JR28F032M29EWXX PZ28F032M29EWXX JS28F064M29EWXX PC28F064M29EWXX JR28F064M29EWXX PZ28F064M29EWXX JS28F128M29EWXX PC28F128M29EWXX RC28F128M29EWXX
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RC28F128M29EWHF (pdf) |
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PZ28F064M29EWBA |
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PC28F064M29EWBA |
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PC28F064M29EWHA |
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PC28F064M29EWLA |
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PC28F064M29EWTA |
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PZ28F064M29EWLA |
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PC28F128M29EWLA |
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PZ28F064M29EWHA |
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PZ28F064M29EWTA |
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JS28F064M29EWTA |
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PC28F128M29EWHF |
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JR28F064M29EWLA |
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JR28F064M29EWBA |
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JS28F128M29EWLA |
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JR28F064M29EWHA |
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JR28F064M29EWTA |
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JS28F064M29EWBA |
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JS28F064M29EWHA |
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JS28F064M29EWLA |
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JS28F128M29EWHF |
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JR28F032M29EWBB TR |
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JR28F032M29EWTB TR |
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JS28F064M29EWLB TR |
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JR28F064M29EWHB TR |
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JR28F064M29EWLB TR |
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JR28F064M29EWTB TR |
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PZ28F032M29EWHA |
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JS28F128M29EWHA |
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PZ28F032M29EWTA |
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PZ28F064M29EWHX |
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PZ28F032M29EWBA |
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PZ28F064M29EWTX |
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PC28F064M29EWHX |
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PC28F064M29EWTY TR |
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JR28F032M29EWLA |
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JR28F032M29EWTA |
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PZ28F064M29EWLX |
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PC28F128M29EWLX |
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PC28F128M29EWHX |
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PC28F128M29EWHG |
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PC28F064M29EWLX |
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PC28F064M29EWBX |
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JR28F032M29EWBA |
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PZ28F064M29EWBB TR |
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JR28F032M29EWHA |
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PZ28F064M29EWBX |
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PZ28F032M29EWBB TR |
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PC28F064M29EWTX |
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PZ28F032M29EWLA |
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RC28F128M29EWLA |
PDF Datasheet Preview |
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32Mb, 64Mb, 128Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX PZ28F032M29EWXX JS28F064M29EWXX PC28F064M29EWXX JR28F064M29EWXX PZ28F064M29EWXX JS28F128M29EWXX PC28F128M29EWXX RC28F128M29EWXX • Supply voltage VCC = program, erase, read VCCQ = I/O buffers • Asynchronous random or page read Page size 8 words or 16 bytes Page access 25ns Random access VCCQ = 60ns BGA 70ns TSOP • Buffer program 256-word MAX program buffer • Program time 0.56µs per byte MB/s TYP when using 256word buffer size in buffer program without VPPH 0.31µs per byte MB/s TYP when using 256word buffer size in buffer program with VPPH • Memory organization 32Mb 64 main blocks, 64KB each, or eight 8KB boot blocks top or bottom and 63 main blocks, 64KB each 64Mb 128 main blocks, 64KB each, or eight 8KB boot blocks top or bottom and 127 main blocks, 64 KB each 128Mb 128 main blocks, 128KB each • Program/erase controller Embedded byte/word program algorithms • Program/erase suspend and resume capability READ operation on another block during a PROGRAM SUSPEND operation READ or PROGRAM operation on one block during an ERASE SUSPEND operation on another block • BLANK CHECK operation to verify an erased block • Unlock bypass, block erase, chip erase, and write to buffer capability Fast buffered/batch programming Fast block and chip erase • VPP/WP# pin protection VPPH voltage on VPP to accelerate programming performance Protects highest/lowest block H/L uniform or top/bottom two blocks T/B boot • Software protection Volatile protection Nonvolatile protection Password protection Password access • Extended memory block 128-word 256-byte block for permanent secure identification Program or lock implemented at the factory or by the customer • Low-power consumption Standby mode • JESD47H-compliant 100,000 minimum ERASE cycles per block Data retention 20 years TYP • 65nm single-bit cell process technology • Packages JEDEC-standard 56-pin TSOP 128Mb, 64Mb 48-pin TSOP 64Mb, 32Mb 64-ball FBGA 128Mb, 64Mb 48-ball BGA 64Mb, 32Mb • Green packages available RoHS-compliant Halogen-free • Operating temperature Ambient to +85°C Micron Technology, Inc. reserves the right to change products or specifications without notice. 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 32Mb, 64Mb, 128Mb 3V Embedded Parallel NOR Flash Features Part Numbering Information This product is available with the prelocked extended memory block. Devices are shipped from the factory with memory content bits erased to For a list of available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Table 1 Part Number Information Part Number Category Package Product designator Density Device type Device function Category Details JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant RC = 64-ball Fortified BGA, 11mm x 13mm, leaded JR = 48-pin TSOP, 12mm x 20mm, lead-free, halogen-free, RoHS-compliant PZ = 48-ball BGA, 6mm x 8mm, lead-free, halogen-free, RoHS-compliant 28F = Parallel NOR interface 128 = 128Mb 064 = 64Mb 032 = 32Mb M29EW = Embedded Flash memory 3V core, page read H = Highest block protected by VPP/WP# uniform block L = Lowest block protected by VPP/WP# uniform block B = Bottom boot bottom two blocks protected by VPP/WP# T = Top boot top two blocks protected by VPP/WP# A/B/F/X or an asterisk * = Combination of features, including packing media, security features, and specific customer request information Valid M29EW Part Number Combinations Table 2 Standard Part Numbers by Density, Medium, and Package Density Medium 32Mb Tray JR28F032M29EWHA PZ28F032M29EWHA JR28F032M29EWLA PZ28F032M29EWLA JR28F032M29EWBA PZ28F032M29EWBA JR28F032M29EWTA PZ28F032M29EWTA Tape JR28F032M29EWBB PZ28F032M29EWBB JR28F032M29EWTB reel |
More datasheets: PC28F064M29EWLX | PC28F064M29EWBX | JR28F032M29EWBA | PZ28F064M29EWBB TR | JR28F032M29EWHA | PZ28F064M29EWBX | PZ28F032M29EWBB TR | PC28F064M29EWTX | PZ28F032M29EWLA | RC28F128M29EWLA |
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