UF2840G

UF2840G Datasheet

UF2840G

Part	Datasheet
UF2840G	UF2840G (pdf)

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UF2840G RF Power MOSFET Transistor 40W, 100-500 MHz, 28V • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Rating Units Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature TSTG -55 to 150 Thermal Resistance °C/W TYPICAL DEVICE IMPEDANCES F MHz ZLOAD 6.0-j20.0 12.0+j6.0 3.5-j11.5 16.5+j19.5 2.5-j5.5 13.0j13.0 3.0+j0.0 12.0+j9.0 4.0+j3.0 +12.0j5.0 VDD=28V, IDQ=500 mA, POUT W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current

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UF2840G

RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
• N-channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than competitive devices

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

Drain-Source Current

Power Dissipation

Junction Temperature

Storage Temperature

TSTG
-55 to 150

Thermal Resistance
°C/W

TYPICAL DEVICE IMPEDANCES

F MHz

ZLOAD
6.0-j20.0
12.0+j6.0
3.5-j11.5
16.5+j19.5
2.5-j5.5
13.0j13.0
3.0+j0.0
12.0+j9.0
4.0+j3.0
+12.0j5.0

VDD=28V, IDQ=500 mA, POUT W

ZIN is the series equivalent input impedance of the device from gate to source.

ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol Min Max

Drain-Source Breakdown Voltage

BVDSS

Drain-Source Leakage Current

IDSS

Gate-Source Leakage Current

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Datasheet ID: UF2840G 646919