MT36HTS51272Y-53EA2

MT36HTS51272Y-53EA2 Datasheet

MT36HTJ51272 P 4GB

Part	Datasheet
MT36HTS51272Y-53EA2	MT36HTS51272Y-53EA2 (pdf)

Related Parts	Information
MT36HTJ51272Y-40EA2	MT36HTJ51272Y-40EA2
MT36HTJ51272Y-40ED2	MT36HTJ51272Y-40ED2

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4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM RDIMM MT36HTJ51272 P 4GB For the latest data sheet and for component data sheets, refer to Micron's Web site: • Supports 95°C with double refresh • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, or PC2-5300 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4-bit prefetch architecture • DLL to align DQ and DQS transitions with CK • Dual rank • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts Figure 1 240-Pin DIMM MO-237 R/C “K” Height 30mm 1.18in Options Marking • Parity • Package 240-pin DIMM lead-free • Frequency/CAS latency1 3.0ns CL = 5 DDR2-667 2 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 30mm 1.18in -667 -53E -40E Notes CL = CAS READ latency registered mode will add one clock cycle to CL. Contact Micron for product availability. Table 1 Key Timing Parameters Speed Data Rate MT/s tRCD Grade Industry Nomenclature CL = 5 CL = 4 CL = 3 -667 -53E -40E PC2-5300 PC2-4200 PC2-3200 Table 2 Addressing Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address 8K 16K 8 1KB 1Gb 256 Meg x 4 2K A11 2 S0#, S1# Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Pin Assignments and Descriptions

PDF Datasheet Preview

4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features

DDR2 SDRAM Registered DIMM RDIMM

MT36HTJ51272 P 4GB

For the latest data sheet and for component data sheets, refer to Micron's Web site:
• Supports 95°C with double refresh
• 240-pin, registered dual in-line memory module
• Fast data transfer rates PC2-3200, PC2-4200, or

PC2-5300
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Dual rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency CL
• Posted CAS# additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination ODT
• Serial presence-detect SPD with EEPROM
• Gold edge contacts

Figure 1 240-Pin DIMM MO-237 R/C “K”

Height 30mm 1.18in

Options

Marking
• Parity
• Package
240-pin DIMM lead-free
• Frequency/CAS latency1
3.0ns CL = 5 DDR2-667 2
3.75ns CL = 4 DDR2-533
5.0ns CL = 3 DDR2-400
• PCB height
30mm 1.18in
-667 -53E -40E

Notes CL = CAS READ latency registered mode will add one clock cycle to CL.

Contact Micron for product availability.

Table 1 Key Timing Parameters

Speed

Data Rate MT/s
tRCD

Grade

Industry Nomenclature

CL = 5

CL = 4

CL = 3
-667 -53E -40E

PC2-5300 PC2-4200 PC2-3200

Table 2 Addressing

Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address
8K 16K 8
1KB 1Gb 256 Meg x 4 2K A11
2 S0#, S1#

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Pin Assignments and Descriptions

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT36HTS51272Y-53EA2 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT36HTS51272Y-53EA2 648371