MT28F400B3WG-8 B

MT28F400B3WG-8 B Datasheet

MT28F004B3 MT28F400B3

Part	Datasheet
MT28F400B3WG-8 B	MT28F400B3WG-8 B (pdf)

Related Parts	Information
MT28F004B3VG-8 B TR	MT28F004B3VG-8 B TR
MT28F400B3SG-8 B TR	MT28F400B3SG-8 B TR
MT28F400B3SG-8 BET	MT28F400B3SG-8 BET
MT28F400B3WG-8 BET TR	MT28F400B3WG-8 BET TR
MT28F004B3VG-8 B	MT28F004B3VG-8 B
MT28F400B3WG-8 TET	MT28F400B3WG-8 TET
MT28F400B3WG-8 T TR	MT28F400B3WG-8 T TR
MT28F400B3WG-8 T	MT28F400B3WG-8 T
MT28F400B3WG-8 BET	MT28F400B3WG-8 BET
MT28F400B3WG-8 TET TR	MT28F400B3WG-8 TET TR
MT28F400B3WG-8 B TR	MT28F400B3WG-8 B TR
MT28F004B3VG-8 BET	MT28F004B3VG-8 BET
MT28F004B3VG-8 TET TR	MT28F004B3VG-8 TET TR
MT28F004B3VG-8 BET TR	MT28F004B3VG-8 BET TR
MT28F004B3VG-8 T	MT28F004B3VG-8 T
MT28F004B3VG-8 T TR	MT28F004B3VG-8 T TR
MT28F004B3VG-8 TET	MT28F004B3VG-8 TET
MT28F400B3SG-8 T TR	MT28F400B3SG-8 T TR
MT28F400B3SG-8 B	MT28F400B3SG-8 B
MT28F400B3SG-8 BET TR	MT28F400B3SG-8 BET TR
MT28F400B3SG-8 T	MT28F400B3SG-8 T
MT28F400B3SG-8 TET TR	MT28F400B3SG-8 TET TR
MT28F400B3SG-8 TET	MT28F400B3SG-8 TET

PDF Datasheet Preview
FLASH MEMORY 4Mb SMART 3 BOOT BLOCK FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 • Seven erase blocks 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology B3 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.3µm Smart 3 device • Advanced 0.18µm CMOS floating-gate process • Address access time 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRITE MT28F400B3, 256K x 16/512K x 8 • Byte-wide READ and WRITE only MT28F004B3, 512K x 8 • TSOP and SOP packaging options Options • Timing • 80ns access • Configurations • 1 Meg x 8 • 512K x 16/1 Meg x 8 • Boot Block Starting Word Address • Top 3FFFFh • Bottom • Operating Temperature Range • Extended -40ºC to +85ºC • Packages MT28F004B3 Plastic 40-pin standard TSOP Type I Plastic 40-pin lead free TSOP Type I MT28F400B3 Plastic 48-pin standard TSOP Type I Plastic 48-pin lead free TSOP Type I Plastic 44-pin standard SOP Plastic 44-pin lead free SOP Marking MT28F004B3 MT28F400B3 VG VP WG WP SG2 SP2 NOTE: This generation of devices does not support 12V VPP production programming however, 5V VPP application production programming can be used with no loss of performance. Contact Factory for availability 40-Pin TSOP Type I 48-Pin TSOP Type I 44-Pin SOP The MT28F004B3 x8 and MT28F400B3 x16/x8 are nonvolatile, electrically block-erasable flash , programmable memory devices containing 4,194,304 bits organized as 262,144 words 16 bits or 524,288 bytes 8 bits . Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Refer to Micron’s Web site for the latest data sheet. Part Number Example: MT28F400B3SG-8 T 2003 Micron Technology, Inc. All rights reserved. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY Figure 1 Pin Assignment Top View 48-Pin TSOP Type I 44-Pin SOP BYTE# DQ15/ A-1 DQ14 DQ13 DQ12 DQ11 DQ10 ORDER NUMBER AND PART MARKING MT28F400B3WG-8 B MT28F400B3WP-8 B MT28F400B3WG-8 T MT28F400B3WP-8 T MT28F400B3WG-8 BET MT28F400B3WP-8 BET MT28F400B3WG-8 TET MT28F400B3WP-8 TET VPP 1 WP# 2 A17 3 A7 4 A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 CE# 12 VSS 13 OE# 14 DQ0 15 DQ8 16 DQ1 17 DQ9 18 DQ2 19 DQ10 20 DQ3 21 DQ11 22

PDF Datasheet Preview

FLASH MEMORY
4Mb SMART 3 BOOT BLOCK FLASH MEMORY

MT28F004B3 MT28F400B3
3V ONLY, DUAL SUPPLY SMART 3
• Seven erase blocks 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks
• Smart 3 technology B3 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE

MT28F400B3, 256K x 16/512K x 8
• Byte-wide READ and WRITE only

MT28F004B3, 512K x 8
• TSOP and SOP packaging options

Options
• Timing
• 80ns access
• Configurations
• 1 Meg x 8
• 512K x 16/1 Meg x 8
• Boot Block Starting Word Address
• Top 3FFFFh
• Bottom
• Operating Temperature Range
• Extended -40ºC to +85ºC
• Packages

MT28F004B3 Plastic 40-pin standard TSOP Type I Plastic 40-pin lead free TSOP Type I MT28F400B3 Plastic 48-pin standard TSOP Type I Plastic 48-pin lead free TSOP Type I Plastic 44-pin standard SOP Plastic 44-pin lead free SOP

Marking

MT28F004B3 MT28F400B3

VG VP

WG WP SG2 SP2

NOTE:

This generation of devices does not support 12V VPP production programming however, 5V VPP application production programming can be used with no loss of performance.

Contact Factory for availability
40-Pin TSOP Type I
48-Pin TSOP Type I
44-Pin SOP

The MT28F004B3 x8 and MT28F400B3 x16/x8 are nonvolatile, electrically block-erasable flash , programmable memory devices containing 4,194,304 bits organized as 262,144 words 16 bits or 524,288 bytes 8 bits . Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Refer to Micron’s Web site for the latest data sheet.

Part Number Example:

MT28F400B3SG-8 T
2003 Micron Technology, Inc. All rights reserved.

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
4Mb SMART 3 BOOT BLOCK FLASH MEMORY

Figure 1 Pin Assignment Top View
48-Pin TSOP Type I
44-Pin SOP

BYTE#

DQ15/ A-1

DQ14

DQ13

DQ12

DQ11

DQ10

ORDER NUMBER AND PART MARKING MT28F400B3WG-8 B MT28F400B3WP-8 B MT28F400B3WG-8 T MT28F400B3WP-8 T MT28F400B3WG-8 BET MT28F400B3WP-8 BET MT28F400B3WG-8 TET MT28F400B3WP-8 TET

VPP 1 WP# 2 A17 3

A7 4 A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 CE# 12 VSS 13 OE# 14 DQ0 15 DQ8 16 DQ1 17 DQ9 18 DQ2 19 DQ10 20 DQ3 21 DQ11 22

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT28F400B3WG-8B Datasheet file may be downloaded here without warranties.

Datasheet ID: MT28F400B3WG-8B 648358