PC28F00AM29EWLD

PC28F00AM29EWLD Datasheet

JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx

Part	Datasheet
PC28F00AM29EWLD	PC28F00AM29EWLD (pdf)

Related Parts	Information
PC28F00AM29EWHB TR	PC28F00AM29EWHB TR

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256Mb, 512Mb, 1Gb, 2Gb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx • 2Gb = stacked device two 1Gb die • Supply voltage VCC = program, erase, read VCCQ = I/O buffers • Asynchronous random/page read Page size 16 words or 32 bytes Page access 25ns Random access 100ns Fortified BGA ; 110ns TSOP • Buffer program 512-word program buffer • Program time 0.88µs per byte MB/s TYP when using full 512-word buffer size in buffer program • Memory organization Uniform blocks 128-Kbytes or 64-Kwords each • Program/erase controller Embedded byte/word program algorithms • Program/erase suspend and resume capability Read from any block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation • BLANK CHECK operation to verify an erased block • Unlock bypass, block erase, chip erase, and write to buffer capability Fast buffered/batch programming Fast block/chip erase • VPP/WP# pin protection Protects first or last block regardless of block protection settings • Software protection Volatile protection Nonvolatile protection Password protection Password access • Extended memory block 128-word 256-byte block for permanent, secure identification Programmed or locked at the factory or by the customer • Low power consumption Standby mode • JESD47H-compliant 100,000 minimum ERASE cycles per block Data retention 20 years TYP • 65nm multilevel cell MLC process technology • Fortified BGA and TSOP packages • Green packages available RoHS-compliant Halogen-free • Operating temperature Ambient to +85°C Micron Technology, Inc. reserves the right to change products or specifications without notice. 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256Mb, 512Mb, 1Gb, 2Gb 3V Embedded Parallel NOR Flash Features Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at Feature and specification comparison by device type is available at Contact the factory for devices not found. Table 1 Part Number Information Part Number Category Package Product designator Density Device type Device function Features Category Details JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant RC = 64-ball Fortified BGA, 11mm x 13mm, leaded 28F = NOR parallel interface 256 = 256Mb 512 = 512Mb 00A = 1Gb 00B = 2Gb M29EW = Embedded Flash memory 3V core, page, uniform block H = Highest block protected by VPP/WP# L = Lowest block protected by VPP/WP# A/B/D/E or an asterisk * = Combination of features, including packing media, special features, and specific customer request information Note For 2Gb device, H also indicates protection of the lowest block by VPP/WP#. Notes 1 Table 2 Standard Part Numbers by Density, Medium, and Package Density 256Mb Medium Tray Tape and Reel 512Mb Tray Tape and Reel Tray Tape and Reel Tray JS JS28F256M29EWHA JS28F256M29EWLA JS28F256M29EWHB JS28F256M29EWLB JS28F512M29EWHA JS28F512M29EWLA JS28F512M29EWHB JS28F512M29EWLB JS28F00AM29EWHA JS28F00AM29EWLA JS28F00AM29EWHB

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256Mb, 512Mb, 1Gb, 2Gb 3V Embedded Parallel NOR Flash Features

Parallel NOR Flash Embedded Memory

JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx
• 2Gb = stacked device two 1Gb die
• Supply voltage

VCC = program, erase, read VCCQ = I/O buffers
• Asynchronous random/page read Page size 16 words or 32 bytes Page access 25ns Random access 100ns Fortified BGA ;
110ns TSOP
• Buffer program 512-word program buffer
• Program time
0.88µs per byte MB/s TYP when using full 512-word buffer size in buffer program
• Memory organization Uniform blocks 128-Kbytes or 64-Kwords each
• Program/erase controller Embedded byte/word program algorithms
• Program/erase suspend and resume capability Read from any block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability Fast buffered/batch programming Fast block/chip erase
• VPP/WP# pin protection Protects first or last block regardless of block protection settings
• Software protection Volatile protection Nonvolatile protection Password protection Password access
• Extended memory block 128-word 256-byte block for permanent, secure identification Programmed or locked at the factory or by the customer
• Low power consumption Standby mode
• JESD47H-compliant
100,000 minimum ERASE cycles per block Data retention 20 years TYP
• 65nm multilevel cell MLC process technology
• Fortified BGA and TSOP packages
• Green packages available RoHS-compliant Halogen-free
• Operating temperature Ambient to +85°C

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2012 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
256Mb, 512Mb, 1Gb, 2Gb 3V Embedded Parallel NOR Flash Features

Part Numbering Information

Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at Feature and specification comparison by device type is available at Contact the factory for devices not found.

Table 1 Part Number Information

Part Number Category

Package

Product designator Density

Device type Device function Features

Category Details JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant RC = 64-ball Fortified BGA, 11mm x 13mm, leaded 28F = NOR parallel interface 256 = 256Mb 512 = 512Mb 00A = 1Gb 00B = 2Gb M29EW = Embedded Flash memory 3V core, page, uniform block H = Highest block protected by VPP/WP# L = Lowest block protected by VPP/WP# A/B/D/E or an asterisk * = Combination of features, including packing media, special features, and specific customer request information

Note For 2Gb device, H also indicates protection of the lowest block by VPP/WP#.

Notes 1

Table 2 Standard Part Numbers by Density, Medium, and Package

Density 256Mb

Medium Tray

Tape and Reel
512Mb

Tray

Tape and Reel

Tray

Tape and Reel

Tray

JS JS28F256M29EWHA JS28F256M29EWLA JS28F256M29EWHB JS28F256M29EWLB JS28F512M29EWHA JS28F512M29EWLA JS28F512M29EWHB JS28F512M29EWLB JS28F00AM29EWHA JS28F00AM29EWLA JS28F00AM29EWHB

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PC28F00AM29EWLD Datasheet file may be downloaded here without warranties.

Datasheet ID: PC28F00AM29EWLD 648277