152-Ball Package-on-Package PoP Combination Memory TI OMAP MT29C Family
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MT29C4G48MAZAPAKD-5 IT (pdf) |
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PDF Datasheet Preview |
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152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package PoP Combination Memory TI OMAP MT29C Family Current production part numbers See Table 1 on page 3 • NAND Flash and Mobile LPDRAM components • RoHS-compliant, “green” package • Separate NAND Flash and Mobile LPDRAM interfaces • Space-saving package-on-package combination • Low-voltage operation • Industrial temperature range to +85°C NAND Flash-Specific Features • Organization Page size x8 2112 bytes 2048 + 64 bytes x16 1056 words 1024 + 32 words Block size 64 pages 128K + 4K bytes Mobile LPDRAM-Specific Features • No external voltage reference required • No minimum clock rate requirement • 1.8V LVCMOS-compatible inputs • Programmable burst lengths • Partial-array self refresh PASR • Deep power-down DPD mode • Selectable output drive strength • STATUS REGISTER READ SRR supported1 Figure 1 PoP Block Diagram NAND Flash Power NAND Flash Device NAND Flash Interface LP-DRAM Power LP-DRAM Device LP-DRAM Interface Options • LP-DRAM 166 MHz CL32 133 MHz CL3 Marking -6 -75 Notes Contact factory for remapped SRR output. CL = CAS READ latency. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2008 Micron Technology, Inc. All rights reserved. and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Part Numbering Information 152-Ball PoP Part Numbering Information 152-Ball PoP Micron NAND Flash and LPDRAM devices are available in different configurations and densities. Figure 2 152-Ball Part Number Chart Micron Technology Product Family 29C = NAND + LPDRAM MCP NAND Density 1G = 1Gb 2G = 2Gb 4G = 4Gb LPDRAM Density 12M = 512Mb 24M = 1024Mb 48M = 2048Mb Operating Voltage Range A = 1.8V NAND Flash Configuration Width Density Generation 1Gb First D x16 1Gb First 2Gb Second K x16 2Gb Second 4Gb First |
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