AT25DL161-SSHN-T

AT25DL161-SSHN-T Datasheet


Atmel AT25DL161

Part Datasheet
AT25DL161-SSHN-T AT25DL161-SSHN-T AT25DL161-SSHN-T (pdf)
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Atmel AT25DL161
16-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support

PRELIMINARY DATASHEET

Single 1.65V - 1.95V supply

Serial Peripheral Interface SPI compatible Supports SPI Modes 0 and 3 Supports RapidS operation Supports Dual-Input Program and Dual-Output Read

Very high operating frequencies 100MHz for RapidS 85MHz for SPI Clock-to-output time tV of 5ns maximum

Flexible, optimized erase architecture for code + data storage applications Uniform 4KB, 32KB, and 64KB Block Erase Full Chip Erase

Individual sector protection with Global Protect/Unprotect feature 32 sectors of 64KB each

Hardware controlled locking of protected sectors via WP pin

Sector Lockdown with permanent freeze option Make any combination of 64KB sectors permanently read-only
128-byte, One-Time Programmable OTP Security Register 64 bytes factory preprogrammed, 64 bytes user programmable

Flexible programming Byte/Page Program 1 to 256 bytes

Fast program and erase times 1.0ms typical Page Program 256 bytes time 50ms typical 4KB Block Erase time 250ms typical 32KB Block Erase time 550ms typical 64KB Block Erase time

Program and Erase Suspend/Resume

Automatic checking and reporting of erase/program failures

Software controlled reset

JEDEC Standard Manufacturer and Device ID Read Methodology

Low power dissipation 10mA Active Read current typical at 20MHz 8uA Deep Power-Down current typical

Endurance 100,000 program/erase cycles

Data retention 20 years

Complies with full industrial temperature range

Industry standard green Pb/halide-free/RoHS-compliant package options 8-lead SOIC wide 8-pad Ultra-thin DFN 5 x 6 x 0.6mm 8-ball dBGA WLCSP

The Atmel AT25DL161 is a serial interface Flash memory device designed for use in a wide variety of high-volume, consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DL161, with its erase granularity as small as 4KB, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT25DL161 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large Block Erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added, while still maintaining the same overall device density.

The AT25DL161 also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched, updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DL161 incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process because sectors do not have to be unprotected one by one prior to initial programming.

To take code and data protection to the next level, the AT25DL161 incorporates a sector lockdown mechanism that allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that require portions of the Flash memory array to be permanently protected against malicious attempts at altering program code, data modules, security information or encryption/decryption algorithms, keys, and routines. The device also contains a specialized, OTP One-Time Programmable security register, which can be used for unique device serialization, system-level Electronic Serial Number ESN storage, locked key storage, or other purposes.

Specifically designed for use in 1.8V systems, the AT25DL161 supports read, program, and erase operations with a supply voltage range of 1.65V to 1.95V. No separate voltage is required for programming and erasing.

Atmel AT25DL161 [PRELIMINARY DATASHEET]

Pin Descriptions and Pinouts

Table Pin Descriptions

Name and Function

Asserted State

Type

Chip Select Asserting the CS pin selects the device. When the CS pin is
deasserted, the device will be deselected and normally be placed in standby
mode not deep Power-Down mode and the SO pin will be in a high-impedance
state. When the device is deselected, data will not be accepted on the SI pin.

Input

A high-to-low transition on the CS pin is required to start an operation and a
low-to-high transition is required to end an operation. When ending an internally
self-timed operation, such as a program or erase cycle, the device will not enter
Ordering Information
Ordering Code Detail AT 2 5DL 1 6 1

Atmel Designator

Product Family

Device Density
16 = 16-megabit

Interface
1 = Serial

Shipping Carrier Option

B = Bulk tubes Y = Bulk trays T = Tape and reel

Operating Voltage

N = 1.65V minimum 1.65V to 1.95V

Device Grade

H = Green, NiPdAu lead finish, Industrial temperature range to +85°C

U = Green, Matte Sn or Sn alloy, Industrial temperature range to +85°C

Package Option

SS = 8-lead, wide SOIC M = 8-pad, 5 x 6 x 0.6mm UDFN U = 8-ball dBGA WLCSP

Green Package Options Pb/halide-free/RoHS-compliant
Atmel Ordering Codes

Package

Lead Pad Finish

Operating Voltage

Max. Freq. MHz

AT25DL161-SSHN-B 1 AT25DL161-SSHN-T 1

AT25DL161-MHN-Y 1 AT25DL161-MHN-T 1
8S1 8MA1

NiPdAu
1.65V to 1.95V

AT25DL161-UUN-T 1
8-WLCSP 2

SnAgCu

Notes The shipping carrier option code is not marked on the devices. Please contact Atmel for 8-ball dBGA WLCSP package outline drawing.

Operation Range

Industrial -40°C to +85°C
8S1 8MA1 8-WLCSP

Package Type 8-lead 0.150"-wide, Plastic, Gull Wing, Small Outline JEDEC SOIC 8-pad 5 x 6 x 0.6mm body , Thermally Enhanced Plastic Ultra Thin Dual Flat No-lead UDFN 8-ball, 0.5mm pitch, die Ball Grid Array dBGA

Atmel AT25DL161 [PRELIMINARY DATASHEET] 53

Packaging Information
8S1 8-lead JEDEC SOIC

TOP VIEW

SIDE VIEW

Notes This drawing is for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.

END VIEW

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL MIN

NOTE

Package Drawing Contact 8S1, 8-lead Wide Body , Plastic Gull Wing Small Outline JEDEC SOIC

Atmel AT25DL161 [PRELIMINARY DATASHEET] 54
8MA1 8-pad UDFN

Pin 1 ID D

SIDE VIEW y

TOP VIEW

Pin #1 Notch R

Option B

Option A

Pin #1 Chamfer C

BOTTOM VIEW

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL A A1 b C D D2 E E2 e L y K
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Datasheet ID: AT25DL161-SSHN-T 518909