MT28F008B5VG-8 B TR

MT28F008B5VG-8 B TR Datasheet

MT28F008B5 MT28F800B5

Part	Datasheet
MT28F008B5VG-8 B TR	MT28F008B5VG-8 B TR (pdf)

Related Parts	Information
MT28F800B5WP-8 BET TR	MT28F800B5WP-8 BET TR
MT28F800B5WP-8 T TR	MT28F800B5WP-8 T TR
MT28F800B5WP-8 T	MT28F800B5WP-8 T
MT28F008B5VG-8 T	MT28F008B5VG-8 T
MT28F008B5VG-8 T TR	MT28F008B5VG-8 T TR
MT28F008B5VG-8 TET TR	MT28F008B5VG-8 TET TR
MT28F008B5VG-8 TET	MT28F008B5VG-8 TET
MT28F800B5WG-8 B TR	MT28F800B5WG-8 B TR
MT28F008B5VG-8 B	MT28F008B5VG-8 B
MT28F008B5VG-8 BET TR	MT28F008B5VG-8 BET TR
MT28F800B5WG-8 BET TR	MT28F800B5WG-8 BET TR
MT28F800B5WG-8 TET TR	MT28F800B5WG-8 TET TR
MT28F800B5WP-8 B	MT28F800B5WP-8 B
MT28F800B5WG-8 T TR	MT28F800B5WG-8 T TR
MT28F800B5WG-8 BET	MT28F800B5WG-8 BET
MT28F800B5WG-8 TET	MT28F800B5WG-8 TET
MT28F800B5WG-8 B	MT28F800B5WG-8 B
MT28F800B5SG-8 TET TR	MT28F800B5SG-8 TET TR
MT28F008B5VG-8 BET	MT28F008B5VG-8 BET
MT28F800B5SG-8 TET	MT28F800B5SG-8 TET
MT28F800B5SG-8 T TR	MT28F800B5SG-8 T TR
MT28F800B5SG-8 T	MT28F800B5SG-8 T
MT28F800B5SG-8 BET TR	MT28F800B5SG-8 BET TR
MT28F800B5SG-8 BET	MT28F800B5SG-8 BET
MT28F800B5WP-8 BET	MT28F800B5WP-8 BET
MT28F800B5SG-8 B	MT28F800B5SG-8 B
MT28F800B5WP-8 B TR	MT28F800B5WP-8 B TR
MT28F800B5SG-8 B TR	MT28F800B5SG-8 B TR
MT28F800B5WG-8 T	MT28F800B5WG-8 T

PDF Datasheet Preview
FLASH MEMORY 8Mb SMART 5 BOOT BLOCK FLASH MEMORY MT28F008B5 MT28F800B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology • Eleven erase blocks 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks • Eight main memory blocks • Smart 5 technology B5 : 5V ±10% VCC 5V ±10% VPP application/ production programming1 • Advanced 0.18µm CMOS floating-gate process • Compatible with 0.3µm Smart 5 device • Address access time 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • TSOP and SOP packaging options • Byte- or word-wide READ and WRITE MT28F800B5, 1 Meg x 8/512K x 16 OPTIONS MARKING • Timing 80ns • Configurations 1 Meg x 8 512K x 16/1 Meg x 8 MT28F008B5 MT28F800B5 • Boot Block Starting Word Address Bottom • Operating Temperature Range Commercial 0ºC to +70ºC Extended -40ºC to +85ºC None ET • Packages MT28F008B5 Plastic 40-pin standard TSOP Type I Plastic 40-pin lead free TSOP Type I MT28F800B5 Plastic 48-pin standard TSOP Type I Plastic 48-pin lead free TSOP Type I Plastic 44-pin standard SOP Plastic 44-pin lead free SOP This generation of devices does not support 12V VPP compatibility production programming however, 5V VPP application production programming can be used with no loss of performance. Contact factory for availability. Part Number Example MT28F800B5WG-8 BET 40-Pin TSOP Type I 48-Pin TSOP Type I 44-Pin SOP2 The MT28F008B5 x8 and MT28F800B5 x16/x8 are nonvolatile, electrically block-erasable Flash , programmable read-only memories containing 8,388,608 bits organized as 524,288 words 16 bits or 1,048,576 bytes 8 bits . Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F008B5 and MT28F800B5 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Please refer to Micron’s Web site flash for the latest data sheet. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2002 Micron Technology Inc. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 8Mb SMART 5 BOOT BLOCK FLASH MEMORY

PDF Datasheet Preview

FLASH MEMORY
8Mb SMART 5 BOOT BLOCK FLASH MEMORY

MT28F008B5 MT28F800B5
5V Only, Dual Supply Smart 5 0.18µm Process Technology
• Eleven erase blocks 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks
• Eight main memory blocks
• Smart 5 technology B5 :
5V ±10% VCC 5V ±10% VPP application/
production programming1
• Advanced 0.18µm CMOS floating-gate process
• Compatible with 0.3µm Smart 5 device
• Address access time 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP and SOP packaging options
• Byte- or word-wide READ and WRITE

MT28F800B5, 1 Meg x 8/512K x 16

OPTIONS

MARKING
• Timing
80ns
• Configurations
1 Meg x 8 512K x 16/1 Meg x 8

MT28F008B5 MT28F800B5
• Boot Block Starting Word Address

Bottom
• Operating Temperature Range

Commercial 0ºC to +70ºC Extended -40ºC to +85ºC

None ET
• Packages

MT28F008B5

Plastic 40-pin standard TSOP Type I

Plastic 40-pin lead free TSOP Type I

MT28F800B5

Plastic 48-pin standard TSOP Type I

Plastic 48-pin lead free TSOP Type I

Plastic 44-pin standard SOP

Plastic 44-pin lead free SOP

This generation of devices does not support 12V VPP compatibility production programming however, 5V VPP application production programming can be used with no loss of performance.

Contact factory for availability.

Part Number Example MT28F800B5WG-8 BET
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP2

The MT28F008B5 x8 and MT28F800B5 x16/x8 are nonvolatile, electrically block-erasable Flash , programmable read-only memories containing 8,388,608 bits organized as 524,288 words 16 bits or 1,048,576 bytes 8 bits . Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.

The MT28F008B5 and MT28F800B5 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

Please refer to Micron’s Web site flash for the latest data sheet.

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2002 Micron Technology Inc.

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
8Mb SMART 5 BOOT BLOCK FLASH MEMORY

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT28F008B5VG-8BTR Datasheet file may be downloaded here without warranties.

Datasheet ID: MT28F008B5VG-8BTR 648361