MT18HTF12872PDY-40ED2

MT18HTF12872PDY-40ED2 Datasheet

MT18HTF6472 P D 512MB MT18HTF12872 P D 1GB MT18HTF25672 P D 2GB

Part	Datasheet
MT18HTF12872PDY-40ED2	MT18HTF12872PDY-40ED2 (pdf)

Related Parts	Information
MT18HTF6472DY-40EB2	MT18HTF6472DY-40EB2
MT18HTF25672DY-53EA1	MT18HTF25672DY-53EA1
MT18HTF25672DY-40EA1	MT18HTF25672DY-40EA1
MT18HTF6472DY-53EB2	MT18HTF6472DY-53EB2
MT18HTF12872DY-40EB1	MT18HTF12872DY-40EB1
MT18HTF12872DY-53EB1	MT18HTF12872DY-53EB1
MT18HTF25672PDY-53EA1	MT18HTF25672PDY-53EA1
MT18HTF25672PDY-40EA1	MT18HTF25672PDY-40EA1
MT18HTF12872DY-667D3	MT18HTF12872DY-667D3
MT18HTF12872PDY-667D2	MT18HTF12872PDY-667D2
MT18HTF12872DY-80ED3	MT18HTF12872DY-80ED3
MT18HTF12872PDY-80ED2	MT18HTF12872PDY-80ED2
MT18HTF25672DY-40ED1	MT18HTF25672DY-40ED1
MT18HTF25672DY-53ED1	MT18HTF25672DY-53ED1
MT18HTF12872DY-53ED3	MT18HTF12872DY-53ED3
MT18HTF12872DY-40ED3	MT18HTF12872DY-40ED3
MT18HTF6472PDY-40EB1	MT18HTF6472PDY-40EB1
MT18HTF12872PDY-53ED2	MT18HTF12872PDY-53ED2

PDF Datasheet Preview
512MB, 1GB, 2GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM RDIMM MT18HTF6472 P D 512MB MT18HTF12872 P D 1GB MT18HTF25672 P D 2GB For component data sheets, refer to Micron’s Web site: • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB 64 Meg x 72 , 1GB 128 Meg x 72 , 2GB 256 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Dual rank • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts Figure 1 240-Pin DIMM MO-237 R/C G PCB height 30mm 1.18in Options • Parity • Operating temperature1 Commercial 0°C TA +70°C Industrial TA +85°C • Package 240-pin DIMM Pb-free • Frequency/CAS latency2 2.5ns CL = 5 DDR2-800 3 2.5ns CL = 6 DDR2-800 3 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 30mm 1.18in Marking None I -80E -800 -667 -53E -40E Notes Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Not available in 512MB module density. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E -800 -667 -53E -40E PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

PDF Datasheet Preview

512MB, 1GB, 2GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features

DDR2 SDRAM Registered DIMM RDIMM

MT18HTF6472 P D 512MB MT18HTF12872 P D 1GB MT18HTF25672 P D 2GB

For component data sheets, refer to Micron’s Web site:
• 240-pin, registered dual in-line memory module
• Fast data transfer rates PC2-3200, PC2-4200,

PC2-5300, or PC2-6400
• 512MB 64 Meg x 72 , 1GB 128 Meg x 72 ,
2GB 256 Meg x 72
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Dual rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency CL
• Posted CAS# additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination ODT
• Serial presence-detect SPD with EEPROM
• Gold edge contacts

Figure 1 240-Pin DIMM MO-237 R/C G

PCB height 30mm 1.18in

Options
• Parity
• Operating temperature1

Commercial 0°C TA +70°C Industrial TA +85°C
• Package
240-pin DIMM Pb-free
• Frequency/CAS latency2
2.5ns CL = 5 DDR2-800 3 2.5ns CL = 6 DDR2-800 3
3.0ns CL = 5 DDR2-667
3.75ns CL = 4 DDR2-533
5.0ns CL = 3 DDR2-400
• PCB height
30mm 1.18in

Marking

None I
-80E -800 -667 -53E -40E

Notes Contact Micron for industrial temperature module offerings.

CL = CAS READ latency registered mode will add one clock cycle to CL.

Not available in 512MB module density.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E -800 -667 -53E -40E

PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT18HTF12872PDY-40ED2 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT18HTF12872PDY-40ED2 648326