AT49BV802D-70TU

AT49BV802D-70TU Datasheet

AT49BV802D AT49BV802DT

Part	Datasheet
AT49BV802D-70TU	AT49BV802D-70TU (pdf)

Related Parts	Information
AT49BV802DT-70CU	AT49BV802DT-70CU
AT49BV802DT-70TU	AT49BV802DT-70TU
AT49BV802D-70CU	AT49BV802D-70CU

PDF Datasheet Preview
• Single Voltage Read/Write Operation 2.65V to 3.6V • Access Time 70 ns • Sector Erase Architecture Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout Eight 4K Word 8K Bytes Sectors with Individual Write Lockout • Fast Byte/Word Program Time 10 µs • Fast Sector Erase Time 100 ms • Suspend/Resume Feature for Erase and Program Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word • Low-power Operation 10 mA Active 15 µA Standby • Data Polling, Toggle Bit, Ready/Busy for End of Program Detection • RESET Input for Device Initialization • Sector Lockdown Support • TSOP and CBGA Package Options • Top or Bottom Boot Block Configuration Available • 128-bit Protection Register • Minimum 100,000 Erase Cycles • Common Flash Interface CFI • Green Pb/Halide-free Packaging 8-megabit 512K x 16/ 1M x 8 3-volt Only Flash Memory AT49BV802D AT49BV802DT The AT49BV802D T is a 2.7-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15 the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sectors for erase operations. The AT49BV802D T is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector see “Sector Lockdown” section . To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by the toggle bit. A six-byte command Enter Single Pulse Program Mode sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode Single Pulse Byte/Word Program is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work while in this mode if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code. The BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is used as an input for the LSB A-1 address function. Pin Configurations Pin Name A0 - A18 CE OE WE RESET RDY/BUSY I/O0 - I/O14 I/O15 A-1 BYTE NC Function Addresses Chip Enable Output Enable Write Enable Reset READY/BUSY Output Data Inputs/Outputs I/O15 Data Input/Output, Word Mode A-1 LSB Address Input, Byte Mode Selects Byte or Word Mode No Connect 2 AT49BV802D T 48-lead TSOP Type 1 Top View A15 1 A14 2 A13 3 A12 4 A11 5 A10 6 A9 7 A8 8 NC 9 NC 10 WE 11 RESET 12 NC 13 NC 14 RDY/BUSY 15 A18 16 A17 17 A7 18 A6 19 A5 20 A4 21 A3 22 A2 23 A1 24 AT49BV802D T 48 A16 47 BYTE 46 GND 45 I/O15/A-1 44 I/O7 43 I/O14 42 I/O6 41 I/O13 40 I/O5 39 I/O12 38 I/O4 37 VCC 36 I/O11 35 I/O3 34 I/O10 33 I/O2 32 I/O9 31 I/O1 30 I/O8 29 I/O0 28 OE 27 GND 26 CE 25 A0 48-ball CBGA Top View Ball Down 123456 A3 A7 RDY/BUSY WE A9 A13 A4 A17 NC RST A8 A12 A2 A6 A18 NC A10 A14 A1 A5 NC A11 A15 A0 I/O0 I/O2 I/O5 I/O7 A16 CE I/O8 I/O10 I/O12 I/O14 BYTE OE I/O9 I/O11 VCC I/O13 I/015/A-1 VSS I/O1 I/O3 I/O4 I/O6 VSS Block Diagram I/O0 - I/O15/A-1 OUTPUT BUFFER INPUT BUFFER A0 - A18 INPUT BUFFER ADDRESS LATCH Ordering Information Green Package Pb/Halide-free tACC ICC mA Active Standby Ordering Code AT49BV802D-70CU AT49BV802D-70TU AT49BV802DT-70CU AT49BV802DT-70TU AT49BV802D T Package 48C19 48T 48C19 48T Operation Range Industrial -40° to 85° C Industrial -40° to 85° C 48C19 48T Package Type 48-ball, Plastic Chip-Size Ball Grid Array Package CBGA 48-lead, Plastic Thin Small Outline Package TSOP Packaging Information 48C19 CBGA A1 Ball ID A B C D E F G H Top View A1 Ball Corner 6 54321 Bottom View Side View COMMON DIMENSIONS Unit of Measure = mm SYMBOL E E1 D D1 A A1 e Øb NOM MAX NOTE TITLE 2325 Orchard Parkway 48C19, 48-ball 6 x 8 Array , mm Pitch, R San Jose, CA 95131 x mm Chip-scale Ball Grid Array Package CBGA 7/2/03 48C19 28 AT49BV802D T 48T TSOP PIN 1 AT49BV802D T 0º ~ 8º c Pin 1 Identifier SEATING PLANE GAGE PLANE This package conforms to JEDEC reference MO-142, Variation DD. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum. COMMON DIMENSIONS Unit of Measure = mm SYMBOL A A1 A2 D D1 E L L1 b c e MIN NOM MAX BASIC BASIC NOTE

PDF Datasheet Preview

• Single Voltage Read/Write Operation 2.65V to 3.6V
• Access Time 70 ns
• Sector Erase Architecture

Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout Eight 4K Word 8K Bytes Sectors with Individual Write Lockout
• Fast Byte/Word Program Time 10 µs
• Fast Sector Erase Time 100 ms
• Suspend/Resume Feature for Erase and Program Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending

Programming of Any Other Byte/Word
• Low-power Operation
10 mA Active 15 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface CFI
• Green Pb/Halide-free Packaging
8-megabit 512K x 16/ 1M x 8 3-volt Only Flash Memory

AT49BV802D AT49BV802DT

The AT49BV802D T is a 2.7-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15 the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sectors for erase operations. The AT49BV802D T is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector see “Sector Lockdown” section .

To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by the toggle bit.

A six-byte command Enter Single Pulse Program Mode sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode Single Pulse Byte/Word Program is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work while in this mode if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code.

The BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE.

If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is used as an input for the LSB A-1 address function.

Pin Configurations

Pin Name A0 - A18 CE OE WE RESET RDY/BUSY I/O0 - I/O14

I/O15 A-1

BYTE NC

Function Addresses Chip Enable Output Enable Write Enable Reset READY/BUSY Output Data Inputs/Outputs I/O15 Data Input/Output, Word Mode A-1 LSB Address Input, Byte Mode Selects Byte or Word Mode No Connect
2 AT49BV802D T
48-lead TSOP Type 1 Top View

A15 1 A14 2 A13 3 A12 4 A11 5 A10 6

A9 7 A8 8 NC 9 NC 10 WE 11 RESET 12 NC 13 NC 14 RDY/BUSY 15 A18 16 A17 17 A7 18 A6 19 A5 20 A4 21 A3 22 A2 23 A1 24

AT49BV802D T
48 A16 47 BYTE 46 GND 45 I/O15/A-1 44 I/O7 43 I/O14 42 I/O6 41 I/O13 40 I/O5 39 I/O12 38 I/O4 37 VCC 36 I/O11 35 I/O3 34 I/O10 33 I/O2 32 I/O9 31 I/O1 30 I/O8 29 I/O0 28 OE 27 GND 26 CE 25 A0
48-ball CBGA Top View Ball Down
123456

A3 A7 RDY/BUSY WE A9 A13

A4 A17 NC RST A8 A12

A2 A6 A18 NC A10 A14

A1 A5 NC A11 A15

A0 I/O0 I/O2 I/O5 I/O7 A16

CE I/O8 I/O10 I/O12 I/O14 BYTE

OE I/O9 I/O11 VCC I/O13 I/015/A-1

VSS I/O1 I/O3 I/O4 I/O6 VSS

Block Diagram

I/O0 - I/O15/A-1

OUTPUT BUFFER

INPUT BUFFER

A0 - A18

INPUT BUFFER

ADDRESS LATCH
Ordering Information

Green Package Pb/Halide-free
tACC

ICC mA

Active

Standby
Ordering Code

AT49BV802D-70CU AT49BV802D-70TU AT49BV802DT-70CU AT49BV802DT-70TU

AT49BV802D T

Package 48C19 48T 48C19 48T

Operation Range Industrial
-40° to 85° C Industrial
-40° to 85° C
48C19 48T

Package Type 48-ball, Plastic Chip-Size Ball Grid Array Package CBGA 48-lead, Plastic Thin Small Outline Package TSOP

Packaging Information
48C19 CBGA

A1 Ball ID

A B C D E F G H

Top View

A1 Ball Corner
6 54321

Bottom View

Side View

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL E E1 D D1 A A1 e Øb

NOM MAX

NOTE

TITLE 2325 Orchard Parkway 48C19, 48-ball 6 x 8 Array , mm Pitch, R San Jose, CA 95131 x mm Chip-scale Ball Grid Array Package CBGA
7/2/03
48C19
28 AT49BV802D T
48T TSOP

PIN 1

AT49BV802D T
0º ~ 8º c

Pin 1 Identifier

SEATING PLANE

GAGE PLANE

This package conforms to JEDEC reference MO-142, Variation DD. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum.

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL A A1 A2 D D1 E L L1 b c e

MIN NOM MAX

BASIC

BASIC

NOTE

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Datasheet ID: AT49BV802D-70TU 518682