XP1027-BD-000V
XP1027-BD-000V Datasheet
XP1027-BD
| Part | Datasheet |
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XP1027-BD-000V |
XP1027-BD-000V (pdf) |
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| XP1027-BD Power Amplifier GHz • Ka-Band 4 W Power Amplifier • Balanced Design Provides Good Input/Output Match • dB Small Signal Gain • dBm Saturated Output Power • dBm Output Third Order Intercept OIP3 • 100% On-Wafer RF, DC and Output Power Testing • 100% Visual Inspection to MIL-STD-883 Method 2010 • RoHS* Compliant and 260°C Reflow Compatible M/A-COM Tech’s three stage GHz GaAs MMIC power amplifier has a small signal gain of dB with dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses M/ACOM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeterwave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Package XP1027-BD-000V “V” - vacuum release gel paks XP1027-BD-EV1 evaluation module Chip Device Layout Absolute Maximum Ratings Parameter Supply Voltage Vd Supply Current Id1,2,3 Gate Bias Voltage Vg Input Power Pin Storage Temperature Tstg Operating Temperature Ta Channel Temperature Tch 1 Absolute Max. VDC2 325,825,1575 mA VDC +25 dBm -65 °C to +165 °C -55 °C to +85 °C 175 °C Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Under pulsed bias conditions, under CW Psat conditions further reduction in max supply voltage ~0.5V is recommended. ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel • Europe Tel: is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology • India Tel: • China Tel: Visit for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product s or information contained herein without notice. XP1027-BD Power Amplifier GHz Electrical Specifications 27-31 GHz Ambient Temperature T = 25°C Parameter Input Return Loss S11 Output Return Loss S22 Small Signal Gain S21 1 Units dB dBm VDC mA Min. - Typ. 250 625 1185 Measured on wafer pulsed Max. - 300 750 1435 ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel • Europe Tel: is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology • India Tel: • China Tel: Visit for additional data sheets and product information. |
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