SST38VF6404B-70-5I-EKE-T

SST38VF6404B-70-5I-EKE-T Datasheet

SST38VF6401B / SST38VF6402B

Part	Datasheet
SST38VF6404B-70-5I-EKE-T	SST38VF6404B-70-5I-EKE-T (pdf)

Related Parts	Information
SST38VF6402B-70-5I-EKE-T	SST38VF6402B-70-5I-EKE-T
SST38VF6401B-70-5I-B3KE	SST38VF6401B-70-5I-B3KE
SST38VF6404B-70-5I-B3KE-T	SST38VF6404B-70-5I-B3KE-T
SST38VF6404B-70-5I-EKE	SST38VF6404B-70-5I-EKE
SST38VF6404B-70-5I-B3KE	SST38VF6404B-70-5I-B3KE
SST38VF6401B-70-5I-B3KE-T	SST38VF6401B-70-5I-B3KE-T
SST38VF6403B-70-5I-EKE	SST38VF6403B-70-5I-EKE
SST38VF6403B-70-5I-B3KE	SST38VF6403B-70-5I-B3KE
SST38VF6402B-70-5I-EKE	SST38VF6402B-70-5I-EKE
SST38VF6403B-70-5I-B3KE-T	SST38VF6403B-70-5I-B3KE-T
SST38VF6401B-70-5I-EKE	SST38VF6401B-70-5I-EKE
SST38VF6402B-70-5I-B3KE-T	SST38VF6402B-70-5I-B3KE-T
SST38VF6402B-70-5I-B3KE	SST38VF6402B-70-5I-B3KE
SST38VF6401B-70-5I-EKE-T	SST38VF6401B-70-5I-EKE-T
SST38VF6403B-70-5I-EKE-T	SST38VF6403B-70-5I-EKE-T

PDF Datasheet Preview
64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B A Microchip Technology Company SST38VF6403B / SST38VF6404B Preliminary Specification The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced MultiPurpose Flash Plus Advanced MPF+ devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write Program or Erase with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. • Organized as 4M x16 • Single Voltage Read and Write Operations 2.7-3.6V • Superior Reliability Endurance 100,000 Cycles minimum Greater than 100 years Data Retention • Low Power Consumption typical values at 5 MHz Active Current 25 mA typical Standby Current 5 µA typical Auto Low Power Mode 5 µA typical • 128-bit Unique ID • Security-ID Feature 248 Word, user One-Time-Programmable • Protection and Security Features Hardware Boot Block Protection/WP# Input Pin, Uniform 32 KWord and Non-Uniform 8 KWord options available User-controlled individual block 32 KWord protection, using software only methods Password protection • Hardware Reset Pin RST# • Fast Read and Page Read Access Times 70 ns Read access time 25 ns Page Read access times - 8-Word Page Read buffer • Latched Address and Data • Fast Erase Times Block-Erase Time 18 ms typical Chip-Erase Time 40 ms typical • Erase-Suspend/-Resume Capabilities • Fast Word and Write-Buffer Programming Times Word-Program Time 7 µs typical Write Buffer Programming Time µs / Word typical - 16-Word Write Buffer • Automatic Write Timing Internal VPP Generation • End-of-Write Detection Toggle Bits Data# Polling RY/BY# Output • CMOS I/O Compatibility • JEDEC Standard Flash EEPROM Pinouts and command sets • CFI Compliant • Packages Available 48-lead TSOP 48-ball TFBGA • All non-Pb lead-free devices are RoHS compliant 2011 Silicon Storage Technology, Inc. DS25002A 08/11 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B A Microchip Technology Company SST38VF6403B / SST38VF6404B Product Description Preliminary Specification The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus Advanced MPF+ manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write Program or Erase with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST38VF6401B/6402B/6403B/6404B provide a typical Word-Program time of 7 µsec. For faster word-programming performance, the Write-Buffer Programming feature, has a typical word-program time of µsec. These devices use Toggle Bit, Data# Polling, or the RY/BY# pin to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices provide a Page-Read feature that enables a faster word read time of 25 ns, eight words on the same page. To protect against inadvertent write, the SST38VF6401B/6402B/6403B/6404B have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are available with 100,000 cycles minimum endurance. Data retention is rated at greater than 100 years. The SST38VF6401B/6402B/6403B/6404B are suited for applications that require the convenient and economical updating of program, configuration, or data memory. For all system applications, Advanced MPF+ significantly improve performance and reliability, while lowering power consumption. These devices inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. For any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time therefore, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. The SST38VF6401B/6402B/6403B/6404B also offer flexible data protection features. Applications that require memory protection from program and erase operations can use the Boot Block, Individual Block Protection, and Advanced Protection features. For applications that require a permanent solution, the Irreversible Block Locking feature provides permanent protection for memory blocks. Product Ordering Information Preliminary Specification SST 38 VF 6401B - 70 - 5I - B3KE XX XXXX - XX - XX - XXXX Environmental Attribute E1 = non-Pb Package Modifier K = 48 balls or leads Package Type E = TSOP type1, die up, 12mm x 20mm B3 = TFBGA 6mm x 8mm, 0.8mm pitch Temperature Range I = Industrial = -40°C to +85°C Minimum Endurance 5 = 100,000 cycles Read Access Speed 70 = 70 ns Hardware Block Protection 1 = Bottom Boot-Block Uniform 32 KWord 2 = Top Boot-Block Uniform 32 KWord 3 = Bottom Boot-Block Non-Uniform 8 KWord 4 = Top Boot-Block Non-Uniform 8 KWord Device Density 640 = 64 Mbit Voltage V = 2.7-3.6V Product Series 38 = Advanced Multi-Purpose Flash Plus Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. 2011 Silicon Storage Technology, Inc. DS25002A 08/11 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B A Microchip Technology Company SST38VF6403B / SST38VF6404B Valid Combinations Preliminary Specification Valid Combinations for SST38VF6401B SST38VF6401B-70-5I-EKE SST38VF6401B-70-5I-B3KE Valid Combinations for SST38VF6402B SST38VF6402B-70-5I-EKE SST38VF6402B-70-5I-B3KE Valid Combinations for SST38VF6403B SST38VF6403B-70-5I-EKE SST38VF6403B-70-5I-B3KE Valid Combinations for SST38VF6404B SST38VF6404B-70-5I-EKE SST38VF6404B-70-5I-B3KE Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. 2011 Silicon Storage Technology, Inc. DS25002A 08/11 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B A Microchip Technology Company SST38VF6403B / SST38VF6404B Packaging Diagrams

PDF Datasheet Preview

64 Mbit x16 Advanced Multi-Purpose Flash Plus

SST38VF6401B / SST38VF6402B

A Microchip Technology Company

SST38VF6403B / SST38VF6404B

Preliminary Specification

The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced MultiPurpose Flash Plus Advanced MPF+ devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write Program or Erase with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.
• Organized as 4M x16
• Single Voltage Read and Write Operations 2.7-3.6V
• Superior Reliability Endurance 100,000 Cycles minimum Greater than 100 years Data Retention
• Low Power Consumption typical values at 5 MHz Active Current 25 mA typical Standby Current 5 µA typical Auto Low Power Mode 5 µA typical
• 128-bit Unique ID
• Security-ID Feature 248 Word, user One-Time-Programmable
• Protection and Security Features Hardware Boot Block Protection/WP# Input Pin, Uniform 32 KWord and Non-Uniform 8 KWord options available User-controlled individual block 32 KWord protection, using software only methods Password protection
• Hardware Reset Pin RST#
• Fast Read and Page Read Access Times 70 ns Read access time 25 ns Page Read access times - 8-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times Block-Erase Time 18 ms typical Chip-Erase Time 40 ms typical
• Erase-Suspend/-Resume Capabilities
• Fast Word and Write-Buffer Programming Times Word-Program Time 7 µs typical Write Buffer Programming Time µs / Word typical - 16-Word Write Buffer
• Automatic Write Timing Internal VPP Generation
• End-of-Write Detection Toggle Bits Data# Polling RY/BY# Output
• CMOS I/O Compatibility
• JEDEC Standard Flash EEPROM Pinouts and command sets
• CFI Compliant
• Packages Available 48-lead TSOP 48-ball TFBGA
• All non-Pb lead-free devices are RoHS compliant
2011 Silicon Storage Technology, Inc.

DS25002A
08/11
64 Mbit x16 Advanced Multi-Purpose Flash Plus

SST38VF6401B / SST38VF6402B

A Microchip Technology Company

SST38VF6403B / SST38VF6404B

Product Description

Preliminary Specification

The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus Advanced MPF+ manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write Program or Erase with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories.

Featuring high performance Word-Program, the SST38VF6401B/6402B/6403B/6404B provide a typical Word-Program time of 7 µsec. For faster word-programming performance, the Write-Buffer Programming feature, has a typical word-program time of µsec. These devices use Toggle Bit, Data# Polling, or the RY/BY# pin to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices provide a Page-Read feature that enables a faster word read time of 25 ns, eight words on the same page.

To protect against inadvertent write, the SST38VF6401B/6402B/6403B/6404B have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are available with 100,000 cycles minimum endurance. Data retention is rated at greater than 100 years.

The SST38VF6401B/6402B/6403B/6404B are suited for applications that require the convenient and economical updating of program, configuration, or data memory. For all system applications, Advanced MPF+ significantly improve performance and reliability, while lowering power consumption. These devices inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. For any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time therefore, the total energy consumed during any Erase or Program operation is less than alternative flash technologies.

These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

The SST38VF6401B/6402B/6403B/6404B also offer flexible data protection features. Applications that require memory protection from program and erase operations can use the Boot Block, Individual Block Protection, and Advanced Protection features. For applications that require a permanent solution, the Irreversible Block Locking feature provides permanent protection for memory blocks.
Product Ordering Information

Preliminary Specification

SST 38 VF 6401B - 70 - 5I - B3KE

XX XXXX - XX - XX - XXXX

Environmental Attribute E1 = non-Pb

Package Modifier K = 48 balls or leads

Package Type E = TSOP type1, die up, 12mm x 20mm B3 = TFBGA 6mm x 8mm, 0.8mm pitch

Temperature Range I = Industrial = -40°C to +85°C

Minimum Endurance 5 = 100,000 cycles

Read Access Speed 70 = 70 ns

Hardware Block Protection 1 = Bottom Boot-Block Uniform 32 KWord 2 = Top Boot-Block Uniform 32 KWord 3 = Bottom Boot-Block Non-Uniform 8 KWord 4 = Top Boot-Block Non-Uniform 8 KWord

Device Density 640 = 64 Mbit

Voltage V = 2.7-3.6V

Product Series 38 = Advanced Multi-Purpose Flash Plus

Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”.
2011 Silicon Storage Technology, Inc.

DS25002A
08/11
64 Mbit x16 Advanced Multi-Purpose Flash Plus

SST38VF6401B / SST38VF6402B

A Microchip Technology Company

SST38VF6403B / SST38VF6404B

Valid Combinations

Preliminary Specification

Valid Combinations for SST38VF6401B

SST38VF6401B-70-5I-EKE SST38VF6401B-70-5I-B3KE

Valid Combinations for SST38VF6402B

SST38VF6402B-70-5I-EKE SST38VF6402B-70-5I-B3KE

Valid Combinations for SST38VF6403B

SST38VF6403B-70-5I-EKE SST38VF6403B-70-5I-B3KE

Valid Combinations for SST38VF6404B

SST38VF6404B-70-5I-EKE SST38VF6404B-70-5I-B3KE Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST
sales representative to confirm availability of valid combinations and to determine availability of new combinations.
2011 Silicon Storage Technology, Inc.

DS25002A
08/11
64 Mbit x16 Advanced Multi-Purpose Flash Plus

SST38VF6401B / SST38VF6402B

A Microchip Technology Company

SST38VF6403B / SST38VF6404B

Packaging Diagrams

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SST38VF6404B-70-5I-EKE-T Datasheet file may be downloaded here without warranties.

Datasheet ID: SST38VF6404B-70-5I-EKE-T 648210