MT18VDDT6472A 512MB1 MT18VDDT12872A 1GB
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MT18VDDT12872AY-40BJ1 (pdf) |
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MT18VDDT12872AG-40BJ1 |
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512MB, 1GB x72, ECC, DR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT18VDDT6472A 512MB1 MT18VDDT12872A 1GB For component data sheets, refer to Micron’s Web site: Draft 9/ 9/ 2008 • 184-pin, unbuffered dual in-line memory module UDIMM • Fast data transfer rates PC2100, PC2700, or PC3200 • 512MB 64 Meg x 72 and 1GB 128 Meg x 72 • Supports ECC error detection and correction • Vdd = VddQ = +2.5V -40B Vdd = VddQ = +2.6V • Vddspd = +2.3V to +3.6V • 2.5V I/O SSTL_2-compatible • Internal, pipelined double data rate DDR 2n-prefetch architecture • Bidirectional data strobe DQS transmitted/ received with is, source-synchronous data capture • Differential clock inputs CK and CK# • Multiple internal device banks for concurrent operation • Dual rank • Selectable burst lengths BL 2, 4, or 8 • Auto precharge option • Auto refresh and self refresh modes 7.8125µs maximum average periodic refresh interval • Serial presence-detect SPD with EEPROM • Selectable CAS latency CL for maximum compatibility • Gold edge contacts Figure 1 184-Pin UDIMM MO-206 R/C B PCB height 31.75mm 1.25in Options Marking • Operating temperature2 Commercial 0°C TA +70°C Industrial TA +85°C • Package None I 184-pin DIMM standard 184-pin DIMM Pb-free • Memory clock, speed, CAS latency 5.0ns 200 MHz , 400 MT/s, CL = -40B 6.0ns 167 MHz , 333 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL = -335 -262 -26A -265 Not recommended for new designs. Contact Micron for industrial temperature module offerings. Table 1: Speed Grade -40B -335 -262 -26A -265 Key Timing Parameters Industry Data Rate MT/s tRCD Nomenclature CL = 3 CL = 2 Notes PC3200 PC2700 PC2100 |
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