Atmel AT25DL161
Part | Datasheet |
---|---|
AT25DL161-SSHN-T | AT25DL161-SSHN-T (pdf) |
PDF Datasheet Preview |
---|
Atmel AT25DL161 16-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support PRELIMINARY DATASHEET Single 1.65V - 1.95V supply Serial Peripheral Interface SPI compatible Supports SPI Modes 0 and 3 Supports RapidS operation Supports Dual-Input Program and Dual-Output Read Very high operating frequencies 100MHz for RapidS 85MHz for SPI Clock-to-output time tV of 5ns maximum Flexible, optimized erase architecture for code + data storage applications Uniform 4KB, 32KB, and 64KB Block Erase Full Chip Erase Individual sector protection with Global Protect/Unprotect feature 32 sectors of 64KB each Hardware controlled locking of protected sectors via WP pin Sector Lockdown with permanent freeze option Make any combination of 64KB sectors permanently read-only 128-byte, One-Time Programmable OTP Security Register 64 bytes factory preprogrammed, 64 bytes user programmable Flexible programming Byte/Page Program 1 to 256 bytes Fast program and erase times 1.0ms typical Page Program 256 bytes time 50ms typical 4KB Block Erase time 250ms typical 32KB Block Erase time 550ms typical 64KB Block Erase time Program and Erase Suspend/Resume Automatic checking and reporting of erase/program failures Software controlled reset JEDEC Standard Manufacturer and Device ID Read Methodology Low power dissipation 10mA Active Read current typical at 20MHz 8uA Deep Power-Down current typical Endurance 100,000 program/erase cycles Data retention 20 years Complies with full industrial temperature range Industry standard green Pb/halide-free/RoHS-compliant package options 8-lead SOIC wide 8-pad Ultra-thin DFN 5 x 6 x 0.6mm 8-ball dBGA WLCSP The Atmel AT25DL161 is a serial interface Flash memory device designed for use in a wide variety of high-volume, consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DL161, with its erase granularity as small as 4KB, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT25DL161 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large Block Erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added, while still maintaining the same overall device density. The AT25DL161 also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched, updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DL161 incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process because sectors do not have to be unprotected one by one prior to initial programming. To take code and data protection to the next level, the AT25DL161 incorporates a sector lockdown mechanism that allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that require portions of the Flash memory array to be permanently protected against malicious attempts at altering program code, data modules, security information or encryption/decryption algorithms, keys, and routines. The device also contains a specialized, OTP One-Time Programmable security register, which can be used for unique device serialization, system-level Electronic Serial Number ESN storage, locked key storage, or other purposes. Specifically designed for use in 1.8V systems, the AT25DL161 supports read, program, and erase operations with a supply voltage range of 1.65V to 1.95V. No separate voltage is required for programming and erasing. Atmel AT25DL161 [PRELIMINARY DATASHEET] Pin Descriptions and Pinouts Table Pin Descriptions Name and Function Asserted State Type Chip Select Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected and normally be placed in standby mode not deep Power-Down mode and the SO pin will be in a high-impedance state. When the device is deselected, data will not be accepted on the SI pin. Input A high-to-low transition on the CS pin is required to start an operation and a low-to-high transition is required to end an operation. When ending an internally self-timed operation, such as a program or erase cycle, the device will not enter Ordering Information Ordering Code Detail AT 2 5DL 1 6 1 Atmel Designator Product Family Device Density 16 = 16-megabit Interface 1 = Serial Shipping Carrier Option B = Bulk tubes Y = Bulk trays T = Tape and reel Operating Voltage N = 1.65V minimum 1.65V to 1.95V Device Grade H = Green, NiPdAu lead finish, Industrial temperature range to +85°C U = Green, Matte Sn or Sn alloy, Industrial temperature range to +85°C Package Option SS = 8-lead, wide SOIC M = 8-pad, 5 x 6 x 0.6mm UDFN U = 8-ball dBGA WLCSP Green Package Options Pb/halide-free/RoHS-compliant Atmel Ordering Codes Package Lead Pad Finish Operating Voltage Max. Freq. MHz AT25DL161-SSHN-B 1 AT25DL161-SSHN-T 1 AT25DL161-MHN-Y 1 AT25DL161-MHN-T 1 8S1 8MA1 NiPdAu 1.65V to 1.95V AT25DL161-UUN-T 1 8-WLCSP 2 SnAgCu Notes The shipping carrier option code is not marked on the devices. Please contact Atmel for 8-ball dBGA WLCSP package outline drawing. Operation Range Industrial -40°C to +85°C 8S1 8MA1 8-WLCSP Package Type 8-lead 0.150"-wide, Plastic, Gull Wing, Small Outline JEDEC SOIC 8-pad 5 x 6 x 0.6mm body , Thermally Enhanced Plastic Ultra Thin Dual Flat No-lead UDFN 8-ball, 0.5mm pitch, die Ball Grid Array dBGA Atmel AT25DL161 [PRELIMINARY DATASHEET] 53 Packaging Information 8S1 8-lead JEDEC SOIC TOP VIEW SIDE VIEW Notes This drawing is for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. END VIEW COMMON DIMENSIONS Unit of Measure = mm SYMBOL MIN NOTE Package Drawing Contact 8S1, 8-lead Wide Body , Plastic Gull Wing Small Outline JEDEC SOIC Atmel AT25DL161 [PRELIMINARY DATASHEET] 54 8MA1 8-pad UDFN Pin 1 ID D SIDE VIEW y TOP VIEW Pin #1 Notch R Option B Option A Pin #1 Chamfer C BOTTOM VIEW COMMON DIMENSIONS Unit of Measure = mm SYMBOL A A1 b C D D2 E E2 e L y K |
More datasheets: VRE310BD | VRE310CS | FFPF15U20DPTU | CC40-230 | B39202B3510U810 | 1290112200 | CY7C1019B-12ZXC | CY7C1019B-12VC | 8191 | S280 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT25DL161-SSHN-T Datasheet file may be downloaded here without warranties.