M29F800FB55M3F2 TR

M29F800FB55M3F2 TR Datasheet

M29FxxxFT/B Features

Part	Datasheet
M29F800FB55M3F2 TR	M29F800FB55M3F2 TR (pdf)

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M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B • Supply voltage VCC = 5V • Access time 55ns • Program/erase controller Embedded byte/word program algorithms • Erase suspend and resume modes • Low power consumption Standby and automatic standby • 100,000 PROGRAM/ERASE cycles per block • Electronic signature Manufacturer code 0x01h • Top device codes M29F200FT 0x2251 M29F400FT 0x2223 M29F800FT 0x22D6 M29F160FT 0x22D2 • Bottom device codes M29F200FB 0x2257 M29F400FB 0x22AB M29F800FB 0x2258 M29F160FB 0x22D8 • RoHS-compliant packages TSOP48 SO44 16Mb not available for this package • Automotive device grade 3 Temperature to +125°C • Automotive device grade 6 Temperature to +85°C • Automotive grade certified AEC-Q100 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. M29FxxxFT/B Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to For available options, such as packages, or for further information, contact your Micron sales representative. Part numbers can be verified at Feature and specification comparison by device type is available at Contact the factory for devices not found. Table 1 Part Number Information Part Number Category Device Type Density Technology Configuration Speed Package Temperature Range Shipping Options Fab Location Category Details M29F = 5V 200 = 2Mb 400 = 4Mb 800 = 8Mb 160 = 16Mb not available in SO 44 package F = 110nm T = Top boot B = Bottom boot 55 = 55ns device speed in conjunction with temperature range = 3, which denotes Auto Grade 40 to 125 °C parts 5A = 55ns access time Auto Grade only in conjunction with the Grade 6 option M = SO 44 N = TSOP 48 12mm x 20mm AL 42 6 = to +85°C 3 = to +125°C blank = standard packing Tray E = RoHS-compliant package, standard packing tray T = Tape and reel packing 24mm F = RoHS-compliant package, tape and reel packing 24mm 2 = Fab 13 Singapore Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Features Contents General Description 6 Signal Assignments 15 TSOP Pin Assignments 15 Small-Outline Pin Assignments 19 Signal Descriptions 22 Bus Operations 24 Read 24 Write 24 Output Disable 24 Standby 24 Automatic Standby 24 Command Interface 25 READ/RESET Command 25 AUTO SELECT Command 25 PROGRAM Command 26 UNLOCK BYPASS Command 26 UNLOCK BYPASS PROGRAM Command 27 UNLOCK BYPASS RESET Command 27 CHIP ERASE Command 27 BLOCK ERASE Command 27 ERASE SUSPEND Command 28 ERASE RESUME Command 28 READ CFI QUERY Command 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Features List of Figures Figure 1 Logic Diagram 6 Figure 2 Block Addresses, M29F160 x8 7 Figure 3 Block Addresses, M29F160 x16 8 Figure 4 Block Addresses, M29F800 x8 9 Figure 5 Block Addresses, M29F800 x16 10 Figure 6 Block Addresses, M29F400 x8 11 Figure 7 Block Addresses, M29F400 x16 12 Figure 8 Block Addresses, M29F200 x8 13 Figure 9 Block Addresses, M29F200 x16 14 Figure 10 M29F160F 15 Figure 11 M29F800F 16 Figure 12 M29F400F 17 Figure 13 M29F200F 18 Figure 14 M29F800 19 Figure 15 M29F400 20 Figure 16 M29F200 21 Figure 17 Block Protect Flowchart Programmer Equipment 32 Figure 18 Chip Unprotect Flowchart Programmer Equipment 33 Figure 19 Block Protect Flowchart In-System Equipment 34 Figure 20 Chip Protection Flowchart In-System Equipment 35 Figure 21 Data Polling Flowchart 37 Figure 22 Data Toggle Flowchart 38 Figure 23 AC Measurement I/O Waveform 44 Figure 24 AC Measurement Load Circuit 45 Figure 25 Read Mode AC Waveforms 47 Figure 26 Write AC Waveforms, Write Enable Controlled 49 Figure 27 Write AC Waveforms, Chip Enable Controlled 50 Figure 28 Reset/Block Temporary Unprotect AC Waveforms 51 Figure 29 48-Lead TSOP 12mm x 20mm 53 Figure 30 44-Lead Small-Outline 500 Mil 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Features List of Tables Table 1 Part Number Information 2 Table 2 Signal Descriptions 22 Table 3 Bus Operations 24 Table 4 Read Electronic Signature 26 Table 5 16-Bit Mode Commands BYTE# = HIGH 29 Table 6 8-Bit Mode Commands BYTE# = LOW 30 Table 7 Block and Chip Protection Signal Settings 31 Table 8 Status Register Bits 36 Table 9 Query Structure Overview 40 Table 10 CFI Query Identification String 40 Table 11 CFI Query System Interface Information 41 Table 12 Device Geometry Definition 41 Table 13 Primary Algorithm-Specific Extended Query Table 42 Table 14 Security Code Area 43 Table 15 Absolute Maximum Ratings 44 Table 16 Operating and AC Measurement Conditions 44 Table 17 Device Capacitance 45 Table 18 DC Characteristics 46 Table 19 Read AC Characteristics 47 Table 20 Write AC Characteristics, Write Enable Controlled 49 Table 21 Write AC Characteristics, Chip Enable Controlled 50 Table 22 Reset/Block Temporary Unprotect AC Characteristics 51 Table 23 Program/Erase Characteristics 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description This description applies specifically to the M29F 16Mb 2 Meg x 8 or 1 Meg x 16 nonvolatile memory device, but also applies to lower densities. The device enables READ, ERASE, and PROGRAM operations using a single, low-voltage supply. On power-up, the device defaults to read mode and can be read in the same way as a ROM or EPROM.

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M29FxxxFT/B Features

Micron Parallel NOR Flash Embedded Memory

Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B
• Supply voltage VCC = 5V
• Access time 55ns
• Program/erase controller

Embedded byte/word program algorithms
• Erase suspend and resume modes
• Low power consumption

Standby and automatic standby
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature

Manufacturer code 0x01h
• Top device codes

M29F200FT 0x2251 M29F400FT 0x2223 M29F800FT 0x22D6 M29F160FT 0x22D2
• Bottom device codes M29F200FB 0x2257 M29F400FB 0x22AB M29F800FB 0x2258 M29F160FB 0x22D8
• RoHS-compliant packages TSOP48 SO44 16Mb not available for this package
• Automotive device grade 3 Temperature to +125°C
• Automotive device grade 6 Temperature to +85°C
• Automotive grade certified AEC-Q100

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.

M29FxxxFT/B Features

Part Numbering Information

Devices are shipped from the factory with memory content bits erased to For available options, such as packages, or for further information, contact your Micron sales representative. Part numbers can be verified at Feature and specification comparison by device type is available at Contact the factory for devices not found.

Table 1 Part Number Information

Part Number Category

Device Type Density

Technology Configuration Speed

Package Temperature Range Shipping Options

Fab Location

Category Details M29F = 5V 200 = 2Mb 400 = 4Mb 800 = 8Mb 160 = 16Mb not available in SO 44 package F = 110nm T = Top boot B = Bottom boot 55 = 55ns device speed in conjunction with temperature range = 3, which denotes Auto Grade 40 to 125 °C parts 5A = 55ns access time Auto Grade only in conjunction with the Grade 6 option M = SO 44 N = TSOP 48 12mm x 20mm AL 42 6 = to +85°C 3 = to +125°C blank = standard packing Tray E = RoHS-compliant package, standard packing tray T = Tape and reel packing 24mm F = RoHS-compliant package, tape and reel packing 24mm 2 = Fab 13 Singapore

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M29FxxxFT/B Features

Contents

General Description 6 Signal Assignments 15

TSOP Pin Assignments 15 Small-Outline Pin Assignments 19 Signal Descriptions 22 Bus Operations 24 Read 24 Write 24 Output Disable 24 Standby 24 Automatic Standby 24 Command Interface 25 READ/RESET Command 25 AUTO SELECT Command 25 PROGRAM Command 26 UNLOCK BYPASS Command 26 UNLOCK BYPASS PROGRAM Command 27 UNLOCK BYPASS RESET Command 27 CHIP ERASE Command 27 BLOCK ERASE Command 27 ERASE SUSPEND Command 28 ERASE RESUME Command 28 READ CFI QUERY Command 28

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M29FxxxFT/B Features

List of Figures

Figure 1 Logic Diagram 6 Figure 2 Block Addresses, M29F160 x8 7 Figure 3 Block Addresses, M29F160 x16 8 Figure 4 Block Addresses, M29F800 x8 9 Figure 5 Block Addresses, M29F800 x16 10 Figure 6 Block Addresses, M29F400 x8 11 Figure 7 Block Addresses, M29F400 x16 12 Figure 8 Block Addresses, M29F200 x8 13 Figure 9 Block Addresses, M29F200 x16 14 Figure 10 M29F160F 15 Figure 11 M29F800F 16 Figure 12 M29F400F 17 Figure 13 M29F200F 18 Figure 14 M29F800 19 Figure 15 M29F400 20 Figure 16 M29F200 21 Figure 17 Block Protect Flowchart Programmer Equipment 32 Figure 18 Chip Unprotect Flowchart Programmer Equipment 33 Figure 19 Block Protect Flowchart In-System Equipment 34 Figure 20 Chip Protection Flowchart In-System Equipment 35 Figure 21 Data Polling Flowchart 37 Figure 22 Data Toggle Flowchart 38 Figure 23 AC Measurement I/O Waveform 44 Figure 24 AC Measurement Load Circuit 45 Figure 25 Read Mode AC Waveforms 47 Figure 26 Write AC Waveforms, Write Enable Controlled 49 Figure 27 Write AC Waveforms, Chip Enable Controlled 50 Figure 28 Reset/Block Temporary Unprotect AC Waveforms 51 Figure 29 48-Lead TSOP 12mm x 20mm 53 Figure 30 44-Lead Small-Outline 500 Mil 54

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M29FxxxFT/B Features

List of Tables

Table 1 Part Number Information 2 Table 2 Signal Descriptions 22 Table 3 Bus Operations 24 Table 4 Read Electronic Signature 26 Table 5 16-Bit Mode Commands BYTE# = HIGH 29 Table 6 8-Bit Mode Commands BYTE# = LOW 30 Table 7 Block and Chip Protection Signal Settings 31 Table 8 Status Register Bits 36 Table 9 Query Structure Overview 40 Table 10 CFI Query Identification String 40 Table 11 CFI Query System Interface Information 41 Table 12 Device Geometry Definition 41 Table 13 Primary Algorithm-Specific Extended Query Table 42 Table 14 Security Code Area 43 Table 15 Absolute Maximum Ratings 44 Table 16 Operating and AC Measurement Conditions 44 Table 17 Device Capacitance 45 Table 18 DC Characteristics 46 Table 19 Read AC Characteristics 47 Table 20 Write AC Characteristics, Write Enable Controlled 49 Table 21 Write AC Characteristics, Chip Enable Controlled 50 Table 22 Reset/Block Temporary Unprotect AC Characteristics 51 Table 23 Program/Erase Characteristics 52

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M29FxxxFT/B General Description

This description applies specifically to the M29F 16Mb 2 Meg x 8 or 1 Meg x 16 nonvolatile memory device, but also applies to lower densities. The device enables READ, ERASE, and PROGRAM operations using a single, low-voltage supply. On power-up, the device defaults to read mode and can be read in the same way as a ROM or EPROM.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived M29F800FB55M3F2TR Datasheet file may be downloaded here without warranties.

Datasheet ID: M29F800FB55M3F2TR 648290