MT36HTF25672 P 2GB MT36HTF51272 P 4GB
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MT36HTF25672Y-80ED1 (pdf) |
Related Parts | Information |
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MT36HTF25672Y-53ED1 |
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MT36HTF25672PY-667DZES |
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MT36HTF25672Y-40ED1 |
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MT36HTF25672PY-40EB1 |
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MT36HTF25672PY-53EB1 |
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MT36HTF51272PY-667E1 |
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MT36HTF25672Y-667D1 |
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MT36HTF25672PY-667D1 |
PDF Datasheet Preview |
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2GB, 4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM RDIMM MT36HTF25672 P 2GB MT36HTF51272 P 4GB For the latest component data sheets, refer to Micron’s Web site: • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 2GB 256 Meg x 72 , 4GB 512 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Dual rank • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts Figure 1 240-Pin DIMM MO-237 R/C R/C Height 30mm 1.18in Options • Parity • Operating temperature Commercial 0°C TC +85°C 1 • Package 240-pin DIMM Pb-free • Frequency/CAS latency3 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 2 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 30mm 1.18in Marking None -80E -800 -667 -53E -40E Notes Contact Micron for industrial temperature module offerings. Contact Micron for product availability. CL = CAS READ latency registered mode will add one clock cycle to CL. Table 1: Speed Grade -80E -800 -667 -53E -40E Key Timing Parameters Industry Nomenclature PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 CL = 6 Data Rate MT/s CL = 5 800 667 CL = 4 533 400 CL = 3 tRCD ns tRP ns |
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