• See Package Dimensions on last page.

Reliability Level MQ reference JAN MX reference JANTX MV reference JANTXV MS reference JANS Blank = Commercial

Type number see Electrical Characteristics
table

PART NOMENCLATURE

MQ 1N8149 US e3

RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant

MELF Surface Mount

Symbol V BR VWM ID I BR

PPP CT VWIB IIB

SYMBOLS & DEFINITIONS Definition

Temperature Coefficient of Breakdown Voltage The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Breakdown Voltage The voltage across the device at a specified current I BR in the breakdown region. Working Standoff Voltage The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current The current through the device at rated stand-off voltage. Breakdown Current The current used for measuring Breakdown Voltage V BR Peak Impulse Current The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage The voltage across the device in a region of low differential resistance during the application of an impulse current IPP for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of IPP and VC. Total Capacitance The total small signal capacitance between the diode terminals of a complete device.

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Datasheet ID: 1N8165US 648577