MT18HVF25672PZ-80EH1

MT18HVF25672PZ-80EH1 Datasheet


MT18HVF12872PZ 1GB MT18HVF25672PZ 2GB MT18HVF51272PZ 4GB

Part Datasheet
MT18HVF25672PZ-80EH1 MT18HVF25672PZ-80EH1 MT18HVF25672PZ-80EH1 (pdf)
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PDF Datasheet Preview
1GB, 2GB, 4GB x72, SR 240-Pin DDR2 SDRAM VLP RDIMM Features

DDR2 SDRAM VLP RDIMM

MT18HVF12872PZ 1GB MT18HVF25672PZ 2GB MT18HVF51272PZ 4GB
• 240-pin, registered very low profile, dual in-line memory module, ATCA form factor
• Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400
• 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , or 4GB 512 Meg x 72
• Supports ECC error detection and correction
• VDD = VDDQ = 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Halogen-free

Figure 1 240-Pin VLP RDIMM ATCA Form Factor

Module height 17.9mm in

Options
• Parity
• Operating temperature1

Commercial 0°C TA +70°C
• Package
240-pin DIMM halogen-free
• Frequency/CL2
2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667

Marking

None
-80E -800 -667

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency registered mode will add one clock cycle to CL.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E
More datasheets: DEM-5W1S-K126 | CXM-9-27-80-18-AC00-F2-2 | CXM-9-30-80-18-AC00-F2-2 | CXM-9-30-80-18-AC00-F2-3 | CXM-9-27-80-18-AC00-F2-3 | JWS60024/508 | JWS5024/508 | JWS7524/508 | JWS10024/508 | MT18HVF25672PZ-667H1


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Datasheet ID: MT18HVF25672PZ-80EH1 648331