MT9HTF6472FY-667B4D3

MT9HTF6472FY-667B4D3 Datasheet

MT9HTF6472F 512MB MT9HTF12872F 1GB

Part	Datasheet
MT9HTF6472FY-667B4D3	MT9HTF6472FY-667B4D3 (pdf)

Related Parts	Information
MT9HVF6472PZ-667G1	MT9HVF6472PZ-667G1
MT9HVF12872PZ-80EH1	MT9HVF12872PZ-80EH1
MT9HVF12872PZ-667H1	MT9HVF12872PZ-667H1
MT9HTF12872FY-53EA4D3	MT9HTF12872FY-53EA4D3
MT9HTF6472FY-53EB4D3	MT9HTF6472FY-53EB4D3
MT9HTF6472FY-53ED4E3	MT9HTF6472FY-53ED4E3
MT9HTF12872FY-80EE1D4	MT9HTF12872FY-80EE1D4
MT9HTF12872FY-667A4D3	MT9HTF12872FY-667A4D3
MT9HTF6472FY-667D4E3	MT9HTF6472FY-667D4E3
MT9HTF12872FY-53EA4E3	MT9HTF12872FY-53EA4E3
MT9HTF12872FY-667A4E3	MT9HTF12872FY-667A4E3
MT9HTF6472FY-53EB4E3	MT9HTF6472FY-53EB4E3
MT9HTF6472FY-667B4E3	MT9HTF6472FY-667B4E3

PDF Datasheet Preview
512MB, 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT9HTF6472F 512MB MT9HTF12872F 1GB For the component data sheet, refer to Micron’s Web site: • 240-pin, DDR2 fully-buffered dual in-line memory module FBDIMM • Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400 • 512MB 64 Meg x 72 , 1GB 128 Meg x 72 • Gb/s, Gb/s, and Gb/s link transfer rates • High-speed, 1.5V differential, point-to-point link between the host controller and advanced memory buffer AMB • Fault tolerant can work around a bad bit lane in each direction • High-density scaling with up to eight FBDIMMs per channel • SMBus interface to AMB for configuration register access • In-band and out-of-band command access • Deterministic protocol Enables memory controller to optimize DRAM accesses for maximum performance Delivers precise control and repeatable memory behavior • Automatic DDR2 SDRAM bus and channel calibration • Transmitter de-emphasis to reduce ISI • MBIST and IBIST test functions • Transparent mode for DRAM test support Figure 1 240-Pin FBDIMM MO-256 R/C A PCB height 30.35mm 1.19in Features continued • VDD = VDDQ = +1.8V for DRAM • VREF = 0.9V SDRAM command and address termination • VCC = 1.5V for AMB • VDDSPD = +3.0V to +3.6V for AMB and EEPROM • Serial presence-detect SPD with EEPROM • Gold edge contacts • Single rank • Supports 95°C operation with 2X refresh Options • Package 240-pin DIMM Pb-free • Frequency/CAS latency 2.5ns CL = 5 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 1 Marking -80E -667 -53E Notes Not recommended for new designs. Table 1 Key Timing Parameters Speed Data Rate MT/s tRCD Grade Industry Nomenclature CL = 5 CL = 4 CL = 3 -80E PC2-6400 -667 PC2-5300 -53E PC2-4200 Micron Technology, Inc., reserves the right to change products or specifications without notice. 2005 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512MB, 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features continued Table 2 Addressing Parameter Refresh count Device bank address Device page size per bank Device configuration Row address Column address Module rank address

PDF Datasheet Preview

512MB, 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features

DDR2 SDRAM FBDIMM

MT9HTF6472F 512MB MT9HTF12872F 1GB

For the component data sheet, refer to Micron’s Web site:
• 240-pin, DDR2 fully-buffered dual in-line memory module FBDIMM
• Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400
• 512MB 64 Meg x 72 , 1GB 128 Meg x 72
• Gb/s, Gb/s, and Gb/s link transfer rates
• High-speed, 1.5V differential, point-to-point link
between the host controller and advanced memory buffer AMB
• Fault tolerant can work around a bad bit lane in each direction
• High-density scaling with up to eight FBDIMMs per channel
• SMBus interface to AMB for configuration register access
• In-band and out-of-band command access
• Deterministic protocol Enables memory controller to optimize DRAM
accesses for maximum performance Delivers precise control and repeatable memory
behavior
• Automatic DDR2 SDRAM bus and channel
calibration
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DRAM test support

Figure 1 240-Pin FBDIMM MO-256 R/C A PCB height 30.35mm 1.19in

Features continued
• VDD = VDDQ = +1.8V for DRAM
• VREF = 0.9V SDRAM command and address
termination
• VCC = 1.5V for AMB
• VDDSPD = +3.0V to +3.6V for AMB and EEPROM
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Single rank
• Supports 95°C operation with 2X refresh

Options
• Package 240-pin DIMM Pb-free
• Frequency/CAS latency 2.5ns CL = 5 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 1

Marking
-80E -667 -53E

Notes Not recommended for new designs.

Table 1 Key Timing Parameters

Speed

Data Rate MT/s
tRCD

Grade

Industry Nomenclature

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-667

PC2-5300
-53E

PC2-4200

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2005 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features continued

Table 2 Addressing

Parameter Refresh count Device bank address Device page size per bank Device configuration Row address Column address Module rank address

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Datasheet ID: MT9HTF6472FY-667B4D3 648492