MT18HTF25672PY-53EA1
MT18HTF25672PY-53EA1 Datasheet
MT18HTF6472 512MB MT18HTF12872 P 1GB MT18HTF25672 P 2GB
| Part | Datasheet |
|---|---|
MT18HTF25672PY-53EA1 |
MT18HTF25672PY-53EA1 (pdf) |
| Related Parts | Information |
|---|---|
MT18HTF6472Y-40EB2 |
MT18HTF6472Y-40EB2 |
MT18HTF12872Y-53EB3 |
MT18HTF12872Y-53EB3 |
MT18HTF12872Y-667B5 |
MT18HTF12872Y-667B5 |
MT18HTF12872Y-40EB3 |
MT18HTF12872Y-40EB3 |
MT18HTF25672Y-53EA2 |
MT18HTF25672Y-53EA2 |
MT18HTF12872Y-53ED2 |
MT18HTF12872Y-53ED2 |
MT18HTF25672PY-667A1 |
MT18HTF25672PY-667A1 |
MT18HTF6472Y-53EB2 |
MT18HTF6472Y-53EB2 |
MT18HTF25672Y-40EA2 |
MT18HTF25672Y-40EA2 |
MT18HTF25672Y-667A5 |
MT18HTF25672Y-667A5 |
MT18HTF12872PY-53ED1 |
MT18HTF12872PY-53ED1 |
MT18HTF12872PY-40ED1 |
MT18HTF12872PY-40ED1 |
MT18HTF25672Y-667A6 |
MT18HTF25672Y-667A6 |
MT18HTF25672PY-667A2 |
MT18HTF25672PY-667A2 |
MT18HTF25672PY-40EA2 |
MT18HTF25672PY-40EA2 |
MT18HTF25672PY-53EA2 |
MT18HTF25672PY-53EA2 |
MT18HTF12872Y-40ED5 |
MT18HTF12872Y-40ED5 |
MT18HTF25672Y-667D5 |
MT18HTF25672Y-667D5 |
MT18HTF12872PY-667D2 |
MT18HTF12872PY-667D2 |
MT18HTF12872Y-80ED6 |
MT18HTF12872Y-80ED6 |
MT18HTF12872Y-40ED6 |
MT18HTF12872Y-40ED6 |
MT18HTF12872PY-80ED2 |
MT18HTF12872PY-80ED2 |
MT18HTF12872PY-667B1 |
MT18HTF12872PY-667B1 |
MT18HTF12872Y-53ED6 |
MT18HTF12872Y-53ED6 |
MT18HTF25672Y-53ED2 |
MT18HTF25672Y-53ED2 |
MT18HTF25672PY-667D1 |
MT18HTF25672PY-667D1 |
MT18HTF12872PY-40ED2 |
MT18HTF12872PY-40ED2 |
MT18HTF12872PY-53ED2 |
MT18HTF12872PY-53ED2 |
MT18HTF25672PY-40EA1 |
MT18HTF25672PY-40EA1 |
MT18HTF12872Y-667D6 |
MT18HTF12872Y-667D6 |
MT18HTF25672PY-667E1 |
MT18HTF25672PY-667E1 |
MT18HTF25672Y-40ED2 |
MT18HTF25672Y-40ED2 |
| PDF Datasheet Preview |
|---|
| 512MB, 1GB, 2GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM RDIMM MT18HTF6472 512MB MT18HTF12872 P 1GB MT18HTF25672 P 2GB For component data sheets, refer to Micron's Web site: • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2- 5300, or PC2-6400 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Single rank • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts Figure 1: 240-Pin RDIMM MO-237 R/C R/C PCB height 30mm 1.18in Options • Parity3 • Operating temperature1 Commercial 0°C TA +70°C Industrial TA +85°C • Package 240-pin DIMM Pb-free • Frequency/CAS latency2 2.5ns = 5 DDR2-800 3 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 3 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 30mm 1.18in Marking None I -80E -800 -667 -53E -40E Notes Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Not available in 512MB density. Table 1 Key Timing Parameters Speed Grade -80E -800 -667 -53E -40E Industry Nomenclature PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 CL = 6 Data Rate MT/s CL = 5 800 667 CL = 4 533 400 CL = 3 tRCD ns tRP ns tRC ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. |
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