MT9HTF6472PKY-40EB3
MT9HTF6472PKY-40EB3 Datasheet
MT9HTF3272 P K 256MB MT9HTF6472 P K 512MB MT9HTF12872 P K 1GB
| Part | Datasheet |
|---|---|
MT9HTF6472PKY-40EB3 |
MT9HTF6472PKY-40EB3 (pdf) |
| Related Parts | Information |
|---|---|
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MT9HTF12872KY-53EA1 |
MT9HTF12872KY-53EA1 |
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MT9HTF12872KY-40EA1 |
MT9HTF12872KY-40EA1 |
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MT9HTF12872KY-53ED1 |
MT9HTF12872KY-53ED1 |
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MT9HTF3272PKY-40EB2 |
MT9HTF3272PKY-40EB2 |
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MT9HTF12872KY-667A2 |
MT9HTF12872KY-667A2 |
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MT9HTF6472KY-53EB1 |
MT9HTF6472KY-53EB1 |
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MT9HTF12872KY-40ED1 |
MT9HTF12872KY-40ED1 |
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MT9HTF6472PKY-53EB1 |
MT9HTF6472PKY-53EB1 |
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MT9HTF6472KY-40EB3 |
MT9HTF6472KY-40EB3 |
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MT9HTF6472KY-53EB3 |
MT9HTF6472KY-53EB3 |
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MT9HTF6472KY-667B3 |
MT9HTF6472KY-667B3 |
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MT9HTF6472PKY-53EB3 |
MT9HTF6472PKY-53EB3 |
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MT9HTF6472KY-40EB1 |
MT9HTF6472KY-40EB1 |
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MT9HTF3272KY-53EB2 |
MT9HTF3272KY-53EB2 |
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MT9HTF3272KY-40EB2 |
MT9HTF3272KY-40EB2 |
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MT9HTF6472KY-667D2 |
MT9HTF6472KY-667D2 |
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MT9HTF6472PKY-667B3 |
MT9HTF6472PKY-667B3 |
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MT9HTF3272PKY-53EB2 |
MT9HTF3272PKY-53EB2 |
| PDF Datasheet Preview |
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| 256MB, 512MB, 1GB x72, SR 244-Pin DDR2 Registered MiniDIMM Features DDR2 SDRAM Registered MiniDIMM MT9HTF3272 P K 256MB MT9HTF6472 P K 512MB MT9HTF12872 P K 1GB For component specifications, refer to Micron’s Web site: • 244-pin, mini dual in-line memory module MiniDIMM • Fast data transfer rates PC2-3200, PC2-4200, or PC2-5300 • Supports ECC error detection and correction • 256MB 32 Meg x 72 , 512MB 64 Meg x 72 , 1GB 128 Meg x 72 • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC standard 1.8V I/O SSTL_18 compatible • Differential data strobe DQS, DQS# option • Four-bit prefetch architecture • DLL to align DQ and DQS transitions with CK • Multiple internal device banks for concurrent operation • Supports duplicate output strobe RDQS/RDQS# • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts • Single rank Figure 8 244-Pin DIMM MO-244 R/C “A” Height 30mm in Options • Parity • Package 244-pin DIMM lead-free • Frequency/CAS latency1 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 2 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 30mm 1.18in Marking -80E -800 -667 -53E -40E Notes CL = CAS READ latency registered mode will add one clock cycle to CL. Not available in 256MB density. Table 1 Address Table Refresh count Row addressing Device bank addressing Device page size per bank Device configuration Column addressing Module rank addressing 256MB 8K 4 BA0, BA1 1KB 256Mb 32 Meg x 8 1K 1 S0# 512MB 8K 16K 4 BA0, BA1 1KB 512Mb 64 Meg x 8 1K 1 S0# 8K 16K 8 BA0, BA1, BA2 1KB 1Gb 128 Meg x 8 1K 1 S0# Micron Technology, Inc., reserves the right to change products or specifications without notice. 2005 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256MB, 512MB, 1GB x72, SR 244-Pin DDR2 Registered MiniDIMM Features Table 2: Speed Grade -80E -800 -667 -53E -40E Key Timing Parameters Industry Nomenclature PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 |
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