M25P16S-VMN6P

M25P16S-VMN6P Datasheet

Micron M25P16 Serial Flash Embedded Memory Features

Part	Datasheet
M25P16S-VMN6P	M25P16S-VMN6P (pdf)

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PDF Datasheet Preview
Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory 16Mb, 3V • SPI bus compatible serial interface • 16Mb Flash memory • 75 MHz clock frequency maximum • 2.7V to 3.6V single supply voltage • Page program up to 256 bytes in 0.64ms TYP • Erase capability Sector erase 512Kb in s TYP Bulk erase 16Mb in 13 s TYP • Write protection Hardware write protection protected area size defined by non-volatile bits BP0, BP1, BP2 • Deep power down 1µA TYP • Electronic signature JEDEC standard 2-byte signature 2015h Unique ID code UID and 16 bytes of read-only data, available upon customer request RES command, one-byte signature 14h for backward compatibility • More than 100,000 write cycles per sector • More than 20 years data retention • Automotive grade parts available • Packages RoHS compliant SO8N MN 150 mils SO8W MW 208 mils SO16 MF 300 mils VFDFPN8 MP MLP8 6mm x 5mm VFDFPN8 ME MLP8 8mm x 6mm UFDFPN8 MC MLP8 4mm x 3mm Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Micron M25P16 Serial Flash Embedded Memory Features Contents Functional Description 6 Signal Descriptions 8 SPI Modes 9 Operating Features 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Features Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Features List of Figures Figure 1 Logic Diagram 6 Figure 2 Pin Connections SO8, VFQFPN , VDFPN 7 Figure 3 Pin Connections SO16 7 Figure 4 SPI Modes Supported 9 Figure 5 Bus Master and Memory Devices on the SPI Bus 10 Figure 6 Hold Condition Activation 13 Figure 7 Block Diagram 14 Figure 8 WRITE ENABLE Command Sequence 18 Figure 9 WRITE DISABLE Command Sequence 19 Figure 10 READ IDENTIFICATION Command Sequence 21 Figure 11 READ STATUS REGISTER Command Sequence 22 Figure 12 Status Register Format 22 Figure 13 WRITE STATUS REGISTER Command Sequence 24 Figure 14 READ DATA BYTES Command Sequence 26 Figure 15 READ DATA BYTES at HIGHER SPEED Command Sequence 27 Figure 16 PAGE PROGRAM Command Sequence 28 Figure 17 SECTOR ERASE Command Sequence 29 Figure 18 BULK ERASE Command Sequence 30 Figure 19 DEEP POWER-DOWN Command Sequence 31 Figure 20 RELEASE from DEEP POWER-DOWN Command Sequence 32 Figure 21 READ ELECTRONIC SIGNATURE Command Sequence 33 Figure 22 Power-Up Timing 35 Figure 23 AC Measurement I/O Waveform 39 Figure 24 Serial Input Timing 43 Figure 25 Write Protect Setup and Hold during WRSR when SRWD=1 Timing 43 Figure 26 Hold Timing 44 Figure 27 Output Timing 44 Figure 28 SO8N 150 mils Body Width 45 Figure 29 SO8W 208 mils Body Width 46 Figure 30 SO16W 300 mils Body Width 47 Figure 31 VFDFPN8 MLP8 6mm x 5mm 48 Figure 32 VFDFPN8 MLP8 8mm x 6mm 49 Figure 33 UFDFPN8 MLP8 4mm x 3mm 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Features List of Tables Table 1 Signal Names 6 Table 2 Signal Descriptions 8 Table 3 Protected Area Sizes 12 Table 4 Sectors 31:0 15 Table 5 Command Set Codes 17 Table 6 READ IDENTIFICATION Data Out Sequence 20 Table 7 Status Register Protection Modes 25 Table 8 Power-Up Timing and VWI Threshold 36 Table 9 Absolute Maximum Ratings 37 Table 10 Operating Conditions 37 Table 11 Data Retention and Endurance 37 Table 12 DC Current Specifications 38 Table 13 DC Voltage Specifications 38 Table 14 AC Measurement Conditions 39 Table 15 Capacitance 39 Table 16 AC Specifications 25 MHz, Device Grade 3, VCC[min]=2.7V 39 Table 17 Instruction Times 25 MHz, Device Grade 3, VCC[min]=2.7V 40 Table 18 AC Specifications 75 MHz, Device Grade 3 and 6, VCC[min]=2.7V 41 Table 19 Instruction Times 75 MHz, Device Grade 3 and 6, VCC[min]=2.7V 42 Table 20 Part Number Example 51 Table 21 Part Number Information Scheme 51 Table 22 Part Number Example 52 Table 23 Part Number Information Scheme 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Functional Description Functional Description The M25P16 is an 16Mb 2Mb x 8 serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus. The device supports high-performance commands for clock frequency up to 75MHz. The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM command. It is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Memory can be viewed either as 8,192 pages or as 2,097,152 bytes. The entire memory can be erased using the BULK ERASE command, or it can be erased one sector at a time using the SECTOR ERASE command. This datasheet details the functionality of the M25P16 device based on 110nm process. Figure 1 Logic Diagram DQ0 C S# W# HOLD# Table 1 Signal Names Signal Name C DQ0 DQ1 S# W# HOLD# VCC VSS Function Serial clock Serial data input Serial data output Chip select Write protect Hold Supply voltage Ground Direction Input Output Input Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Functional Description Figure 2 Pin Connections SO8, VFQFPN , VDFPN HOLD# Note: There is an exposed central pad on the underside of the MLP8 package that is pulled internally to VSS, and must not be connected to any other voltage or signal line on the PCB. The Package Mechanical section provides information on package dimensions and how to identify pin Figure 3 Pin Connections SO16 HOLD# W#/VPP Notes DU = Don't Use The Package Mechanical section provides information on package dimensions and how to identify pin Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Signal Descriptions Micron M25P16 Serial Flash Embedded Memory Signal Descriptions Table 2 Signal Descriptions Signal DQ1 DQ0 C S# HOLD# W# VCC VSS Type Output Input Input Micron M25P16 Serial Flash Embedded Memory Device Ordering Information Device Ordering Information Standard Parts Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron's part catalog search at micron.com. To compare features and specifications by device type, visit micron.com/products. Contact the factory for devices not found. For more information on how to identify products and top-side marking by the process identification letter, refer to technical note TN-12-24, "Serial Flash Memory Device Marking for the M25P, M25PE, M25PX, and N25Q Product Families." Table 20 Part Number Example Device Type Density M25P Security Features Operating Voltage Part Number Category Device Packing Package Grade Option Plating Technology Lithography Automotive Grade Table 21 Part Number Information Scheme Part Number Category Device type Density Security features Operating voltage Package Device Grade Packing Option Plating technology Lithography Category Details M25P = Serial Flash memory for code storage 16 = 16Mb 2 Meg x 8 = no extra security S = CFD programmed with UID V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width MW = SO8W 208 mils width MF = SO16W 300 mils width MP = VFDFPN8 6mm x 5mm MLP8 ME = VFDFPN8 8mm x 6mm MLP8 MC = UFDFPN8 4mm x 3mm MLP8 6 = Industrial temperature range to 85°C. Device tested with standard test flow. 3 = Automotive temperature range to 125°C. Device tested with high reliability test flow. = Standard packing tube for SO8N, SO8W, and SO16W packages tray for MLP packages T = Tape and reel packing P or G = RoHS compliant B = 110nm technology, Fab 13 diffusion plant Notes 1 2 3 4, 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Device Ordering Information Table 21 Part Number Information Scheme Continued Part Number Category Automotive Grade Category Details A = Automotive to 85°C part. Device tested with high reliability test flow. = Standard to 125°C. Notes Secure options are available upon customer request. Package is available only for products in the 110nm process technology. Not for new designs. Use the MP package for new designs. Micron recommends the use of the automotive grade device in the automotive environ- ment, autograde 6 and grade Device grade 3 is available in an SO8 RoHS compliant package. Note The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. Automotive Parts Table 22 Part Number Example Device Type Density M25P Security Features Operating Voltage Part Number Category Device Packing Package Grade Option Plating Technology Lithography Automotive Grade Table 23 Part Number Information Scheme Part Number Category Device type Density Security features Operating voltage Package Device Grade Packing Option Plating technology Lithography Category Details M25P = Serial Flash memory for code storage 16 = 8Mb 2 Meg x 8 = no extra security V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width MF = SO16W 300 mils width 6 = Industrial temperature range to 85°C. Device tested with high reliability test flow. 3 = Automotive temperature range to 125°C. Device tested with high reliability test flow. = Tube T = Tape and reel packing Y = Tray P = RoHS compliant B = 110nm technology, Fab 13 diffusion plant Notes 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Device Ordering Information Table 23 Part Number Information Scheme Continued Part Number Category Automotive Grade Category Details A = Automotive to 85°C part. Only with temperature grade Device tested with high reliability test flow. = Automotive to 125°C. Notes 1 Note Micron recommends the use of the automotive grade device in the automotive environment, autograde 6 and grade Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. • UID programmed for package UFDFPN8 4 x 3 • Updated note 1 in the Read Identification Data Out Sequence table • Removed part numbers from page 1 • Updated READ Identification in the Command Set Codes table to include 9Eh infor- mation • Updated SO8W 208 mils Body Width drawing • Updated Device Ordering Information section • Updated Command Set to include RELEASE FROM DEEP POWER-DOWN • Updated Memory Map to eliminate the 64KB block box • In Signal Names table, changed direction column for DQ0 and DQ1 to input and output respectively • Updated address range in Memory Map • Corrected error in SO8N package drawing. • Updated packing options in the Part Number Information Scheme table in Device Or- dering Information Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved. • Applied Micron brand 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel 208-368-4000 Sales inquiries 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization some- times occur. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

PDF Datasheet Preview

Micron M25P16 Serial Flash Embedded Memory Features

Micron M25P16 Serial Flash Embedded Memory
16Mb, 3V
• SPI bus compatible serial interface
• 16Mb Flash memory
• 75 MHz clock frequency maximum
• 2.7V to 3.6V single supply voltage
• Page program up to 256 bytes in 0.64ms TYP
• Erase capability

Sector erase 512Kb in s TYP Bulk erase 16Mb in 13 s TYP
• Write protection Hardware write protection protected area size
defined by non-volatile bits BP0, BP1, BP2
• Deep power down 1µA TYP
• Electronic signature JEDEC standard 2-byte signature 2015h Unique ID code UID and 16 bytes of read-only data, available upon customer request RES command, one-byte signature 14h for backward compatibility
• More than 100,000 write cycles per sector
• More than 20 years data retention
• Automotive grade parts available
• Packages RoHS compliant

SO8N MN 150 mils SO8W MW 208 mils SO16 MF 300 mils VFDFPN8 MP MLP8 6mm x 5mm VFDFPN8 ME MLP8 8mm x 6mm UFDFPN8 MC MLP8 4mm x 3mm

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.

Micron M25P16 Serial Flash Embedded Memory Features

Contents

Functional Description 6 Signal Descriptions 8 SPI Modes 9 Operating Features 11
Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Micron M25P16 Serial Flash Embedded Memory Features

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Micron M25P16 Serial Flash Embedded Memory Features

List of Figures

Figure 1 Logic Diagram 6 Figure 2 Pin Connections SO8, VFQFPN , VDFPN 7 Figure 3 Pin Connections SO16 7 Figure 4 SPI Modes Supported 9 Figure 5 Bus Master and Memory Devices on the SPI Bus 10 Figure 6 Hold Condition Activation 13 Figure 7 Block Diagram 14 Figure 8 WRITE ENABLE Command Sequence 18 Figure 9 WRITE DISABLE Command Sequence 19 Figure 10 READ IDENTIFICATION Command Sequence 21 Figure 11 READ STATUS REGISTER Command Sequence 22 Figure 12 Status Register Format 22 Figure 13 WRITE STATUS REGISTER Command Sequence 24 Figure 14 READ DATA BYTES Command Sequence 26 Figure 15 READ DATA BYTES at HIGHER SPEED Command Sequence 27 Figure 16 PAGE PROGRAM Command Sequence 28 Figure 17 SECTOR ERASE Command Sequence 29 Figure 18 BULK ERASE Command Sequence 30 Figure 19 DEEP POWER-DOWN Command Sequence 31 Figure 20 RELEASE from DEEP POWER-DOWN Command Sequence 32 Figure 21 READ ELECTRONIC SIGNATURE Command Sequence 33 Figure 22 Power-Up Timing 35 Figure 23 AC Measurement I/O Waveform 39 Figure 24 Serial Input Timing 43 Figure 25 Write Protect Setup and Hold during WRSR when SRWD=1 Timing 43 Figure 26 Hold Timing 44 Figure 27 Output Timing 44 Figure 28 SO8N 150 mils Body Width 45 Figure 29 SO8W 208 mils Body Width 46 Figure 30 SO16W 300 mils Body Width 47 Figure 31 VFDFPN8 MLP8 6mm x 5mm 48 Figure 32 VFDFPN8 MLP8 8mm x 6mm 49 Figure 33 UFDFPN8 MLP8 4mm x 3mm 50

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Micron M25P16 Serial Flash Embedded Memory Features

List of Tables

Table 1 Signal Names 6 Table 2 Signal Descriptions 8 Table 3 Protected Area Sizes 12 Table 4 Sectors 31:0 15 Table 5 Command Set Codes 17 Table 6 READ IDENTIFICATION Data Out Sequence 20 Table 7 Status Register Protection Modes 25 Table 8 Power-Up Timing and VWI Threshold 36 Table 9 Absolute Maximum Ratings 37 Table 10 Operating Conditions 37 Table 11 Data Retention and Endurance 37 Table 12 DC Current Specifications 38 Table 13 DC Voltage Specifications 38 Table 14 AC Measurement Conditions 39 Table 15 Capacitance 39 Table 16 AC Specifications 25 MHz, Device Grade 3, VCC[min]=2.7V 39 Table 17 Instruction Times 25 MHz, Device Grade 3, VCC[min]=2.7V 40 Table 18 AC Specifications 75 MHz, Device Grade 3 and 6, VCC[min]=2.7V 41 Table 19 Instruction Times 75 MHz, Device Grade 3 and 6, VCC[min]=2.7V 42 Table 20 Part Number Example 51 Table 21 Part Number Information Scheme 51 Table 22 Part Number Example 52 Table 23 Part Number Information Scheme 52

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Micron M25P16 Serial Flash Embedded Memory Functional Description

Functional Description

The M25P16 is an 16Mb 2Mb x 8 serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus. The device supports high-performance commands for clock frequency up to 75MHz. The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM command. It is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Memory can be viewed either as 8,192 pages or as 2,097,152 bytes. The entire memory can be erased using the BULK ERASE command, or it can be erased one sector at a time using the SECTOR ERASE command. This datasheet details the functionality of the M25P16 device based on 110nm process.

Figure 1 Logic Diagram

DQ0 C S#

W# HOLD#

Table 1 Signal Names

Signal Name C DQ0 DQ1 S# W# HOLD# VCC VSS

Function Serial clock Serial data input Serial data output Chip select Write protect Hold Supply voltage Ground

Direction Input Output Input

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Micron M25P16 Serial Flash Embedded Memory Functional Description

Figure 2 Pin Connections SO8, VFQFPN , VDFPN

HOLD#

Note:

There is an exposed central pad on the underside of the MLP8 package that is pulled internally to VSS, and must not be connected to any other voltage or signal line on the PCB. The Package Mechanical section provides information on package dimensions and how to identify pin

Figure 3 Pin Connections SO16

HOLD#

W#/VPP

Notes DU = Don't Use

The Package Mechanical section provides information on package dimensions and how to identify pin

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Signal Descriptions

Micron M25P16 Serial Flash Embedded Memory Signal Descriptions

Table 2 Signal Descriptions

Signal DQ1 DQ0 C S#

HOLD#

W# VCC VSS

Type Output Input

Input
Micron M25P16 Serial Flash Embedded Memory Device Ordering Information
Device Ordering Information

Standard Parts

Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron's part catalog search at micron.com. To compare features and specifications by device type, visit micron.com/products. Contact the factory for devices not found.

For more information on how to identify products and top-side marking by the process identification letter, refer to technical note TN-12-24, "Serial Flash Memory Device Marking for the M25P, M25PE, M25PX, and N25Q Product Families."

Table 20 Part Number Example

Device Type Density

M25P

Security Features

Operating Voltage

Part Number Category

Device Packing Package Grade Option

Plating Technology Lithography

Automotive Grade

Table 21 Part Number Information Scheme

Part Number Category

Device type Density Security features Operating voltage Package

Device Grade

Packing Option

Plating technology Lithography

Category Details M25P = Serial Flash memory for code storage 16 = 16Mb 2 Meg x 8 = no extra security S = CFD programmed with UID V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width MW = SO8W 208 mils width MF = SO16W 300 mils width MP = VFDFPN8 6mm x 5mm MLP8 ME = VFDFPN8 8mm x 6mm MLP8 MC = UFDFPN8 4mm x 3mm MLP8 6 = Industrial temperature range to 85°C. Device tested with standard test flow. 3 = Automotive temperature range to 125°C. Device tested with high reliability test flow. = Standard packing tube for SO8N, SO8W, and SO16W packages tray for MLP packages T = Tape and reel packing P or G = RoHS compliant B = 110nm technology, Fab 13 diffusion plant

Notes 1 2
3 4, 5

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.
Micron M25P16 Serial Flash Embedded Memory Device Ordering Information

Table 21 Part Number Information Scheme Continued

Part Number Category

Automotive Grade

Category Details A = Automotive to 85°C part. Device tested with high reliability test flow. = Standard to 125°C.

Notes

Secure options are available upon customer request. Package is available only for products in the 110nm process technology. Not for new designs. Use the MP package for new designs. Micron recommends the use of the automotive grade device in the automotive environ-
ment, autograde 6 and grade Device grade 3 is available in an SO8 RoHS compliant package.

Note The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.

Automotive Parts

Table 22 Part Number Example

Device Type Density

M25P

Security Features

Operating Voltage

Part Number Category

Device Packing Package Grade Option

Plating Technology Lithography

Automotive Grade

Table 23 Part Number Information Scheme

Part Number Category

Device type Density Security features Operating voltage Package

Device Grade

Packing Option

Plating technology Lithography

Category Details M25P = Serial Flash memory for code storage 16 = 8Mb 2 Meg x 8 = no extra security V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width MF = SO16W 300 mils width 6 = Industrial temperature range to 85°C. Device tested with high reliability test flow. 3 = Automotive temperature range to 125°C. Device tested with high reliability test flow. = Tube T = Tape and reel packing Y = Tray P = RoHS compliant B = 110nm technology, Fab 13 diffusion plant

Notes 1

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.
Micron M25P16 Serial Flash Embedded Memory Device Ordering Information

Table 23 Part Number Information Scheme Continued

Part Number Category

Automotive Grade

Category Details

A = Automotive to 85°C part. Only with temperature grade Device tested with high reliability test flow.
= Automotive to 125°C.

Notes 1

Note Micron recommends the use of the automotive grade device in the automotive environment, autograde 6 and grade

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.
• UID programmed for package UFDFPN8 4 x 3
• Updated note 1 in the Read Identification Data Out Sequence table
• Removed part numbers from page 1
• Updated READ Identification in the Command Set Codes table to include 9Eh infor-
mation
• Updated SO8W 208 mils Body Width drawing
• Updated Device Ordering Information section
• Updated Command Set to include RELEASE FROM DEEP POWER-DOWN
• Updated Memory Map to eliminate the 64KB block box
• In Signal Names table, changed direction column for DQ0 and DQ1 to input and output respectively
• Updated address range in Memory Map
• Corrected error in SO8N package drawing.
• Updated packing options in the Part Number Information Scheme table in Device Or-
dering Information

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.
• Applied Micron brand
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel 208-368-4000 Sales inquiries 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2011 Micron Technology, Inc. All rights reserved.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived M25P16S-VMN6P Datasheet file may be downloaded here without warranties.

Datasheet ID: M25P16S-VMN6P 648282