MT36RTF51272FZ-667H1D6

MT36RTF51272FZ-667H1D6 Datasheet

MT36RTF51272FZ 4GB

Part	Datasheet
MT36RTF51272FZ-667H1D6	MT36RTF51272FZ-667H1D6 (pdf)

PDF Datasheet Preview
4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features 1.55V DDR2 FBDIMM MT36RTF51272FZ 4GB • 240-pin, fully buffered DIMM FBDIMM • Very low power DDR2 operation • 1.5V VDD 1.9V for DDR2 SDRAM • 1.5V VDD 1.9V for advanced memory buffer AMB DRAM I/O • VDD = 1.55V • Backward compatible with systems designed for the standard 1.8V FBDIMM • Dual rank • Component configuration 256 Meg x 4 Functionality This 1.55V FBDIMM consumes less power than a standard 1.8V FBDIMM. However, it has the same timing and operating parameters as a standard FBDIMM. This enables backward compatibility with systems designed for use with standard FBDIMMs. Information in the 1.8V DDR2 FBDIMM data sheet is directly applicable to this 1.55V DDR2 FBDIMM, except where stated otherwise in this data sheet. Figure 1 240-Pin FBDIMM MO-256 R/C E Module height 30.35mm 1.19in Options • Package 240-pin DIMM halogen-free • Frequency/CL1 3.0ns CL = 5 DDR2-667 Note CL = CAS READ latency. Marking Z -667 Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 5 CL = 4 CL = 3 -667 PC2-5300 -53E PC2-4200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features Table 2 Addressing Parameter Refresh count Device bank address Device page size per bank Device configuration Row address Column address Module rank address 4GB 8K 8 BA[2:0] 1KB 1Gb 256 Meg x 4 16K A[13:0] 2K A[11, 9:0] 2 S#[1:0] Table 3 Part Numbers and Timing Parameters 4GB Base device MT47R256M4,1 1Gb DDR2 SDRAM Part Number2 Module Density Configuration

PDF Datasheet Preview

4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features
1.55V DDR2 FBDIMM

MT36RTF51272FZ 4GB
• 240-pin, fully buffered DIMM FBDIMM
• Very low power DDR2 operation
• 1.5V VDD 1.9V for DDR2 SDRAM
• 1.5V VDD 1.9V for advanced memory buffer

AMB DRAM I/O
• VDD = 1.55V
• Backward compatible with systems designed for the
standard 1.8V FBDIMM
• Dual rank
• Component configuration 256 Meg x 4

Functionality

This 1.55V FBDIMM consumes less power than a standard 1.8V FBDIMM. However, it has the same timing and operating parameters as a standard FBDIMM. This enables backward compatibility with systems designed for use with standard FBDIMMs.

Information in the 1.8V DDR2 FBDIMM data sheet is directly applicable to this 1.55V DDR2 FBDIMM, except where stated otherwise in this data sheet.

Figure 1 240-Pin FBDIMM MO-256 R/C E

Module height 30.35mm 1.19in

Options
• Package 240-pin DIMM halogen-free
• Frequency/CL1 3.0ns CL = 5 DDR2-667

Note CL = CAS READ latency.

Marking

Z -667

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 5

CL = 4

CL = 3
-667

PC2-5300
-53E

PC2-4200

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features

Table 2 Addressing

Parameter Refresh count Device bank address Device page size per bank Device configuration Row address Column address Module rank address
4GB 8K 8 BA[2:0] 1KB 1Gb 256 Meg x 4 16K A[13:0] 2K A[11, 9:0] 2 S#[1:0]

Table 3 Part Numbers and Timing Parameters 4GB

Base device MT47R256M4,1 1Gb DDR2 SDRAM

Part Number2

Module Density Configuration

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Datasheet ID: MT36RTF51272FZ-667H1D6 648383