MT9HTF12872KY-53EA2
MT9HTF12872KY-53EA2 Datasheet
MT9HTF3272Y 256MB MT9HTF6472PY 512MB MT9HTF12872PY 1GB
| Part | Datasheet |
|---|---|
MT9HTF12872KY-53EA2 |
MT9HTF12872KY-53EA2 (pdf) |
| Related Parts | Information |
|---|---|
MT9HTF6472Y-40ED4 |
MT9HTF6472Y-40ED4 |
MT9HTF3272PY-53EB1 |
MT9HTF3272PY-53EB1 |
MT9HTF3272PY-667B1 |
MT9HTF3272PY-667B1 |
MT9HTF12872PY-40EA1 |
MT9HTF12872PY-40EA1 |
MT9HTF12872PY-53EA1 |
MT9HTF12872PY-53EA1 |
|
MT9HTF12872KY-40EA2 |
MT9HTF12872KY-40EA2 |
|
MT9HTF12872PKY-40EA2 |
MT9HTF12872PKY-40EA2 |
MT9HTF3272PY-40EB1 |
MT9HTF3272PY-40EB1 |
MT9HTF3272Y-667B3 |
MT9HTF3272Y-667B3 |
MT9HTF6472PY-40ED2 |
MT9HTF6472PY-40ED2 |
MT9HTF6472Y-53ED4 |
MT9HTF6472Y-53ED4 |
MT9HTF6472PY-53ED2 |
MT9HTF6472PY-53ED2 |
MT9HTF6472Y-667D4 |
MT9HTF6472Y-667D4 |
MT9HTF6472PY-667D2 |
MT9HTF6472PY-667D2 |
MT9HTF6472Y-80ED4 |
MT9HTF6472Y-80ED4 |
MT9HTF6472PY-80ED2 |
MT9HTF6472PY-80ED2 |
|
MT9HTF12872PKY-53EA2 |
MT9HTF12872PKY-53EA2 |
MT9HTF3272Y-40EB2 |
MT9HTF3272Y-40EB2 |
MT9HTF12872Y-40ED1 |
MT9HTF12872Y-40ED1 |
MT9HTF12872Y-53ED1 |
MT9HTF12872Y-53ED1 |
MT9HTF12872Y-53EA1 |
MT9HTF12872Y-53EA1 |
MT9HTF12872Y-40EA1 |
MT9HTF12872Y-40EA1 |
MT9HTF3272Y-53EB2 |
MT9HTF3272Y-53EB2 |
MT9HTF3272Y-40EB3 |
MT9HTF3272Y-40EB3 |
| PDF Datasheet Preview |
|---|
| 256MB, 512MB, 1GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT9HTF3272Y 256MB MT9HTF6472PY 512MB MT9HTF12872PY 1GB • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 256MB 32 Meg x 72 , 512MB 64 Meg x 72 , or 1GB 128 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Single rank • Gold edge contacts Figure 1 240-Pin RDIMM MO-237 R/C A, Nonparity R/C F, Parity Module height 30mm 1.18in Options • Parity • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM lead-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 3 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 Marking None I -80E -800 -667 -53E -40E Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Not available in 256MB module density. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200 |
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