AT49BV163DT-70TU-T

AT49BV163DT-70TU-T Datasheet

AT49BV163D AT49BV163DT

Part	Datasheet
AT49BV163DT-70TU-T	AT49BV163DT-70TU-T (pdf)

Related Parts	Information
AT49BV163D-70CU-T	AT49BV163D-70CU-T
AT49BV163D-70TU-T	AT49BV163D-70TU-T
AT49BV163DT-70CU-T	AT49BV163DT-70CU-T
AT49BV163D-70TU	AT49BV163D-70TU
AT49BV163D-70CU	AT49BV163D-70CU
AT49BV163DT-70TU	AT49BV163DT-70TU
AT49BV163DT-70CU	AT49BV163DT-70CU

PDF Datasheet Preview
• Single Voltage Read/Write Operation 2.65V to 3.6V • Fast Read Access Time 70 ns • Sector Erase Architecture Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout Eight 4K Word 8K Bytes Sectors with Individual Write Lockout • Fast Word Program Time 10 µs • Fast Sector Erase Time 100 ms • Suspend/Resume Feature for Erase and Program Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word • Low-power Operation 10 mA Active 15 µA Standby • Data Polling, Toggle Bit, Ready/Busy for End of Program Detection • RESET Input for Device Initialization • Sector Lockdown Support • TSOP and CBGA Package Options • Top or Bottom Boot Block Configuration Available • 128-bit Protection Register • Minimum 100,000 Erase Cycles • Common Flash Interface CFI • Green Pb/Halide-free Packaging 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory AT49BV163D AT49BV163DT The AT49BV163D T is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15 the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector see “Sector Lockdown” on page To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by the toggle bit. A six-byte command Enter Single Pulse Program Mode sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode Single Pulse Byte/Word Program is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work while in this mode if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code. The BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is used as an input for the LSB A-1 address function. Pin Configurations Pin Name A0 - A19 CE OE WE RESET RDY/BUSY I/O0 - I/O14 I/O15 A-1 BYTE NC Function Addresses Chip Enable Output Enable Write Enable Reset READY/BUSY Output Data Inputs/Outputs I/O15 Data Input/Output, Word Mode A-1 LSB Address Input, Byte Mode Selects Byte or Word Mode No Connect 48-lead TSOP Type 1 Top View A15 1 A14 2 A13 3 A12 4 A11 5 A10 6 A9 7 A8 8 A19 9 NC 10 WE 11 RESET 12 NC 13 NC 14 RDY/BUSY 15 A18 16 A17 17 A7 18 A6 19 A5 20 A4 21 A3 22 A2 23 A1 24 48 A16 47 BYTE 46 GND 45 I/O15/A-1 44 I/O7 43 I/O14 42 I/O6 41 I/O13 40 I/O5 39 I/O12 38 I/O4 37 VCC 36 I/O11 35 I/O3 34 I/O10 33 I/O2 32 I/O9 31 I/O1 30 I/O8 29 I/O0 28 OE 27 GND 26 CE 25 A0 48-ball CBGA Top View Ball Down A7 RDY/BUSY WE A10 A14 A11 A15 I/O0 I/O2 I/O5 I/O7 A16 I/O8 I/O10 I/O12 I/O14 BYTE I/O9 I/O11 VCC I/O13 I/015/A-1 I/O1 I/O3 I/O4 I/O6 VSS Ordering Information Green Package Pb/Halide-free tACC ICC mA Active Standby Ordering Code AT49BV163D-70CU AT49BV163DT-70CU AT49BV163D-70TU AT49BV163DT-70TU Package 48C19 Operation Range Industrial -40° to 85° C 48C19 48T Package Type 48-ball, Plastic Chip-Size Ball Grid Array Package CBGA 48-lead, Plastic Thin Small Outline Package TSOP 24 AT49BV163D T Packaging Information 48C19 CBGA AT49BV163D T A1 Ball ID A B C D E F G H Top View A1 Ball Corner 6 54321 Bottom View Side View COMMON DIMENSIONS Unit of Measure = mm SYMBOL E E1 D D1 A A1 e Øb NOM MAX NOTE TITLE 2325 Orchard Parkway 48C19, 48-ball 6 x 8 Array , mm Pitch, R San Jose, CA 95131 x mm Chip-scale Ball Grid Array Package CBGA 7/2/03 48C19 48T TSOP PIN 1 0º ~ 8º c Pin 1 Identifier SEATING PLANE GAGE PLANE This package conforms to JEDEC reference MO-142, Variation DD. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum. COMMON DIMENSIONS Unit of Measure = mm SYMBOL A A1 A2 D D1 E L L1 b c e MIN NOM MAX BASIC BASIC NOTE

PDF Datasheet Preview

• Single Voltage Read/Write Operation 2.65V to 3.6V
• Fast Read Access Time 70 ns
• Sector Erase Architecture

Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout Eight 4K Word 8K Bytes Sectors with Individual Write Lockout
• Fast Word Program Time 10 µs
• Fast Sector Erase Time 100 ms
• Suspend/Resume Feature for Erase and Program Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending

Programming of Any Other Byte/Word
• Low-power Operation
10 mA Active 15 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface CFI
• Green Pb/Halide-free Packaging
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory

AT49BV163D AT49BV163DT

The AT49BV163D T is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15 the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector see “Sector Lockdown” on page

To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by the toggle bit.

A six-byte command Enter Single Pulse Program Mode sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode Single Pulse Byte/Word Program is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase,

Erase Suspend/Resume and Program Suspend/Resume commands will not work while in this mode if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code.

The BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE.

If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and the I/O15 pin is used as an input for the LSB A-1 address function.

Pin Configurations

Pin Name A0 - A19 CE OE WE RESET RDY/BUSY I/O0 - I/O14

I/O15 A-1

BYTE NC

Function Addresses Chip Enable Output Enable Write Enable Reset READY/BUSY Output Data Inputs/Outputs I/O15 Data Input/Output, Word Mode A-1 LSB Address Input, Byte Mode Selects Byte or Word Mode No Connect
48-lead TSOP Type 1 Top View

A15 1 A14 2 A13 3 A12 4 A11 5 A10 6

A9 7 A8 8 A19 9 NC 10 WE 11 RESET 12 NC 13 NC 14 RDY/BUSY 15 A18 16 A17 17 A7 18 A6 19 A5 20 A4 21 A3 22 A2 23 A1 24
48 A16 47 BYTE 46 GND 45 I/O15/A-1 44 I/O7 43 I/O14 42 I/O6 41 I/O13 40 I/O5 39 I/O12 38 I/O4 37 VCC 36 I/O11 35 I/O3 34 I/O10 33 I/O2 32 I/O9 31 I/O1 30 I/O8 29 I/O0 28 OE 27 GND 26 CE 25 A0
48-ball CBGA Top View Ball Down

A7 RDY/BUSY WE

A10 A14

A11 A15

I/O0

I/O2

I/O5

I/O7 A16

I/O8

I/O10

I/O12 I/O14 BYTE

I/O9

I/O11

VCC I/O13 I/015/A-1

I/O1

I/O3

I/O4

I/O6 VSS
Ordering Information

Green Package Pb/Halide-free
tACC

ICC mA

Active

Standby
Ordering Code

AT49BV163D-70CU

AT49BV163DT-70CU AT49BV163D-70TU

AT49BV163DT-70TU

Package 48C19

Operation Range

Industrial -40° to 85° C
48C19 48T

Package Type 48-ball, Plastic Chip-Size Ball Grid Array Package CBGA 48-lead, Plastic Thin Small Outline Package TSOP
24 AT49BV163D T

Packaging Information
48C19 CBGA

AT49BV163D T

A1 Ball ID

A B C D E F G H

Top View

A1 Ball Corner
6 54321

Bottom View

Side View

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL E E1 D D1 A A1 e Øb

NOM MAX

NOTE

TITLE 2325 Orchard Parkway 48C19, 48-ball 6 x 8 Array , mm Pitch, R San Jose, CA 95131 x mm Chip-scale Ball Grid Array Package CBGA
7/2/03
48C19
48T TSOP

PIN 1
0º ~ 8º c

Pin 1 Identifier

SEATING PLANE

GAGE PLANE

This package conforms to JEDEC reference MO-142, Variation DD. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum.

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL A A1 A2 D D1 E L L1 b c e

MIN NOM MAX

BASIC

BASIC

NOTE

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Datasheet ID: AT49BV163DT-70TU-T 518668