MT28F400B5WG-8 B TR

MT28F400B5WG-8 B TR Datasheet

MT28F004B5 MT28F400B5

Part	Datasheet
MT28F400B5WG-8 B TR	MT28F400B5WG-8 B TR (pdf)

Related Parts	Information
MT28F004B5VG-8 TET	MT28F004B5VG-8 TET
MT28F400B5SP-8 T	MT28F400B5SP-8 T
MT28F004B5VP-8 T	MT28F004B5VP-8 T
MT28F004B5VP-8 T TR	MT28F004B5VP-8 T TR
MT28F400B5SG-8 T TR	MT28F400B5SG-8 T TR
MT28F400B5SG-8 T	MT28F400B5SG-8 T
MT28F400B5SG-8 BET	MT28F400B5SG-8 BET
MT28F400B5SG-8 B TR	MT28F400B5SG-8 B TR
MT28F400B5SG-8 B	MT28F400B5SG-8 B
MT28F400B5SG-8 TET	MT28F400B5SG-8 TET
MT28F004B5VG-8 T TR	MT28F004B5VG-8 T TR
MT28F400B5SG-8 BET TR	MT28F400B5SG-8 BET TR
MT28F400B5WG-8 T	MT28F400B5WG-8 T
MT28F004B5VG-8 T	MT28F004B5VG-8 T
MT28F400B5WP-8 TET	MT28F400B5WP-8 TET
MT28F004B5VG-8 TET TR	MT28F004B5VG-8 TET TR
MT28F400B5WP-8 T	MT28F400B5WP-8 T
MT28F400B5WP-8 B TR	MT28F400B5WP-8 B TR
MT28F400B5WP-8 B	MT28F400B5WP-8 B
MT28F400B5WG-8 TET TR	MT28F400B5WG-8 TET TR
MT28F004B5VG-8 B TR	MT28F004B5VG-8 B TR
MT28F400B5WG-8 T TR	MT28F400B5WG-8 T TR
MT28F400B5WP-8 TET TR	MT28F400B5WP-8 TET TR
MT28F400B5WG-8 BET TR	MT28F400B5WG-8 BET TR
MT28F400B5WG-8 BET	MT28F400B5WG-8 BET
MT28F004B5VG-8 B	MT28F004B5VG-8 B
MT28F400B5SG-8 TET TR	MT28F400B5SG-8 TET TR
MT28F400B5WG-8 B	MT28F400B5WG-8 B
MT28F400B5SP-8 T TR	MT28F400B5SP-8 T TR
MT28F400B5WG-8 TET	MT28F400B5WG-8 TET
MT28F004B5VG-8 BET TR	MT28F004B5VG-8 BET TR
MT28F400B5WP-8 T TR	MT28F400B5WP-8 T TR
MT28F004B5VG-8 BET	MT28F004B5VG-8 BET

PDF Datasheet Preview
FLASH MEMORY 4Mb SMART 5 BOOT BLOCK FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology • Seven erase blocks 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology B5 5V ±10% VCC 5V ±10% VPP application/production programming1 • Advanced 0.18µm CMOS floating-gate process • Compatible with 0.3µm Smart 5 device • Address access time 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRITE MT28F400B5, 256K x 16/512K x 8 • Byte-wide READ and WRITE only MT28F004B5, 512K x 8 • TSOP and SOP packaging options OPTIONS • Timing 80ns access • Configurations 512K x 8 256K x 16/512K x 8 • Boot Block Starting Word Address Top 3FFFFh Bottom • Operating Temperature Range Extended -40ºC to +85ºC • Packages MT28F004B5 Plastic 40-pin standard TSOP Type I Plastic 40-pin lead free TSOP Type I MT28F400B5 Plastic 48-pin standard TSOP Type I Plastic 48-pin lead free TSOP Type I Plastic 44-pin standard SOP Plastic 44-pin lead free SOP MARKING MT28F004B5 MT28F400B5 VG VP WG WP SG2 SP2 This generation of devices does not support 12V VPP compatibility production programming however, 5V VPP application production programming can be used with no loss of performance. Contact factory for availability. Part Number Example MT28F400B5WG-8 T 40-Pin TSOP Type I 48-Pin TSOP Type I 44-Pin SOP2 The MT28F004B5 x8 and MT28F400B5 x16, x8 are nonvolatile, electrically block-erasable Flash , programmable, read-only memories containing 4,194,304 bits organized as 262,144 words 16 bits or 524,288 bytes 8 bits . Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F004B5 and MT28F400B5 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Please refer to Micron’s Web site flash for the latest data sheet. 2002 Micron Technology, Inc. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 4Mb SMART 5 BOOT BLOCK FLASH MEMORY A15 A14 A13 A12 A11 A10 A9 A8 NC WE# RP# VPP WP# NC A17 A7 A6 A5 A4 A3 A2 A1 Pin Assignment Top View 48-Pin TSOP Type I BYTE# DQ15/ A-1 DQ14 DQ13 DQ12

PDF Datasheet Preview

FLASH MEMORY
4Mb SMART 5 BOOT BLOCK FLASH MEMORY

MT28F004B5 MT28F400B5
5V Only, Dual Supply Smart 5 0.18µm Process Technology
• Seven erase blocks 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks
• Smart 5 technology B5 5V ±10% VCC 5V ±10% VPP application/production programming1
• Advanced 0.18µm CMOS floating-gate process
• Compatible with 0.3µm Smart 5 device
• Address access time 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE

MT28F400B5, 256K x 16/512K x 8
• Byte-wide READ and WRITE only

MT28F004B5, 512K x 8
• TSOP and SOP packaging options

OPTIONS
• Timing 80ns access
• Configurations 512K x 8 256K x 16/512K x 8
• Boot Block Starting Word Address Top 3FFFFh Bottom
• Operating Temperature Range Extended -40ºC to +85ºC
• Packages MT28F004B5

Plastic 40-pin standard TSOP Type I Plastic 40-pin lead free TSOP Type I

MT28F400B5 Plastic 48-pin standard TSOP Type I Plastic 48-pin lead free TSOP Type I Plastic 44-pin standard SOP Plastic 44-pin lead free SOP

MARKING

MT28F004B5 MT28F400B5

VG VP

WG WP SG2 SP2

This generation of devices does not support 12V VPP compatibility production programming however, 5V VPP application production programming can be used with no loss of performance.

Contact factory for availability.

Part Number Example MT28F400B5WG-8 T
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP2

The MT28F004B5 x8 and MT28F400B5 x16, x8 are nonvolatile, electrically block-erasable Flash , programmable, read-only memories containing 4,194,304 bits organized as 262,144 words 16 bits or 524,288 bytes 8 bits . Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.

The MT28F004B5 and MT28F400B5 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

Please refer to Micron’s Web site flash for the latest data sheet.
2002 Micron Technology, Inc.

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
4Mb SMART 5 BOOT BLOCK FLASH MEMORY

A15 A14 A13 A12 A11 A10

A9 A8 NC WE# RP# VPP WP# NC A17 A7 A6 A5 A4 A3 A2 A1

Pin Assignment Top View
48-Pin TSOP Type I

BYTE#

DQ15/ A-1

DQ14

DQ13

DQ12

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT28F400B5WG-8BTR Datasheet file may be downloaded here without warranties.

Datasheet ID: MT28F400B5WG-8BTR 648359