MT4HTF1664AY 128MB MT4HTF3264AY 256MB MT4HTF6464AY 512MB
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MT4HTF1664AY-53EB1 (pdf) |
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MT4HTF6464AY-667E1 |
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MT4HTF6464AY-53EA1 |
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MT4HTF1664AY-40EB1 |
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PDF Datasheet Preview |
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128MB, 256MB, 512MB x64, SR 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT4HTF1664AY 128MB MT4HTF3264AY 256MB MT4HTF6464AY 512MB • 240-pin, unbuffered dual in-line memory module UDIMM • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 128MB 16 Meg x 64 , 256MB 32 Meg x 64 , 512MB 64 Meg x 64 • VDD = VDDQ = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Single rank Figure 1 240-Pin UDIMM MO-237 R/C Module height 30.0mm 1.18in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM lead-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 4 2.5ns CL = 6 DDR2-800 4 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 3 5.0ns CL = 3 DDR2-400 3 Marking None I -80E -800 -667 -53E -40E Contact Micron for industrial temperature module offerings. CL = CAS READ latency. Contact Micron for product availability. Not available in 128MB and 256MB. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 |
More datasheets: 61125-220CALF | 61125-040CALF | MAX1848EVKIT | 0600-00056 | MIKROE-2561 | MIKROE-2454 | DB-25P-K87 | MT4HTF6464AY-40EA1 | MT4HTF3264AY-53ED3 | MT4HTF1664AY-667B1 |
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