The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
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AT28BV64-30TC (pdf) |
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AT28BV64-30SC |
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AT28BV64-30PC |
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AT28BV64-30JC |
PDF Datasheet Preview |
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• 2.7V to 3.6V Supply Full Read and Write Operation • Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Current • Read Access Time - 300 ns • Byte Write - 3 ms • Direct Microprocessor Control DATA Polling READY/BUSY Open Drain Output • High Reliability CMOS Technology Endurance 100,000 Cycles Data Retention 10 Years • JEDEC Approved Byte-Wide Pinout • Commercial and Industrial Temperature Ranges The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation less than 30 mW. When the device is deselected the standby current is less than 50 µA. continued Pin Configurations Pin Name A0 - A12 CE OE WE I/O0 - I/O7 RDY/BUSY NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect Don’t Connect PLCC Top View PDIP, SOIC Top View RDY/BUSY 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 I/O0 11 I/O1 12 I/O2 13 GND 14 28 VCC 27 WE 26 NC 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 I/O7 18 I/O6 17 I/O5 16 I/O4 15 I/O3 TSOP Top View 4 A7 3 A12 2 RDY/BUSY 1 DC 32 VCC 31 WE 30 NC A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 NC 12 I/O0 13 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 21 I/O6 OE 1 A11 2 A9 3 A8 4 NC 5 WE 6 VCC 7 RDY/BUSY 8 A12 9 A7 10 A6 11 A5 12 A4 13 A3 14 28 A10 27 CE 26 I/O7 25 I/O6 24 I/O5 23 I/O4 22 I/O3 21 GND 20 I/O2 19 I/O1 18 I/O0 17 A0 16 A1 15 A2 64K 8K x 8 Battery-Voltage Parallel EEPROMs AT28BV64 I/O1 14 I/O2 15 VSS 16 DC 17 I/O3 18 I/O4 19 I/O5 20 The AT28BV64 is accessed like a Static RAM for the read or write cycles without the need for external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle, level detection of RDY/BUSY and DATA polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin. Atmel’s 28BV64 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of EEPROM are available for device identification or tracking. Block Diagram Absolute Maximum Ratings* Temperature Under Bias -55°C to +125°C Storage Temperature -65°C to +150°C All Input Voltages including NC Pins with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability AT28BV64 AT28BV64 Ordering Information 1 tACC ICC mA Operating Active Standby Voltage 2.7V to 3.6V 2.7V to 3.6V Note See Valid Part Number table below. Ordering Code AT28BV64-30JC AT28BV64-30PC AT28BV64-30SC AT28BV64-30SC AT28BV64-30JI AT28BV64-30PI AT28BV64-30SI AT28BV64-30TI Package 32J 28P6 28S 28T 32J 28P6 28S 28T Valid Part Number The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations AT28BV64 JC, JI, PC, PI, SC, SI, TC, TI Die Products Reference Section Parallel EEPROM Die Products Operation Range Commercial 0°C to 70°C Industrial -40°C to 85°C 32J 28P6 28S 28T Package Type 32-Lead, Plastic J-Leaded Chip Carrier PLCC 28-Lead, Wide, Plastic Dual Inline Package PDIP 28-Lead, Wide, Plastic Gull Wing Small Outline SOIC 28-Lead, Plastic Thin Small Outline Package TSOP AT28BV64 AT28BV64 Packaging Information 32J, 32-Lead, Plastic J-Leaded Chip Carrier PLCC Dimensions in Inches and Millimeters JEDEC STANDARD MS-016 AE X 45° PIN NO. 1 IDENTIFY X 30° - 45° AT CONTACT POINTS X 45° MAX 3X 28P6, 28-Lead, Wide, Plastic Dual Inline Package PDIP Dimensions in Inches and Millimeters JEDEC STANDARD MS-011 AB SEATING PLANE 0 REF 15 28S, 28-Lead, Wide, Plastic Gull Wing Small Outline SOIC Dimensions in Inches and Millimeters 28T, 28-Lead, Plastic Thin Small Outline Package TSOP Dimensions in Millimeters and Inches * INDEX MARK AREA 0 5 REF *Controlling dimension millimeters AT28BV64 AT28BV64 Atmel Headquarters Atmel Operations |
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