MT9HVF3272KY-53EB1

MT9HVF3272KY-53EB1 Datasheet

MT9HVF6472 P K 512MB MT9HVF12872 P K 1GB

Part	Datasheet
MT9HVF3272KY-53EB1	MT9HVF3272KY-53EB1 (pdf)

Related Parts	Information
MT9HVF6472KY-53EB1	MT9HVF6472KY-53EB1
MT9HVF12872KY-53EA1	MT9HVF12872KY-53EA1
MT9HVF6472PKY-40EB1	MT9HVF6472PKY-40EB1
MT9HVF3272PKY-667B1	MT9HVF3272PKY-667B1
MT9HVF12872PKY-667A1	MT9HVF12872PKY-667A1
MT9HVF6472KY-40EB2	MT9HVF6472KY-40EB2
MT9HVF6472KY-53EB2	MT9HVF6472KY-53EB2
MT9HVF6472PKY-53EB1	MT9HVF6472PKY-53EB1
MT9HVF12872KY-40EA1	MT9HVF12872KY-40EA1
MT9HVF6472KY-40ED2	MT9HVF6472KY-40ED2
MT9HVF12872PKY-40EA1	MT9HVF12872PKY-40EA1
MT9HVF3272KY-667B1	MT9HVF3272KY-667B1
MT9HVF3272PKY-53EB1	MT9HVF3272PKY-53EB1
MT9HVF3272PKY-40EB1	MT9HVF3272PKY-40EB1
MT9HVF3272KY-40EB1	MT9HVF3272KY-40EB1
MT9HVF12872PKY-53EA1	MT9HVF12872PKY-53EA1
MT9HVF12872KY-667A1	MT9HVF12872KY-667A1
MT9HVF6472KY-667B2	MT9HVF6472KY-667B2

PDF Datasheet Preview
512MB, 1GB x72, ECC, SR 244-Pin DDR2 VLP Mini-RDIMM Features DDR2 SDRAM VLP Mini-RDIMM MT9HVF6472 P K 512MB MT9HVF12872 P K 1GB For component data sheets, refer to Micron’s Web site: • 244-pin, very low profile mini registered dual in-line memory module VLP Mini-RDIMM • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB 64 Meg x 72 or 1GB 128 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Supports duplicate output strobe RDQS/RDQS# • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts • Single rank Figure 1 244-Pin VLP Mini-RDIMM PCB height 18.2mm 0.72in Options • Parity • Operating temperature1 Commercial 0°C TA +70°C Industrial TA +85°C • Package 244-pin DIMM Pb-free • Frequency/CAS latency2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 18.2mm 0.72in Marking None I -80E -800 -667 -53E -40E Notes Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Table 1: Speed Grade -80E -800 -667 -53E -40E Key Timing Parameters Industry Nomenclature PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 CL = 6 Data Rate MT/s CL = 5 CL = 4 CL = 3 tRCD ns tRP ns tRC ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 2005 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

PDF Datasheet Preview

512MB, 1GB x72, ECC, SR 244-Pin DDR2 VLP Mini-RDIMM Features

DDR2 SDRAM VLP Mini-RDIMM

MT9HVF6472 P K 512MB MT9HVF12872 P K 1GB

For component data sheets, refer to Micron’s Web site:
• 244-pin, very low profile mini registered dual in-line memory module VLP Mini-RDIMM
• Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400
• 512MB 64 Meg x 72 or 1GB 128 Meg x 72
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Supports duplicate output strobe RDQS/RDQS#
• Programmable CAS# latency CL
• Posted CAS# additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination ODT
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Single rank

Figure 1 244-Pin VLP Mini-RDIMM

PCB height 18.2mm 0.72in

Options
• Parity
• Operating temperature1

Commercial 0°C TA +70°C Industrial TA +85°C
• Package
244-pin DIMM Pb-free
• Frequency/CAS latency2
2.5ns CL = 5 DDR2-800
2.5ns CL = 6 DDR2-800
3ns CL = 5 DDR2-667
3.75ns CL = 4 DDR2-533
5.0ns CL = 3 DDR2-400
• PCB height
18.2mm 0.72in

Marking

None I
-80E -800 -667 -53E -40E

Notes Contact Micron for industrial temperature module offerings.

CL = CAS READ latency registered mode will add one clock cycle to CL.

Table 1:

Speed Grade
-80E -800 -667 -53E -40E

Key Timing Parameters

Industry Nomenclature

PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200

CL = 6

Data Rate MT/s

CL = 5 CL = 4

CL = 3
tRCD ns
tRP ns
tRC ns

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2005 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT9HVF3272KY-53EB1 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT9HVF3272KY-53EB1 648498