MTA4ATF25664HZ-2G6B1

MTA4ATF25664HZ-2G6B1 Datasheet

MTA4ATF25664HZ 2GB

Part	Datasheet
MTA4ATF25664HZ-2G6B1	MTA4ATF25664HZ-2G6B1 (pdf)

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2GB x64, SR 260-Pin DDR4 SODIMM Features DDR4 SDRAM SODIMM MTA4ATF25664HZ 2GB • DDR4 functionality and operations supported as defined in the component data sheet • 260-pin, small-outline dual in-line memory module SODIMM • Fast data transfer rates PC4-2666, PC4-2400 • 2GB 256 Meg x 64 • VDD = 1.20V NOM • VPP = 2.5V NOM • VDDSPD = 2.5V NOM • Nominal and dynamic on-die termination ODT for data, strobe, and mask signals • Low-power auto self refresh LPASR • Data bus inversion DBI for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2C serial presence-detect SPD EEPROM • 8 internal banks 2 groups of 4 banks each • Fixed burst chop BC of 4 and burst length BL of 8 via the mode register set MRS • Selectable BC4 or BL8 on-the-fly OTF • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control command and address bus Figure 1 260-Pin SODIMM MO-310 R/C Module Height 30mm in Options • Operating temperature Commercial 0°C TOPER 95°C • Package 256-pin DIMM halogen-free • Frequency/CAS latency 0.75ns CL = 19 DDR4-2666 0.83ns CL = 17 DDR4-2400 Marking None -2G6 -2G3 Table 1 Key Timing Parameters Speed Grade -2G6 -2G4 -2G3 -2G1 Industry Nomenclature PC4-2666 PC4-2400 PC4-2400 PC4-2133 CL = 20, CL = 19 2666 CL = 18 2666 2400 CL = 17 2400 CL = 16 2133 2400 2133 Data Rate MT/s CL = 15 2133 CL = 14 1866 CL = CL = 13 12 1866 1600 1866 1600 1866 1600 1866 1600 CL = 11 1600 CL = 10 1333 tRCD tRP CL = 9 ns 1333 1333 tRC ns Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

PDF Datasheet Preview

2GB x64, SR 260-Pin DDR4 SODIMM Features

DDR4 SDRAM SODIMM

MTA4ATF25664HZ 2GB
• DDR4 functionality and operations supported as defined in the component data sheet
• 260-pin, small-outline dual in-line memory module SODIMM
• Fast data transfer rates PC4-2666, PC4-2400
• 2GB 256 Meg x 64
• VDD = 1.20V NOM
• VPP = 2.5V NOM
• VDDSPD = 2.5V NOM
• Nominal and dynamic on-die termination ODT for
data, strobe, and mask signals
• Low-power auto self refresh LPASR
• Data bus inversion DBI for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2C serial presence-detect SPD EEPROM
• 8 internal banks 2 groups of 4 banks each
• Fixed burst chop BC of 4 and burst length BL of 8
via the mode register set MRS
• Selectable BC4 or BL8 on-the-fly OTF
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control command and address bus

Figure 1 260-Pin SODIMM MO-310 R/C

Module Height 30mm in

Options
• Operating temperature Commercial 0°C TOPER 95°C
• Package 256-pin DIMM halogen-free
• Frequency/CAS latency 0.75ns CL = 19 DDR4-2666 0.83ns CL = 17 DDR4-2400

Marking

None
-2G6 -2G3

Table 1 Key Timing Parameters

Speed Grade -2G6 -2G4 -2G3 -2G1

Industry Nomenclature

PC4-2666

PC4-2400

PC4-2400

PC4-2133

CL = 20, CL = 19
2666

CL = 18 2666 2400

CL = 17 2400

CL = 16 2133 2400 2133

Data Rate MT/s

CL = 15 2133

CL = 14 1866

CL = CL = 13 12 1866 1600 1866 1600 1866 1600 1866 1600

CL = 11 1600

CL = 10 1333
tRCD tRP CL = 9 ns
1333
1333
tRC ns

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.

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Datasheet ID: MTA4ATF25664HZ-2G6B1 648517