T2526N038-6AQ

T2526N038-6AQ Datasheet

The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram of Figure The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier CGA the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the choosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present enviromental conditions ambient light, modulated lamps etc. . Other special features are used to adapt to the current application to secure best transmission quality. The T2526 operates in a supply-voltage range from V to V. By default, the T2526 is optimized for best performance within V to V.

Part	Datasheet
T2526N038-6AQ	T2526N038-6AQ (pdf)

PDF Datasheet Preview
• No External Components Except PIN Diode • Supply-voltage Range V to V • Automatic Sensitivity Adaptation AGC • Automatic Strong Signal Adaptation ATC • Automatic Supply Voltage Adaptation • Enhanced Immunity against Ambient Light Disturbances • Available for Carrier Frequencies between 30 kHz to 76 kHz adjusted by Zener-Diode Fusing • TTL and CMOS Compatible • Audio Video Applications • Home Appliances • Remote Control Equipment Low-voltage IR Receiver ASSP The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram of Figure The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier CGA the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the choosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present enviromental conditions ambient light, modulated lamps etc. . Other special features are used to adapt to the current application to secure best transmission quality. The T2526 operates in a supply-voltage range from V to V. By default, the T2526 is optimized for best performance within V to V. Figure Block Diagram T2526 IN Input CGA and filter Demodulator OUT Microcontroller Oscillator Carrier frequency f0 T2526 Modulated IR signal min 6 or 10 pulses AGC/ATC and digital control Pin Configuration Figure Pinning SO8 and TSSOP8 OUT 3 Pin Description Function Supply voltage Not connected Data output Not connected Input PIN-diode Ground Not connected Not connected 8 NC 7 NC 6 GND 5 IN Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Value Unit Supply voltage Supply current Input voltage to VS Input DC current at VS = 5 V Output voltage to VS Output current Operating temperature Tamb -25 to +85 Storage temperature Tstg -40 to +125 Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage Electrical Characteristics, 3-V Operation Continued Tamb = 25°C, VS = 3 V unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 4 Controlled Amplifier and Filter Maximum value of variable gain CGA GVARMAX Minimum value of variable gain CGA GVARMIN Total internal amplification 3 GMAX Center frequency fusing accuracy of bandpass VS = 3 V, Tamb = 25°C f03V_FUSE Overall accuracy center frequency of bandpass f03V Overall accuracy center frequency of bandpass Tamb = 0 to 70°C f03V BPF bandwidth -3 dB f0 = 38 kHz; See Figure 9 on page 8 * Type means A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage Electrical Characteristics, 5-V Operation Tamb = 25°C, VS = 5 V unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 5 Supply Supply-voltage range Supply current 6 Output IIN =0 Internal pull-up resistor 1 Tamb = 25°C See Figure 12 on page 9 30/40 Output voltage low R2 = kW See Figure 12 on page 9 Output voltage high Output current clamping R2 = 0 See Figure 12 on page 9 IOCL 7 Input Input DC current VIN = 0 See Figure 12 on page 9 IIN_DCMAX -400 Input DC-current See Figure 6 on page 7 VIN = 0 Vs = 5 V Tamb = 25°C IIN_DCMAX -700 * Type means A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage 4 T2526 T2526 Electrical Characteristics, 5-V Operation Continued Tamb = 25°C, VS = 5 V unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Min. detection threshold Test signal: current See Figure 11 on page 9 See Figure 4 on page 6 VS = 5 V Tamb = 25°C Min. detection threshold current with AC current IIN_DC = 1µA square pp disturbance IIN_AC100 = burst N = 16 3 µA at 100 Hz f = f0 tPER = 10 ms Figure 10 on page 8 BER = 50 2 IEemin -890 -2500 Test signal: See Figure 11 on page 9 VS = 5 V, Tamb = 25°C Max. detection threshold current with VIN > 0V IIN_DC = 1µA square pp burst N = 16 f = f0 tPER = 10 ms Figure 10 on page 8 BER = 5% 2 IEemax -500 8 Controlled Amplifier and Filter Maximum value of variable gain CGA GVARMAX Minimum value of variable gain CGA GVARMIN Total internal amplification 3 GMAX Resulting center frequency fusing accuracy f0 fused at VS = 3 V VS = 5 V, Tamb = 25°C Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage All pins Þ 2000V HBM 200V MM, MIL-STD-883C, Method Reliability Electrical qualification 1000h in molded SO8 plastic package Typical Electrical Curves at Tamb = 25°C Figure IEemin versus IIN_DC , VS = 3 V VS = 3 V f = f0 I Eemin nA I IN_DC µA Figure IEemin versus IIN_DC , VS = 5 V VS = 5 V f = f0 I Eemin nA 6 T2526 I IN_DC µA Figure VIN versus IIN_DC, VS = 3 V V IN V VS = 3 V f = f0 I IN_DC µA T2526 Figure VIN versus IIN_DC, VS = 5 V V IN V VS = 5 V f = f0 I IN_DC µA Figure Data Transmission Rate, VS = 3 V Bits/s 5000 4500 4000 VS = 3 V 3500 3000 2500 2000 1500 1000 f 0 kHz Short burst Standard type Lamp type Figure Data Transmission Rate, VS = 5 V Bits/s 5000 4500 4000 Ordering Information Delivery unsawn wafers DDW in box, SO8 150 mil and TSSOP8 3 mm body . Extended Type Number T2526N0xx 1 -yyy 5 T2526N1xx 1 -DDW PL 2 1 RPU 3 30 D 4 2179 Type Standard type 10 pulses, enhanced sensibility, high data rate T2526N2xx 1 -yyy 5 1404 Lamp type 10 pulses, enhanced suppression of disturbances, secure T2526N3xx 1 -DDW 1404 data transmission T2526N6xx 1 -yyy 5 3415 Short burst type 6 pulses, enhanced data rate T2526N7xx 1 -DDW 3415 xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz 76 kHz type on request Two pad layout versions see Figure 14 and Figure 15 available for different assembly demand Integrated pull-up resistor at pin OUT see electrical characteristics Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V see Figure 10 on page 8 yyy means kind of packaging: .......DDW -> unsawn wafers in box .......6AQ -> only on request, TSSOP8 taped and reeled Pad Layout Figure Pad Layout 1 DDW only T2526 FUSING Figure Pad Layout 2 DDW, SO8 or TSSOP8 6 GND 5 IN T2526 3 OUT FUSING Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel 41 26-426-5555 Fax 41 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel 852 2721-9778 Fax 852 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel 81 3-3523-3551 Fax 81 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel 33 2-40-18-18-18 Fax 33 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel 33 4-42-53-60-00 Fax 33 4-42-53-60-01

PDF Datasheet Preview

• No External Components Except PIN Diode
• Supply-voltage Range V to V
• Automatic Sensitivity Adaptation AGC
• Automatic Strong Signal Adaptation ATC
• Automatic Supply Voltage Adaptation
• Enhanced Immunity against Ambient Light Disturbances
• Available for Carrier Frequencies between 30 kHz to 76 kHz adjusted by Zener-Diode

Fusing
• TTL and CMOS Compatible
• Audio Video Applications
• Home Appliances
• Remote Control Equipment

Low-voltage IR Receiver ASSP

The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram of Figure The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier CGA the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the choosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present enviromental conditions ambient light, modulated lamps etc. . Other special features are used to adapt to the current application to secure best transmission quality. The T2526 operates in a supply-voltage range from V to V. By default, the T2526 is optimized for best performance within V to V.

Figure Block Diagram

T2526

IN Input

CGA and filter

Demodulator

OUT Microcontroller

Oscillator

Carrier frequency f0

T2526

Modulated IR signal min 6 or 10 pulses

AGC/ATC and digital control

Pin Configuration

Figure Pinning SO8 and TSSOP8

OUT 3

Pin Description

Function Supply voltage Not connected Data output Not connected Input PIN-diode Ground Not connected Not connected
8 NC 7 NC 6 GND 5 IN

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameter

Value

Unit

Supply voltage

Supply current

Input voltage
to VS

Input DC current at VS = 5 V

Output voltage
to VS

Output current

Operating temperature

Tamb
-25 to +85

Storage temperature

Tstg
-40 to +125
Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage

Electrical Characteristics, 3-V Operation Continued

Tamb = 25°C, VS = 3 V unless otherwise specified.

No. Parameters

Test Conditions

Pin Symbol Min. Typ. Max. Unit Type*
4 Controlled Amplifier and Filter

Maximum value of variable gain CGA

GVARMAX

Minimum value of variable gain CGA

GVARMIN

Total internal amplification 3

GMAX

Center frequency fusing accuracy of bandpass

VS = 3 V, Tamb = 25°C
f03V_FUSE

Overall accuracy center frequency of bandpass
f03V

Overall accuracy center frequency of bandpass

Tamb = 0 to 70°C
f03V

BPF bandwidth
-3 dB f0 = 38 kHz;

See Figure 9 on page 8
* Type means A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage

Electrical Characteristics, 5-V Operation

Tamb = 25°C, VS = 5 V unless otherwise specified.

No. Parameters

Test Conditions

Pin Symbol Min. Typ. Max. Unit Type*
5 Supply

Supply-voltage range Supply current 6 Output

IIN =0

Internal pull-up resistor 1 Tamb = 25°C

See Figure 12 on page 9
30/40

Output voltage low

R2 = kW

See Figure 12 on page 9

Output voltage high

Output current clamping

R2 = 0 See Figure 12 on page 9

IOCL
7 Input

Input DC current

VIN = 0 See Figure 12 on page 9

IIN_DCMAX
-400

Input DC-current See Figure 6 on page 7

VIN = 0 Vs = 5 V Tamb = 25°C

IIN_DCMAX
-700
* Type means A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage
4 T2526

T2526

Electrical Characteristics, 5-V Operation Continued

Tamb = 25°C, VS = 5 V unless otherwise specified.

No. Parameters

Test Conditions

Pin Symbol Min. Typ. Max. Unit Type*

Min. detection threshold Test signal:
current

See Figure 11 on page 9

See Figure 4 on page 6 VS = 5 V

Tamb = 25°C

Min. detection threshold current with AC current

IIN_DC = 1µA square pp
disturbance IIN_AC100 = burst N = 16
3 µA at 100 Hz
f = f0 tPER = 10 ms

Figure 10 on page 8

BER = 50 2

IEemin
-890 -2500

Test signal:

See Figure 11 on page 9

VS = 5 V, Tamb = 25°C

Max. detection threshold current with VIN > 0V

IIN_DC = 1µA square pp
burst N = 16
f = f0 tPER = 10 ms Figure 10 on page 8 BER = 5% 2

IEemax
-500
8 Controlled Amplifier and Filter

Maximum value of variable gain CGA

GVARMAX

Minimum value of variable gain CGA

GVARMIN

Total internal amplification 3

GMAX

Resulting center frequency fusing
accuracy
f0 fused at VS = 3 V VS = 5 V, Tamb = 25°C
Notes Depending on version, see “Ordering Information” BER = bit error rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage

All pins Þ 2000V HBM 200V MM, MIL-STD-883C, Method

Reliability

Electrical qualification 1000h in molded SO8 plastic package

Typical Electrical Curves at Tamb = 25°C

Figure IEemin versus IIN_DC , VS = 3 V

VS = 3 V f = f0

I Eemin nA

I IN_DC µA

Figure IEemin versus IIN_DC , VS = 5 V

VS = 5 V f = f0

I Eemin nA
6 T2526

I IN_DC µA

Figure VIN versus IIN_DC, VS = 3 V

V IN V

VS = 3 V f = f0

I IN_DC µA

T2526

Figure VIN versus IIN_DC, VS = 5 V

V IN V

VS = 5 V
f = f0

I IN_DC µA

Figure Data Transmission Rate, VS = 3 V

Bits/s
5000
4500 4000

VS = 3 V
3500
3000
2500
2000
1500
1000
f 0 kHz

Short burst Standard type Lamp type

Figure Data Transmission Rate, VS = 5 V

Bits/s
5000
4500 4000
Ordering Information

Delivery unsawn wafers DDW in box, SO8 150 mil and TSSOP8 3 mm body .

Extended Type Number

T2526N0xx 1 -yyy 5

T2526N1xx 1 -DDW

PL 2 1

RPU 3 30

D 4 2179

Type Standard type 10 pulses, enhanced sensibility, high data rate

T2526N2xx 1 -yyy 5
1404 Lamp type 10 pulses, enhanced suppression of disturbances, secure

T2526N3xx 1 -DDW
1404 data transmission

T2526N6xx 1 -yyy 5
3415

Short burst type 6 pulses, enhanced data rate

T2526N7xx 1 -DDW
3415
xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz 76 kHz type on request Two pad layout versions see Figure 14 and Figure 15 available for different assembly demand Integrated pull-up resistor at pin OUT see electrical characteristics Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V see Figure 10 on page 8 yyy means kind of packaging:
.......DDW -> unsawn wafers in box
.......6AQ -> only on request, TSSOP8 taped and reeled

Pad Layout

Figure Pad Layout 1 DDW only

T2526

FUSING

Figure Pad Layout 2 DDW, SO8 or TSSOP8
6 GND 5 IN

T2526
3 OUT

FUSING

Atmel Corporation
2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 487-2600

Regional Headquarters

Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel 41 26-426-5555 Fax 41 26-426-5500

Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel 852 2721-9778 Fax 852 2722-1369

Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel 81 3-3523-3551 Fax 81 3-3523-7581

Atmel Operations

Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314

Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314

La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel 33 2-40-18-18-18 Fax 33 2-40-18-19-60

ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel 33 4-42-53-60-00 Fax 33 4-42-53-60-01

More datasheets: PM43-470K | PM43-390K | PM43-330K | PM43-220M | PM43-180M | PM43-150M | PM43-100M | PM43-270M | PM43-680K | PM43-120M

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived T2526N038-6AQ Datasheet file may be downloaded here without warranties.

Datasheet ID: T2526N038-6AQ 519392