MT8HTF12864AY-53EA9

MT8HTF12864AY-53EA9 Datasheet

MT8HTF3264AY 256MB MT8HTF6464AY 512MB MT8HTF12864AY 1GB

Part	Datasheet
MT8HTF12864AY-53EA9	MT8HTF12864AY-53EA9 (pdf)

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MT8HTF3264AY-53EB3	MT8HTF3264AY-53EB3
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MT8HTF12864AY-53ED1	MT8HTF12864AY-53ED1
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MT8HTF12864AY-40EA1	MT8HTF12864AY-40EA1
MT8HTF3264AY-40EB3	MT8HTF3264AY-40EB3
MT8HTF3264AY-53EB4	MT8HTF3264AY-53EB4
MT8HTF3264AY-667B6	MT8HTF3264AY-667B6
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MT8HTF6464AY-80ED4	MT8HTF6464AY-80ED4
MT8HTF6464AY-53ED8	MT8HTF6464AY-53ED8

PDF Datasheet Preview
256MB, 512MB, 1GB x64, SR 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT8HTF3264AY 256MB MT8HTF6464AY 512MB MT8HTF12864AY 1GB • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, PC2-6400, or PC2-8500 • 256MB 32 Meg x 64 , 512MB 64 Meg x 64 , or 1GB 128 Meg x 64 • VDD = VDDQ = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Single rank Figure 1 240-Pin UDIMM MO-237 R/C A and D PCB height 30.0mm 1.18in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM lead-free • Frequency/CL2 1.875ns CL = 7 DDR2-1066 3 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 4 5.0ns CL = 3 DDR2-400 Marking None I -1GA -80E -800 -667 -53E -40E Contact Micron for industrial temperature module offerings. CL = CAS READ latency. Not recommended for new designs. Table 1 Key Timing Parameters Speed Grade -1GA -80E -800 -667 -53E -40E Industry Nomenclature PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 CL = 7 1066 Data Rate MT/s CL = 6 CL = 5 CL = 4 CL = 3 400 tRCD ns 15 tRP ns 15 tRC ns 60 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256MB, 512MB, 1GB x64, SR 240-Pin DDR2 SDRAM UDIMM Features Table 2 Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address 256MB 8K 16K A[12:0] 4 BA[2:0] 256Mb 32 Meg x 8 1K A[9:0] 1 S0#

PDF Datasheet Preview

256MB, 512MB, 1GB x64, SR 240-Pin DDR2 SDRAM UDIMM Features

DDR2 SDRAM UDIMM

MT8HTF3264AY 256MB MT8HTF6464AY 512MB MT8HTF12864AY 1GB
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates PC2-3200, PC2-4200,

PC2-5300, PC2-6400, or PC2-8500
• 256MB 32 Meg x 64 , 512MB 64 Meg x 64 , or 1GB 128 Meg x 64
• VDD = VDDQ = 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Single rank

Figure 1 240-Pin UDIMM MO-237 R/C A and D

PCB height 30.0mm 1.18in

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 240-pin DIMM lead-free
• Frequency/CL2 1.875ns CL = 7 DDR2-1066 3 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 4 5.0ns CL = 3 DDR2-400

Marking

None I
-1GA -80E -800 -667 -53E -40E

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency.

Not recommended for new designs.

Table 1 Key Timing Parameters

Speed Grade -1GA
-80E -800 -667 -53E -40E

Industry Nomenclature

PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200

CL = 7 1066

Data Rate MT/s

CL = 6 CL = 5 CL = 4

CL = 3 400
tRCD ns 15
tRP ns 15
tRC ns 60 55

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
256MB, 512MB, 1GB x64, SR 240-Pin DDR2 SDRAM UDIMM Features

Table 2 Addressing

Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address
256MB 8K
16K A[12:0] 4 BA[2:0]
256Mb 32 Meg x 8 1K A[9:0] 1 S0#

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Datasheet ID: MT8HTF12864AY-53EA9 648481